D2218UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D2218UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D2218UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
C
2
B
A
20W – 12.5V – 1GHz
SINGLE ENDED
3
D
(
2
p
l
s
)
E
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
1
G
H
F
DP
• LOW C
rss
PIN 1
PIN 3
SOURCE
GATE
PIN 2
DRAIN
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
mm
Tol.
Inches
0.650
0.250
45°
Tol.
16.51
6.35
45°
0.25
0.13
5°
0.010
0.005
5°
B
• HIGH GAIN – 10 dB MINIMUM
C
D
E
F
G
H
1.52
6.35
0.13
3.56
0.64
0.13
0.13
0.03
0.51
0.13
0.060
0.250
0.005
0.140
0.024
0.005
0.005
0.001
0.020
0.005
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
70W
40V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
16A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
9/99
D2218UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Drain–Source
BV
V
= 0
I = 10mA
40
V
DSS
GS
D
Breakdown Voltage
Zero Gate Voltage
I
V
V
= 12.5V
= 20V
V
= 0
8
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
V
V
= 0
= V
8
7
A
V
GSS
GS
DS
V
g
I = 10mA
0.5
1.44
10
GS(th)
D
DS
GS
V
P
V
= 10V
I = 0.8A
S
fs
DS
D
G
= 20W
O
dB
%
PS
= 12.5V
I
= 1.6A
DQ
40
DS
VSWR Load Mismatch Tolerance
f = 1GHz
= 0
20:1
—
pF
pF
pF
C
C
C
Input Capacitance
V
V
V
V
= –5V f = 1MHz
96
80
8
iss
DS
DS
DS
GS
GS
GS
Output Capacitance
= 12.5V V
= 12.5V V
= 0
= 0
f = 1MHz
f = 1MHz
oss
rss
Reverse Transfer Capacitance
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 2.5°C / W
THj–case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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