TIP107 [SEMIHOW]

Monolithic Construction With Built In Base-Emitter Shunt Resistors; 整体结构与内置的基射极分流电阻


型号：	TIP107
厂家：	SEMIHOW CO.,LTD.
描述：	Monolithic Construction With Built In Base-Emitter Shunt Resistors 整体结构与内置的基射极分流电阻晶体晶体管局域网
文件：	总5页 (文件大小：743K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIP105/106/107

◎ SEMIHOW REV.A0,Oct 2007

TIP105/106/107

Monolithic Construction With Built In

Base-Emitter Shunt Resistors

- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)

- Collector-Emitter Sustaining Voltage

- Low Collector-Emitter Saturation Voltage

- Industrial Use

PNP Epitaxial

Silicon Darlington

Transistor

- Complementary to TIP100/101/102

Equivalent Circuit

Absolute Maximum Ratings T_a=25℃ unless otherwise noted

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage : TIP105

V_CBO

-60

-80

-100

: TIP106

: TIP107

Collector-Emitter Voltage : TIP105

V_CEO

-60

-80

-100

: TIP106

: TIP107

TO-220

1. Base

2. Collector

3. Emitter

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

V_EBO

I_C

I_CP

I_B

-5

-8

-15

-1

Collector Dissipation(Ta=25℃)

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

P_C

T_J

150

-65~150

℃

T_STG

Electrical Characteristics T_a=25℃ unless otherwise noted

CHARACTERISTICS

SYMBOL

Test Condition

Min

Max

Unit

Collector-Emitter Sustaining Voltage

V_CEO(SUS)

: TIP105

: TIP106

: TIP107

-60

-80

-100

I_C=30mA, I_B=0

Collector Cut-off Current

: TIP105

I_CEO

V_CE= -30V,I_B=0

-50

㎂

: TIP106

: TIP107

_CE= -40V,I_B=0

_CE= -50V,I_B=0

Collector Cut-off Current

: TIP105

I_CBO

V_CE= -60V,I_E=0

-50

㎂

: TIP106

: TIP107

_CE= -80V,I_E=0

_CE= -100V,I_E=0

Emitter Cut-off Current

DC Current Gain

I_EBO

h_FE

V_EB= -5V,I_C=0

-2

㎃

V_CE= -4V,I_C= -3A

1000

200

20000

_CE= -4V,I_C= -8A

Collector-Emitter Saturation Voltage

V_CE(sat)

I_C= -3A,I_B= -6mA

I_C= -8A,I_B= -80mA

-2

-2.5

Base-Emitter ON Voltage

V_BE(on)

C_ob

V_CE= -4V,I_C= -8A

-2.8

300

V_CB= -10V,I_E=0, f=0.1MHz

Output Capacitance

㎊

* Pulse Test: PW≤300us, Duty Cycle≤2%

◎ SEMIHOW REV.A0,Oct 2007

Typical Characteristics

◎ SEMIHOW REV.A0,Oct 2007

Package Dimension

TO-220 (A)

±0.20

9.90

4.50

±0.

3.6

±0.20

1.30

±0.20

2.40

±0.20

1.27

±0.20

1.52

±0.20

0.80

2.54typ

±0.20

0.50

Dimensions in Millimeters

◎ SEMIHOW REV.A0,Oct 2007

Package Dimension

TO-220 (B)

±0.20

4.57

±0.20

3.8

1.27

±0.20

2.67

±0.20

1.27

±0.20

0.81

2.54typ

±0.20

0.40

Dimensions in Millimeters

◎ SEMIHOW REV.A0,Oct 2007

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