SML100C4 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML100C4 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML100C4
TO–254 Package Outline.
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
3.53 (0.139)
3.78 (0.149)
1.02 (0.040)
1.27 (0.050)
Dia.
POWER MOSFETS
1
2
3
VDSS
1000V
3.6A
ID(cont)
RDS(on) 4.00
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
• Faster Switching
• Lower Leakage
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• TO–254 Hermetic Package
D
G
S
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
1000
3.6
V
A
V
DSS
Continuous Drain Current
I
I
D
1
Pulsed Drain Current
14.4
DM
Gate – Source Voltage
Total Power Dissipation @ T
Derate Linearly
±30
V
W
V
GS
= 25°C
125
case
P
D
1.0
W/°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
-55 to +150
300
T , T
J
STG
°C
T
L
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
1.00
°C/W
50
JC
JA
Junction to Ambient
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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SML100C4
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
V
V
V
V
V
V
V
V
= 0V , I = 250µA
1000
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
D
Zero Gate Voltage Drain Current
= V
250
DSS
µA
DSS
(V = 0V)
= 0.8V
, T = 125°C
1000
GS
DSS
C
I
Gate – Source Leakage Current
= ±30V , V = 0V
±100 nA
GSS
DS
V
Gate Threshold Voltage
= V , I = 1.0mA
2
4
V
GS(TH)
GS
D
> I
x R
Max
D(ON)
DS(ON)
2
I
On State Drain Current
3.6
A
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
4.00
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
C
Drain to Case Capacitance
Input Capacitance
f = 1MHz
15
805
115
37
22
950
160
60
55
7
pF
DC
V
V
= 0V
iss
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
= 25V
pF
oss
rss
f = 1MHz
Q
Q
Q
V
V
= 10V
35
g
GS
DD
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
4.3
18
nC
ns
gs
DSS
I = I [Cont.] @ 25°C
27
20
24
50
32
gd
D
D
t
t
t
t
V
= 10V
10
d(on)
r
GS
DD
V
= 0.5 V
12
DSS
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
33
d(off)
f
D
D
R = 1.8
16
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
I
I
Continuous Source Current (Body Diode)
1
3.6
A
S
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
14.4
SM
2
V
V
= 0V , I = – I [Cont.]
1.3
580
3.3
V
SD
GS
S
D
t
Reverse Recovery Time
Reverse Recovery Charge
I = – I [Cont.] , dl / dt = 100A/µs
290
ns
µC
rr
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/µs
1.65
rr
S
D
s
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
SOA1
SOA2
Safe Operating Area
V
= 0.4V
, I = P / 0.4V , t = 1 Sec.
125
DS
DSS DS
D
DSS
W
Safe Operating Area
I
DS
= I [Cont.] , V = P / I [Cont.] , t = 1 Sec. 125
D
DS
D
D
I
Inductive Current Clamped
3.6
A
LM
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
6/99
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