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SML30L76 [SEME-LAB]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
SML30L76
型号： SML30L76
厂家： SEME LAB    SEME LAB
描述：

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET

高压 高电压电源
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SML30L76  
TO–264AA Package Outline.  
Dimensions in mm (inches)  
1.80 (0.071)  
2.01 (0.079)  
N–CHANNEL  
4.60 (0.181)  
5.21 (0.205)  
19.51 (0.768)  
26.49 (0.807)  
3.10 (0.122)  
3.48 (0.137)  
ENHANCEMENT MODE  
HIGH VOLTAGE  
POWER MOSFETS  
VDSS  
300V  
76A  
1
2
3
2.29 (0.090)  
2.69 (0.106)  
ID(cont)  
2.79 (0.110)  
3.18 (0.125)  
RDS(on) 0.040  
0.48 (0.019)  
0.84 (0.033)  
0.76 (0.030)  
1.30 (0.051)  
• Faster Switching  
• Lower Leakage  
2.59 (0.102)  
3.00 (0.118)  
5.45 (0.215) BSC  
2 plcs.  
• 100% Avalanche Tested  
• Popular TO–264 Package  
Pin 1 – Gate  
Pin 2 – Drain  
Pin 3 – Source  
D
StarMOS is a new generation of high voltage  
N–Channel enhancement mode power MOSFETs.  
This new technology minimises the JFET effect,  
increases packing density and reduces the  
G
on-resistance. StarMOS also achieves faster  
switching speeds through optimised gate layout.  
S
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
Drain – Source Voltage  
300  
76  
V
A
A
V
DSS  
Continuous Drain Current  
I
I
D
1
Pulsed Drain Current  
304  
DM  
Gate – Source Voltage  
±30  
V
V
GS  
V
Gate – Source Voltage Transient  
±40  
GSM  
Total Power Dissipation @ T  
Derate Linearly  
= 25°C  
520  
W
case  
P
D
4.16  
–55 to 150  
300  
W/°C  
Operating and Storage Junction Temperature Range  
Lead Temperature : 0.063” from Case for 10 Sec.  
T , T  
J
STG  
°C  
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)  
76  
I
AR  
1
Repetitive Avalanche Energy  
50  
E
E
AR  
AS  
mJ  
2
Single Pulse Avalanche Energy  
2500  
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Starting T = 25°C, L = 870µH, R = 25 , Peak I = 76A  
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
6/99  
SML30L76  
STATIC ELECTRICAL RATINGS (T  
= 25°C unless otherwise stated)  
case  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
BV  
I
Drain – Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
V
V
V
V
V
V
V
V
= 0V , I = 250 A  
D
300  
V
DSS  
GS  
DS  
DS  
GS  
DS  
DS  
GS  
GS  
= V  
25  
DSS  
A
DSS  
(V  
= 0V)  
= 0.8V  
, T = 125°C  
250  
GS  
DSS  
C
I
Gate – Source Leakage Current  
Gate Threshold Voltage  
= ±30V , V  
= 0V  
±100 nA  
GSS  
DS  
V
= V  
> I  
, I = 2.5mA  
D
2
4
V
GS(TH)  
GS  
x R  
Max  
D(ON)  
DS(ON)  
2
I
On State Drain Current  
76  
A
D(ON)  
= 10V  
= 10V , I = 0.5 I [Cont.]  
2
R
Drain – Source On State Resistance  
0.040  
DS(ON)  
D
D
DYNAMIC CHARACTERISTICS  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
C
C
C
Input Capacitance  
V
V
= 0V  
8500  
iss  
GS  
DS  
Output Capacitance  
= 25V  
1500  
390  
285  
56  
pF  
nC  
oss  
rss  
Reverse Transfer Capacitance  
f = 1MHz  
3
Q
Q
Q
t
Total Gate Charge  
V
V
= 10V  
g
GS  
Gate – Source Charge  
Gate – Drain (“Miller”) Charge  
Turn–on Delay Time  
Rise Time  
= 0.5 V  
DSS  
gs  
gd  
DD  
I = I [Cont.] @ 25°C  
120  
16  
D
D
V
= 15V  
d(on)  
GS  
DD  
t
t
t
V
= 0.5 V  
20  
r
DSS  
ns  
Turn-off Delay Time  
Fall Time  
I = I [Cont.] @ 25°C  
48  
d(off)  
f
D
D
R
= 0.6  
4
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
I
I
Continuous Source Current (Body Diode)  
1
76  
A
S
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
304  
SM  
2
V
t
V
= 0V , I = – I [Cont.]  
1.3  
V
ns  
C
SD  
GS  
S
D
Reverse Recovery Time  
Reverse Recovery Charge  
I = – I [Cont.] , dl / dt = 100A/ s  
530  
rr  
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/ s  
11.5  
rr  
S
D
s
THERMAL CHARACTERISTICS  
Characteristic  
Min. Typ. Max. Unit  
R
R
Junction to Case  
0.24  
°C/W  
40  
JC  
JA  
Junction to Ambient  
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%  
3) See MIL–STD–750 Method 3471  
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
6/99  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

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