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D2253UK [SEME-LAB]

METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
D2253UK
型号： D2253UK
厂家： SEME LAB    SEME LAB
描述：

METAL GATE RF SILICON FET
金属闸极射频硅场效应管

晶体 晶体管 射频 CD 放大器
文件： 总2页 (文件大小：24K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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TetraFET  
D2253UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
C
D
B
8
7
1
E
2
R
A
3
6
F
5
4
Q
O
5W – 12.5V – 1GHz  
PUSH–PULL  
N
M
J
K
L
I
P
FEATURES  
H
G
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
DBC4 Package  
PIN 1 Source (Common) PIN 5 Source (Common)  
PIN 2 Drain 1  
PIN 3 Drain 2  
PIN 6 Gate 2  
PIN 7 Gate 1  
• VERY LOW C  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 4 Source (Common) PIN 8 Source (Common)  
DIM  
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm  
6.47  
0.76  
45°  
Tol.  
0.08  
0.08  
5°  
Inches  
.255  
.030  
45°  
Tol.  
.003  
.003  
5°  
• HIGH GAIN – 10 dB MINIMUM  
0.76  
1.14  
2.67  
11.73  
8.43  
7.92  
0.20  
0.64  
0.30  
3.25  
2.11  
6.35SQ  
1.65  
0.13  
0.25  
0.08  
0.08  
0.08  
0.13  
0.08  
0.08  
0.02  
0.02  
0.02  
0.08  
0.08  
0.08  
0.51  
max  
0.07  
.030  
.045  
.105  
.462  
.332  
.312  
.008  
.025  
.012  
.128  
.083  
.250SQ  
.065  
.005  
0.010  
.003  
.003  
.003  
.005  
.003  
.003  
.001  
.001  
.001  
.003  
.003  
.003  
.020  
max  
.003  
APPLICATIONS  
• VHF/UHF COMMUNICATIONS  
from 1MHz to 1 GHz  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
15W  
40V  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
DSS  
GSS  
±20V  
I
2A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/00  
D2253UK  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
Test Conditions  
PER SIDE  
case  
Parameter  
Min.  
Typ.  
Max. Unit  
Drain–Source Breakdown  
BV  
V
= 0  
I = 10mA  
40  
V
DSS  
GS  
D
Voltage  
Zero Gate Voltage  
I
V
V
= 12.5V  
= 20V  
V
= 0  
1
mA  
DSS  
DS  
GS  
Drain Current  
I
Gate Leakage Current  
V
V
= 0  
= V  
1
7
A
V
GSS  
GS  
DS  
DS  
V
g
Gate Threshold Voltage*  
Forward Transconductance*  
I = 10mA  
1
GS(th)  
D
GS  
V
= 10V  
I = 0.2A  
0.18  
S
fs  
DS  
D
TOTAL DEVICE  
G
Common Source Power Gain  
Drain Efficiency  
P
= 5W  
10  
40  
dB  
%
PS  
O
V
= 12.5V  
I
= 0.2A  
DQ  
DS  
VSWR  
Load Mismatch Tolerance  
f = 1GHz  
20:1  
—
PER SIDE  
C
Input Capacitance  
Output Capacitance  
V
V
= 0  
V
= –5V f = 1MHz  
12  
10  
1
pF  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
C
= 12.5V V  
= 12.5V V  
= 0  
= 0  
f = 1MHz  
f = 1MHz  
oss  
C
Reverse Transfer Capacitance V  
rss  
* Pulse Test:  
Pulse Duration = 300 s , Duty Cycle 2%  
THERMAL DATA  
R
Thermal Resistance Junction – Case  
Max. 12.0°C / W  
THj–case  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/00  

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