HFD5N60S [SEMIHOW]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | HFD5N60S |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Sep 2009
BVDSS = 600 V
DS(on) typ = 2.0 Ω
R
HFD5N60S / HFU5N60S
600V N-Channel MOSFET
ID = 4.3 A
D-PAK
I-PAK
2
FEATURES
1
1
3
2
3
Originative New Design
HFD5N60S
HFU5N60S
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
4.3
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
2.5
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
17.2
±30
210
4.3
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25℃) *
9.1
mJ
V/ns
4.5
2.5
91
W
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
0.73
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
1.37
Junction-to-Ambient*
Junction-to-Ambient
50
℃/W
110
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Sep 2009
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.5
--
4.5
2.5
V
RDS(ON) Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 2.15 A
2.0
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
DS = 600 V, VGS = 0 V
600
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
0.6
V/℃
/ΔTJ
Coefficient
IDSS
V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
520
60
680
80
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
8.0
10.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
11
45
33
90
㎱
㎱
VDS = 300 V, ID = 4.5 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
40
88
㎱
(Note 4,5)
48
100
13.5
--
㎱
Qg
Qgs
Qgd
10.5
2.5
4.0
nC
nC
nC
VDS = 480V, ID = 4.5 A,
VGS = 10 V
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
4.3
17.2
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 4.3 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 4.5 A, VGS = 0 V
300
2.2
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=18.9mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤4.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Sep 2009
Typical Characteristics
101
100
150oC
25oC
-55oC
*
Note
1. VDS = 50V
2. 250µs Pulse Test
-1
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
101
VGS = 10V
100
150oC
25oC
VGS = 20V
*
Note :
1. VGS = 0V
Note : TJ = 25oC
8
2. 250µs Pulse Test
*
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
10
VSD , Source-Drain Voltage [V]
ID , Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
1000
800
600
400
200
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 120V
VDS = 300V
C
C
iss
VDS = 480V
6
Coss
4
*
Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 4.5A
0
-1
0
2
4
6
8
10
12
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009
Typical Characteristics (continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
*
Note :
1. VGS = 0 V
0.9
0.8
*
Note :
1. VGS = 10 V
2. ID = 250 µA
2. ID = 2.15 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100 ms
DC
100
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
-1
10
-1
100
101
102
103
25
50
75
100
125
150
10
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
* Notes :
1. ZθJC(t) = 1.37 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.2
0.1
-1
10
0.05
0.02
0.01
PDM
single pulse
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Sep 2009
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,Sep 2009
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Sep 2009
Package Dimension
TO-252
±0.2
6.6
±0.1
2.3
±0.15
5.35
±0.05
0.5
±0.3
1.2
+0.1
-0.05
0.05
±0.2
±0.2
0.8
+0.1
-0.05
0.5
0.6
2.3typ
2.3typ
◎ SEMIHOW REV.A0,Sep 2009
Package Dimension
TO-251
±0.2
±0.1
6.6
2.3
±0.15
±0.05
5.35
0.5
±0.15
±0.15
0.75
0.8
+0.1
-0.05
0.5
±0.1
0.6
2.3typ
2.3typ
±0.3
1.2
◎ SEMIHOW REV.A0,Sep 2009
相关型号：
HFD6140-001
Photodiode Detector, 1200nm Min, 1650nm Max, 1250Mbps, LC Connector, Through Hole Mount
HONEYWELL
HFD6140-202
Photodiode Detector, 1250nm Min, 1600nm Max, 1250Mbps, LC Connector, Panel Mount, CERAMIC PACKAGE-8
HONEYWELL
HFD6140-212
Photodiode Detector, 1250nm Min, 1600nm Max, 1250Mbps, LC Connector, Panel Mount, CERAMIC PACKAGE-8
HONEYWELL
HFD6180-001
Photodiode Detector, 800nm Min, 870nm Max, 1250Mbps, LC Connector, Through Hole Mount
HONEYWELL
HFD6340-001
Photodiode Detector, 1200nm Min, 1650nm Max, 1250Mbps, SC Connector, Through Hole Mount
HONEYWELL
HFD6340-202
Photodiode Detector, 1250nm Min, 1600nm Max, 1250Mbps, SC Connector, Panel Mount, CERAMIC PACKAGE-8
HONEYWELL
HFD6340-212
Photodiode Detector, 1250nm Min, 1600nm Max, 1250Mbps, SC Connector, Panel Mount, CERAMIC PACKAGE-8
HONEYWELL
HFD6380-001
Photodiode Detector, 800nm Min, 870nm Max, 1250Mbps, SC Connector, Through Hole Mount
HONEYWELL
HFD6380-202
Photodiode Detector, 800nm Min, 870nm Max, 1250Mbps, SC Connector, Panel Mount, CERAMIC PACKAGE-8
HONEYWELL
©2020 ICPDF网 联系我们和版权申明