D1023 [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D1023 |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D1023UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
C
D
(2 pls)
E
B
1
2
3
60W – 28V – 175MHz
SINGLE ENDED
A
G
5
4
H
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
F
M
K
J
N
DT
• LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
GATE
SOURCE (COMMON)
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
6.35 DIA
3.17 DIA
18.41
5.46
Tol.
Inches
Tol.
0.13 0.250 DIA 0.005
0.13 0.125 DIA 0.005
• HIGH GAIN – 16 dB MINIMUM
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
5.21
F
7.62
APPLICATIONS
G
H
I
21.59
3.94
12.70
0.13
• HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
J
K
M
N
24.76
2.59
4.06
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
117W
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
70V
±20V
DSS
GSS
I
15A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.3/00
D1023UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Drain–Source
BV
V
= 0
I = 100mA
70
V
DSS
GS
D
Breakdown Voltage
Zero Gate Voltage
I
V
V
= 28V
= 20V
V
= 0
3
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Drain Efficiency
V
V
= 0
= V
1
7
A
V
GSS
GS
DS
DS
V
g
I = 10mA
1
2.4
16
GS(th)
D
GS
V
P
V
= 10V
I = 3A
S
fs
DS
D
G
= 60W
= 28V
dB
%
PS
O
I
= 0.3A
DQ
50
DS
VSWR Load Mismatch Tolerance
f = 175MHz
= 28V
20:1
—
pF
pF
pF
C
C
C
Input Capacitance
V
V
V
V
V
V
= –5V f = 1MHz
180
90
iss
DS
GS
GS
GS
Output Capacitance
= 28V
= 28V
= 0
= 0
f = 1MHz
f = 1MHz
oss
rss
DS
DS
Reverse Transfer Capacitance
7.5
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 1.5°C / W
THj–case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.3/00
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