IRFF230 [SEME-LAB]
N-CHANNEL ENHANCEMENT; N沟道增强
| 型号： | IRFF230 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFF230
2N6798
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
• V
= 200V
(BR)DSS
5.08 (0.200)
typ.
• I = 5.5A
D
2.54
(0.100)
2
Ω
= 0.40
• R
DSON
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
45°
TO–39 PACKAGE (TO-205AF)
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain–Source Voltage
200V
20V
DS
GS
V
Gate–Source Voltage
I
I
Drain Current Continuous T
= 25°C
5.5A
3.5A
22A
D
Case
T
= 100°C
Case
Drain Current Pulsed
DM
P
Total Device Dissipation @ T
T
= 25°C
25W
10W
D
Case
= 100°C
Case
T , T
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
–55 to +150°C
J
STG
R
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.6mm from Case for
10 secs.
5.0°C/W
175°C/W
θJC
θJA
L
T
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3096
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 3
IRFF230
2N6798
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Test Conditions
Min.
200
2.0
Typ.
Max. Unit
V
V
I
Drain–Source Breakdown Voltage
Gate Thresshold Voltage
Gate–Body Leakage
V
V
V
V
V
V
V
= 0
I = 1mA
(BR)DSS
GS
DS
DS
DS
GS
GS
DS
D
V
=V
I = 250μA
4.0
GS(th)
GS
D
= 0
V
= 20V
100
25
nA
μA
Ω
GSS
DSS
GS
(BR)DSS
=0.8 x V
= 0
I
Zero Gate Voltage Drain Current
T = 125°C
j
250
1
r
Drain–Source On–Resistance
= 10V
= 15V
I = 3.5A
0.25
3.0
600
250
80
0.4
DS(on)
D
Ω
1
gf
C
Forward Transconductance
I = 3.5A
s( )
2.5
D
s
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
RiseTime
iss
V
= 25V
V
= 0
GS
DS
C
C
t
pF
ns
oss
rss
f = 1.0MH
Z
V
= 77V
RL = 22Ω
= 10V
8
30
50
50
40
don
DD
t
t
t
I = 3.5A
V
GEN
42
r
D
Turn off Delay Time
FallTime
R = 7.5 ohms
G
12
d(of)
f
30
SOURCE DRAIN DIODE RATING CHARACTERISTICS
1
V
I
Diode Forward Voltage
I = 5.5A
V
= 0
V
A
1.4
5.5
22
SD
F
GS
Continues Current
S
2
I
t
Pulsed Current
SM
rr
Reverse Recovery Time
I = 5.5A
V
= 50V
ns
150
500
6
F
DD
Q
Reverse Recovered Charge
dI /DT = 100A/μS
F
μC
rr
1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3096
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 3
相关型号：
IRFF310
1.25A, 400V, 4.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
ROCHESTER
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