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HFI50N06 [SEMIHOW]

60V N-Channel MOSFET; 60V N沟道MOSFET
HFI50N06
型号： HFI50N06
厂家： SEMIHOW CO.,LTD.    SEMIHOW CO.,LTD.
描述：

60V N-Channel MOSFET
60V N沟道MOSFET
文件： 总8页 (文件大小：642K)
中文：  中文翻译
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Nov 2009  
BVDSS = 60 V  
RDS(on) = 18 mΩ  
HFW50N06 / HFI50N06  
60V N-Channel MOSFET  
ID = 50 A  
D2-PAK I2-PAK  
FEATURES  
Originative New Design  
HFW50N06  
HFI50N06  
Superior Avalanche Rugged Technology  
Robust Gate Oxide Technology  
Very Low Intrinsic Capacitances  
Excellent Switching Characteristics  
Unrivalled Gate Charge : 40 nC (Typ.)  
Extended Safe Operating Area  
Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V  
100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
Drain Current  
60  
50  
ID  
– Continuous (TC = 25℃)  
– Continuous (TC = 100℃)  
A
Drain Current  
35.4  
200  
±25  
490  
50  
A
IDM  
Drain Current  
– Pulsed  
(Note 1)  
A
VGS  
EAS  
IAR  
Gate-Source Voltage  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25℃)*  
12  
mJ  
V/ns  
7.0  
3.75  
120  
W
W
Power Dissipation (TC = 25℃)  
- Derate above 25℃  
0.8  
W/℃  
℃
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
℃
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
Rθ JA  
Junction-to-Case  
--  
--  
--  
1.24  
Junction-to-Ambient*  
Junction-to-Ambient  
40  
℃/W  
62.5  
RθJA  
* When mounted on the minimum pad size recommended (PCB Mount)  
◎ SEMIHOW REV.A0,Mar 2009  
Electrical Characteristics TC=25 °C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max Units  
On Characteristics  
VGS  
--  
Gate Threshold Voltage  
V
DS = VGS, ID = 250 ㎂  
2.0  
--  
4.0  
V
RDS(ON) Static Drain-Source  
On-Resistance  
VGS = 10 V, ID = 25 A  
0.018 0.022  
Ω
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage  
V
GS = 0 V, ID = 250 ㎂  
60  
--  
--  
--  
--  
V
ΔBVDSS Breakdown Voltage Temperature  
ID = 250 ㎂, Referenced to25℃  
0.06  
V/℃  
/ΔTJ  
Coefficient  
IDSS  
V
DS = 60 V, VGS = 0 V  
--  
--  
--  
--  
1
㎂
㎂
Zero Gate Voltage Drain Current  
VDS = 48 V, TC = 150℃  
10  
IGSSF  
IGSSR  
Gate-Body Leakage Current,  
Forward  
VGS = 25 V, VDS = 0 V  
VGS = -25 V, VDS = 0 V  
--  
--  
--  
--  
100  
㎁
㎁
Gate-Body Leakage Current,  
Reverse  
-100  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
--  
--  
--  
1600 2100  
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
600  
90  
780  
120  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Time  
--  
--  
--  
--  
--  
--  
--  
15  
105  
60  
40  
220  
130  
140  
52  
㎱
㎱
VDS = 30 V, ID = 25 A,  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
RG = 25 Ω  
㎱
(Note 4,5)  
65  
㎱
Qg  
Qgs  
Qgd  
40  
nC  
nC  
nC  
VDS = 48 V, ID = 50 A,  
VGS = 10 V  
10  
--  
(Note 4,5)  
17  
--  
Source-Drain Diode Maximum Ratings and Characteristics  
IS  
Continuous Source-Drain Diode Forward Current  
Pulsed Source-Drain Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
50  
200  
1.5  
--  
A
ISM  
VSD  
trr  
Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V  
--  
V
Reverse Recovery Time  
Reverse Recovery Charge  
52  
75  
㎱
μC  
IS = 50 A, VGS = 0 V  
diF/dt = 100 A/μs (Note 4)  
--  
Qrr  
Notes ;  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L=230μH, IAS=50A, VDD=25V, RG=25Ω, Starting TJ =25°C  
3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C  
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%  
5. Essentially Independent of Operating Temperature  
◎ SEMIHOW REV.A0,Mar 2009  
Typical Characteristics  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 1. On Region Characteristics  
Figure 2. Transfer Characteristics  
ID, Drain Current [A]  
VSD, Source-Drain Voltage [V]  
Figure 4. Body Diode Forward Voltage  
Variation with Source Current  
and Temperature  
Figure 3. On Resistance Variation vs  
Drain Current and Gate Voltage  
3000  
2500  
2000  
1500  
1000  
500  
12  
10  
8
C
iss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
rss = Cgd  
VDS = 30V  
VDS = 48V  
C
C
iss  
Coss  
6
※ Note ;  
1. VGS = 0 V  
2. f = 1 MHz  
4
C
rss  
2
※ Note : ID = 50 A  
0
10  
0
-1  
100  
101  
0
10  
20  
30  
40  
50  
QG, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
◎ SEMIHOW REV.A0,Mar 2009  
Typical Characteristics (continued)  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.2  
1.1  
1.0  
* Note :  
1. VGS = 0 V  
0.9  
∗ Note :  
1. VGS = 10 V  
2. ID = 250 µA  
2. ID = 25 A  
0.8  
-100  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 8. On-Resistance Variation  
vs Temperature  
Figure 7. Breakdown Voltage Variation  
vs Temperature  
103  
102  
101  
100  
60  
50  
40  
30  
20  
10  
0
Operation in This Area  
is Limited by R DS(on)  
100 µs  
1 ms  
10 ms  
DC  
* Notes :  
1. TC = 25 o  
C
2. TJ = 175 o  
C
3. Single Pulse  
100  
101  
102  
-1  
10  
25  
50  
75  
100  
125  
150  
175  
TC, Case Temperature [oc]  
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs Case Temperature  
100  
D=0.5  
* Notes :  
0.2  
0.1  
1. ZθJC(t) = 1.24 oC/W Max.  
2. Duty Factor, D=t1/t2  
3. TJM - TC = PDM * ZθJC(t)  
-1  
10  
0.05  
PDM  
0.02  
0.01  
single pulse  
t1  
t2  
-2  
10  
-5  
10  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
100  
101  
t1, Square Wave Pulse Duration [sec]  
Figure 11. Transient Thermal Response Curve  
◎ SEMIHOW REV.A0,Mar 2009  
Fig 12. Gate Charge Test Circuit & Waveform  
VGS  
Same Type  
50KΩ  
as DUT  
Qg  
12V  
200nF  
10V  
300nF  
VDS  
VGS  
Qgs  
Qgd  
DUT  
3mA  
Charge  
Fig 13. Resistive Switching Test Circuit & Waveforms  
RL  
VDS  
90%  
VDS  
VDD  
( 0.5 rated VDS  
)
RG  
10%  
Vin  
DUT  
10V  
td(on)  
tr  
td(off)  
tf  
ton  
toff  
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms  
BVDSS  
--------------------  
BVDSS -- VDD  
L
1
2
2
----  
EAS  
=
LL IAS  
VDS  
VDD  
BVDSS  
IAS  
ID  
RG  
ID (t)  
VDD  
VDS (t)  
DUT  
10V  
t p  
Time  
◎ SEMIHOW REV.A0,Mar 2009  
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms  
DUT  
+
VDS  
_
IS  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• IS controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
IS  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
Vf  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
◎ SEMIHOW REV.A0,Mar 2009  
Package Dimension  
◎ SEMIHOW REV.A0,Mar 2009  
Package Dimension  
◎ SEMIHOW REV.A0,Mar 2009  

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