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2N2060 [SEMICOA]

Silicon NPN Transistor; 硅NPN晶体管
2N2060
型号： 2N2060
厂家： SEMICOA SEMICONDUCTOR    SEMICOA SEMICONDUCTOR
描述：

Silicon NPN Transistor
硅NPN晶体管

晶体 晶体管 放大器
文件： 总3页 (文件大小：211K)
中文：  中文翻译
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2N2060  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
• Matched, Dual Transistors  
• Low power  
Semicoa Semiconductors offers:  
• NPN silicon transistor  
• Screening and processing per MIL-PRF-19500 Appendix E  
• JAN level (2N2060J)  
• JANTX level (2N2060JX)  
• JANTXV level (2N2060JV)  
• QCI to the applicable level  
• 100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV  
• Radiation testing (total dose) upon request  
Features  
• Hermetically sealed TO-77 metal can  
• Also available in chip configuration  
• Chip geometry 0410  
• Reference document:  
MIL-PRF-19500/270  
Benefits  
• Qualification Levels: JAN, JANTX, and  
JANTXV  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
• Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, Continuous  
Symbol  
Rating  
60  
100  
7
500  
Unit  
Volts  
Volts  
Volts  
mA  
VCEO  
VCBO  
VEBO  
IC  
mW  
540 one section  
600 both sections  
3.08 one section  
3.48 both sections  
Power Dissipation, TA = 25°C  
Derate linearly above 25°C  
Power Dissipation, TC = 25°C  
Derate linearly above 25°C  
mW  
PT  
PT  
mW/°C  
mW/°C  
W
1.5 one section  
2.12 both sections  
8.6 one section  
W
mW/°C  
mW/°C  
12.1 both sections  
Operating Junction Temperature  
Storage Temperature  
TJ  
-65 to +200  
°C  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. G  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 1  
www.SEMICOA.com  
2N2060  
Silicon NPN Transistor  
Data Sheet  
ELECTRICAL CHARACTERISTICS  
characteristics specified at TA = 25°C  
Off Characteristics  
Parameter  
Collector-Emitter Breakdown Voltage  
Symbol  
V(BR)CEO IC = 30 mA  
Test Conditions  
Min  
60  
Typ  
Max  
Units  
Volts  
Volts  
Collector-Emitter Breakdown Voltage  
V(BR)CER  
80  
IC = 10 mA, RBE = 10 Ω  
VCB = 100 Volts  
ICBO1  
ICBO2  
ICBO3  
ICEO  
ICEX  
ICES  
10  
2
µA  
nA  
µA  
µA  
VCB = 80 Volts  
Collector-Base Cutoff Current  
10  
VCB = 80 Volts, TA = 150°C  
VCE = xx Volts  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current  
µA  
VCE = xx Volts, VEB = x Volts  
nA  
VCE = xx Volts  
VEB = 7 Volts  
IEBO1  
10  
2
µA  
Emitter-Base Cutoff Current  
IEBO2  
V
EB = 5 Volts  
nA  
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%  
On Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
IC = 10 µA, VCE = 5 Volts  
IC = 100 µA, VCE = 5 Volts  
IC = 1 mA, VCE = 5 Volts  
IC = 10 mA, VCE = 5 Volts  
IC = 100 µA, VCE = 5 Volts  
TA = -55°C  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
25  
30  
40  
50  
10  
75  
90  
120  
150  
DC Current Gain  
|VBE1 - VBE2 1  
|
V
V
CE = 5 Volts, IC = 100 µA  
Base-Emitter Voltage Differential  
5
mVolts  
mVolts  
|VBE1 - VBE2 2  
|
CE = 5 Volts, IC = 1 mA  
VCE = 5 Volts, IC = 100 µA  
TA = 25°C and -55°C  
|VBE1 - VBE2 1  
|
.8  
1
Base-Emitter Voltage Differential  
change with temperature  
V
CE = 5 Volts, IC = 1 mA  
|VBE1 - VBE2 2  
|
TA = 25°C and +125°C  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. G  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 2 of 2  
www.SEMICOA.com  
2N2060  
Silicon NPN Transistor  
Data Sheet  
Dynamic Characteristics  
Parameter  
Magnitude – Common Emitter, Short  
Circuit Forward Current Transfer Ratio  
Small Signal Short Circuit Forward  
Current Transfer Ratio  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
V
CE = 10 Volts, IC = 50 mA,  
|hFE|  
3
25  
f = 20 MHz  
V
CE = 5 Volts, IC = 1 mA,  
f = 1 kHz  
CB = 10 Volts, IE = 0 mA,  
100 kHZ < f < 1 MHz  
hFE  
50  
150  
15  
V
pF  
pF  
Open Circuit Output Capacitance  
COBO  
CIBO  
V
EB = 0.5 Volts, IC = 0 mA,  
Open Circuit Input Capacitance  
85  
100 kHZ < f < 1 MHz  
VCE = 10 Volts, IC = 300 µA,  
f = 1 kHz, Rg = 510 Ω  
NF1  
NF2  
8
8
Noise Figure  
dB  
VCE = 10 Volts, IC = 300 µA,  
f = 10 kHz, Rg = 1 kΩ  
Short Circuit Input Impedance  
Short Circuit Input Impedance  
Open Circuit Output Admittance  
hib  
hie  
hoe  
VCB = 5V, IC = 1mA, f = 1kHz  
VCB = 5V, IC = 1mA, f = 1kHz  
VCB = 5V, IC = 1mA, f = 1kHz  
20  
1
30  
4
16  
Ω
kΩ  
µmhos  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. G  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 3 of 3  
www.SEMICOA.com  

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