BSV64_02 [SEME-LAB]
SILICON NPN PLANAR TRANSISTOR; 硅NPN平面晶体管
| 型号： | BSV64_02 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON NPN PLANAR TRANSISTOR |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSV64
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
SILICON NPN
7.75 (0.305)
8.51 (0.335)
PLANAR TRANSISTOR
6.10 (0.240)
6.60 (0.260)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
5.08 (0.200)
typ.
• V
• V
= 100V
= 60V
CBO
CEO
2.54
(0.100)
2
1
3
• I = 2A
C
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
Underside View
TO39 PACKAGE (TO-205AD)
DESCRIPTION
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
General Purpose NPN Transistor in a
Hermetic TO39 Package
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
V
V
V
Collector – Base Voltage (open emitter)
100V
80V
CBO
CER
CEO
EBO
Collector – Emitter Voltage (R ≤ 50Ω)
BE
Collector – Emitter Voltage (open base)
Emitter – Base Voltage (open collector)
Collector Current (d.c.)
60V
5V
I
I
I
2A
C
Collector Current (peak value)
Base Current (d.c.)
5A
CM
B
1A
P
P
Total Device Dissipation @ Tamb = 25°C
Total Device Dissipation @ TCase = 50°C
Storage Temperature
0.87W
5W
TOT
TOT
stg,
j
T
T
–65 to 200°C
175°C
25°C / W
172°C / W
Junction Temperature
Rθ
Rθ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
j-c
j-a
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3086
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BSV64
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V
V
Collector – Emitter Saturation Voltage I = 5A
I = 0.5A
1
CEsat
BEsat
CBO
C
B
V
Emitter – Base Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
I = 5A
I = 0.5A
1.8
C
B
I
I
V
V
V
= 60V
= 4V
= 2V
I = 0
10
µA
10
CB
EB
CE
E
I = 0
EBO
C
h
c
I = 5A
25
70
—
FE
C
Collector Capacitance at f = 1MHz
Transition Frequency at f = 20MHz
Turn on Time
I = I = 0
V
V
=10V
80
pF
c
E
e
CB
CE
f
I = 0.5A
=5V
= 0.5A
100
MHz
T
C
ton
toff
I
= 5A; I
= -I
0.6
1.2
Con
Bon
Boff
µs
Turn off time
-V
= 2V
BEoff
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3086
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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