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元器件品牌
2N5582
[SEMICOA]
Chip Type 2C2222A Geometry 0400 Polarity NPN; 芯片型号2C2222A几何0400极性NPN
元器件型号：
2N5582
生产厂家：
SEMICOA SEMICONDUCTOR
描述和应用：
Chip Type 2C2222A Geometry 0400 Polarity NPN
芯片型号2C2222A几何0400极性NPN
晶体 晶体管
PDF文件：
总1页 (文件大小：32K)
下载文档：
下载PDF数据表文档文件
型号参数：2N5582参数
查看货源
2N5582_02
Silicon NPN Transistor
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10
SEMICOA
2N5583
PNP
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105
ETC
2N5583
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.
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25
SEME-LAB
2N5583
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.
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75
SEME-LAB
2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
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43
NJSEMI
2N5583LP
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-39
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35
ETC
2N5584
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 30A I(C) | TO-210AE
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26
ETC
2N5584
Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
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156
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0
MICROSEMI
2N5584E3
Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
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0
MICROSEMI
2N5584E3
Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
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0
MICROSEMI
2N5587
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 80A I(C) | TO-114
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19
ETC
2N5588
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 80A I(C) | TO-114
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15
ETC
2N5588E3
Power Bipolar Transistor, 80A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, TO-114, 3 PIN
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156
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0
MICROSEMI
2N5589
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 600MA I(C) | STX-8
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17
ETC
2N5589
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS
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MICROSEMI
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