DMD5010 [SEME-LAB]
ROHS COMPLIANT METAL GATE RF SILICON FET; 符合ROHS指令的金属闸极射频硅场效应管
| 型号： | DMD5010 |
| 厂家： | 
SEME LAB |
| 描述： | ROHS COMPLIANT METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
DMD5010
DMD5010-A
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
G
(typ)
C
2 pls)
(
2
5
3
4
1
P
2 p
(
l
s
)
H
D
A
125W – 50V – 400MHz
PUSH–PULL
E
(
4 pls)
F
I
FEATURES
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
N
M
O
J
K
D1
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
PIN 2
PIN 4
DRAIN 1
GATE 2
DRAIN 2
GATE 1
DIM Millimetres Tol.
Inches
0.600
0.425
45°
Tol.
A
B
C
D
E
F
G
H
I
15.24
10.80
45°
9.78
8.38
27.94
1.52R
10.16
21.84
0.10
1.96
1.02
4.45
34.04
1.63R
0.50
0.13
5°
0.020
0.005
5°
• LOW Crss
• HIGH GAIN – 13 dB MINIMUM
0.13
0.13
0.13
0.13
0.15
0.23
0.02
0.13
0.13
0.38
0.13
0.13
0.385
0.330
1.100
0.060R
0.400
0.860
0.004
0.077
0.040
0.175
1.340
0.064R
0.005
0.005
0.005
0.005
0.006
0.009
0.001
0.005
0.005
0.015
0.005
0.005
APPLICATIONS
J
• VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
K
M
N
O
P
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
648W (389W -A Version)
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage*
Drain Current*
125V
±20V
DSS
GSS
I
12A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 7347
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 1
DMD5010
DMD5010-A
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source Breakdown
BV
V
= 0
I = 100mA
125
V
DSS
GS
D
Voltage
Zero Gate Voltage
I
V
V
= 50V
= 20V
V
= 0
4
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
V
V
= 0
= V
1
7
μA
V
GSS
GS
DS
DS
V
g
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
I = 10mA
1
GS(th)
D
GS
GS
V
= 10V
I = 2A
3.2
mhos
fs
DS
D
V
I = 10mA
V = V
DS
0.1
V
GS(th)match
D
Matching Between Sides
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 125W
13
60
dB
%
PS
O
η
= 50V
I
= 1.4A
DQ
DS
VSWR
Load Mismatch Tolerance
f = 400MHz
20:1
—
PER SIDE
C
Input Capacitance
Output Capacitance
V
V
= 50V
= 50V
= 50V
V
V
V
= –5V f = 1MHz
240
100
6
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
C
= 0
= 0
f = 1MHz
f = 1MHz
oss
C
Reverse Transfer Capacitance V
rss
* Pulse Test:
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 0.27°C / W
0.45 °C / W -A Version
THj–case
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 7347
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 1
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