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元器件品牌
D2013
[SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
元器件型号：
D2013
生产厂家：
SEME LAB
描述和应用：
METAL GATE RF SILICON FET
金属闸极射频硅场效应管
射频
PDF文件：
总4页 (文件大小：62K)
下载文档：
下载PDF数据表文档文件
型号参数：D2013参数
查看货源
D2013UK
METAL GATE RF SILICON FET
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48
SEME-LAB
D2014UK
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 500MHz SINGLE ENDED
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40
SEME-LAB
D2015L
Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200V to 1000V
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85
LITTELFUSE
D2015L
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN
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0
LITTELFUSE
D2015L51
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
TECCOR
D2015L51V
暂无描述
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0
TECCOR
D2015L52
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
LITTELFUSE
D2015L52
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB
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0
TECCOR
D2015L53
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
TECCOR
D2015L55V
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB
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0
TECCOR
D2015L56
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
LITTELFUSE
D2015L58
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
LITTELFUSE
D2015L59
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
LITTELFUSE
D2015L65
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
LITTELFUSE
D2015L68
Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,
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0
TECCOR
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