IRFY9130C [SEME-LAB]
P-Channel MOSFET in a Hermetically sealed; P沟道MOSFET在一个密封
| 型号： | IRFY9130C |
| 厂家： | 
SEME LAB |
| 描述： | P-Channel MOSFET in a Hermetically sealed |
| 文件： | 总1页 (文件大小：15K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFY9130C
Dimensions in mm (inches).
P-Channel MOSFET in
10.6 (0.42)
4.6 (0.18)
0.8
a Hermetically sealed
(0.03)
TO257AB Metal Package.
3.70Dia. Nom
1
2
3
VDSS = 100V
ID = 11.2A
RDS(ON) = 0.3Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
1.0
(0.039)
2.54 (0.1)
BSC
2.70
(0.106)
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
Parameter
Min.
Typ.
Max.
100
11.2
75
Units
V
VDSS
ID
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
A
PD
W
RDS(ON)
CISS
Qg
Static Drain – Source On–State Resistance
Input Capacitance
0.3
Ω
800
pF
nC
ns
ns
ns
ns
Total Gate Charge
30
60
ttd(on)
ttr
ttd(off)
tf
Turn–On Delay Time
Rise Time
140
140
140
Turn–Off Delay Time
Fall Time
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Generated
13-Sep-02
相关型号：
IRFY9130CMPBF
Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
INFINEON
IRFY9130CMSCV
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV
INFINEON
IRFY9130CMSCX
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
INFINEON
IRFY9130CSCS
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
IRFY9130CSCX
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
INFINEON
IRFY9130MEAPBF
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
IRFY9130MEB
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
IRFY9130MEDPBF
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
©2020 ICPDF网 联系我们和版权申明