HFW75N75 [SEMIHOW]
75V N-Channel MOSFET; 75V N沟道MOSFET
| 型号： | HFW75N75 |
| 厂家： | 
SEMIHOW CO.,LTD. |
| 描述： | 75V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：864K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Mar 2007
BVDSS = 75 V
DS(on) typ=10.5 mΩ
R
HFW75N75
75V N-Channel MOSFET
ID = 80 A
D2-PAK
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 77 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
75
80
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
56
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
320
±20
1476
80
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25℃) *
16
mJ
V/ns
7.0
3.75
160
W
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
0.91
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
0.94
Junction-to-Ambient*
Junction-to-Ambient
40
℃/W
62.5
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,Mar 2007
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.0
--
4.0
V
RDS(ON) Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 40 A
0.0105 0.012
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
DS = 75 V, VGS = 0 V
75
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
0.06
V/℃
/ΔTJ
Coefficient
IDSS
V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 60 V, TC = 150℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
4340 5640
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
834
55
1080
72
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
30
193
130
136
77
60
380
260
270
100
--
㎱
㎱
VDS = 37.5 V, ID = 80 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
Qgs
Qgd
nC
nC
nC
VDS = 60 V, ID = 80 A,
VGS = 10 V
22
(Note 4,5)
19
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
80
320
1.5
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 80 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 80 A, VGS = 0 V
68
160
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=307.5uH, IAS=80A, VDD=25V, RG=25Ω, Starting TJ =25°C
3. ISD≤80A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Mar 2007
Typical Characteristics
102
101
100
150oC
25oC
-55oC
* Note
1. VDS = 40V
2. 250µs Pulse Test
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.014
0.013
0.012
0.011
0.010
0.009
0.008
102
101
100
VGS = 10V
150oC
25oC
VGS = 20V
* Note :
1. VGS = 0V
* Note : TJ = 25oC
2. 250µs Pulse Test
0
25
50
75
100
125
150
175
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
8000
6000
4000
2000
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
V
DS = 15V
C
VDS = 37.5V
VDS =60V
Coss
*
Note ;
1. VGS = 0 V
C
6
iss
2. f = 1 MHz
C
4
rss
2
* Note : ID = 80.0 A
80
0
-1
10
100
101
0
20
40
60
100
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Mar 2007
Typical Characteristics (continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
* Note :
1. VGS = 0 V
0.9
0.8
* Note :
1. VGS = 10 V
2. ID = 250 µA
2. ID = 40.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
103
102
101
100
80
60
40
20
0
100 µs
1 ms
10 ms
DC
Operation in This Area
is Limited by R DS(on)
∗ Notes :
-1
10
1. TC = 25 o
C
2. TJ = 175 o
C
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
-1
0.1
0.05
* Notes :
10
1. ZθJC(t) = 0.94 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
single pulse
-2
10
PDM
t1
t2
100
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Mar 2007
Fig 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
RG
10%
Vin
DUT
10V
td(on)
tr
td(off)
tf
ton
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS -- VDD
L
1
2
2
----
EAS
=
LL IAS
VDS
VDD
BVDSS
IAS
ID
RG
ID (t)
VDD
VDS (t)
DUT
10V
t p
Time
◎ SEMIHOW REV.A0,Mar 2007
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
IS
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Mar 2007
Package Dimension
◎ SEMIHOW REV.A0,Mar 2007
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