ZVP2106B [SEME-LAB]
P CHANNEL ENHANCEMENT MODE DMOS FET; P沟道增强型场效应管的DMOS
| 型号： | ZVP2106B |
| 厂家： | 
SEME LAB |
| 描述： | P CHANNEL ENHANCEMENT MODE DMOS FET |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZVP2106B
MECHANICAL DATA
Dimensions in mm (inches)
P CHANNEL ENHANCEMENT
MODE DMOS FET
BV
I
- 60V
0.76A
Ω
0.5
8.89 (0.35)
9.40 (0.37)
DSS
7.75 (0.305)
8.51 (0.335)
(cont)
D
R
(on)
DS
4.19 (0.165)
4.95 (0.195)
0.89
(0.035)
max.
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
FEATURES
5.08 (0.200)
typ.
• FAST SWITCHING SPEEDS
• NO SECONDARY BREAKDOWN
• EXCELLENT TEMPERATURE STABILITY
• HIGH INPUT IMPEDANCE
2.54
2
(0.100)
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
• LOW CURRENT DRIVE
TO39
• EASE OF PARALLELING
Pin 1 – Source
Pin 2 – Gate
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
V
Gate – Source Voltage
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
±20
-60V
GS
V
DS
I
I
I
(V = 10V , T
= 25°C)
0.28A
-0.76A
-4A
D
GS
case
case
(V = 10V , T
= 100°C)
D
GS
DM
P
P
Power Dissipation @ T = 25°C
0.7W
D
A
Power Dissipation @ T = 25°C
5W
D
C
T , T
Operating and Storage Temperature Range
–55 to 150°C
J
stg
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
11/99
ZVP2106B
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
BV
Drain – Source Breakdown Voltage
V
V
= 0
I = - 1mA
- 60
V
DSS
GS
D
Static Drain – Source On–State
R
= -10V
I = 500mA
5
Ω
DS(on)
GS
D
1
Resistance
V
Gate Threshold Voltage
V
V
V
= V
I = - 1mA
- 1.5
150
- 3.5
V
GS(th)
DS
DS
GS
GS
D
1,2
g
Forward Transconductance
= -18V
I = 500mA
mS
fs
D
= 0
V
= 0.8V
- 0.5
DS
DSS
I
I
Zero Gate Voltage Drain Current
µA
DSS
T = 125°C
- 100
1
On-state drain current
V
= - 18V
V
GS
= –10V
- 1
A
D(on)
DS
C
C
C
Input Capacitance2
Output Capacitance 2
Reverse Transfer Capacitance 2
V
V
= 0
100
60
20
7
iss
oss
rss
d(on)
r
GS
= -18V
pF
ns
DS
f = 1MHz
2,3
t
t
t
t
Turn–On Delay Time
2,3
Rise Time
15
12
15
V
= -18V
I = -500mA
D
DD
2,3
Turn–Off Delay Time
d(off)
f
2,3
Fall Time
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) Sample
3) Switching times measured with 50Ω source inpedance and < 5ns rise time on a pulse generator.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
11/99
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