302GDL061-458CTVU [SEMIKRON]
Insulated Gate Bipolar Transistor,;型号: | 302GDL061-458CTVU |
厂家: | SEMIKRON INTERNATIONAL |
描述: | Insulated Gate Bipolar Transistor, 栅 |
文件: | 总2页 (文件大小:29K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SKiiP 3-phase bridge
SKiiPPACK
Absolute Maximum Ratings
SK integrated intelligent
Power PACK
3-phase bridge with
brake chopper
Symbol Conditions 1)
Values
2500
Units
V
4)
Visol
AC, 1min
Top ,Tstg
Operating / stor. temperature
-25...+85
°C
IGBT and Inverse Diode
VCES
SKiiP
302 GDL 061 - 458 CTV 7,9)
600
400
300
V
V
A
°C
A
5)
VCC
IC
Tj
Operating DC link voltage
IGBT
IGBT + Diode
Diode
Preliminary Data
Case S5
3)
-40...+150
300
IF
IFM
IFSM
Diode, tp < 1 ms
Diode, Tj = 150 °C, 10ms; sin
600
3000
45
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms
Driver
kAs2
VS1
VS2
fsmax
dV/dt
Stabilized Power Supply
Non-stabilized Power Supply
Switching frequency
18
30
20
75
V
V
kHz
kV/µs
Primary to secondary side
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
Features
IGBT11)
V(BR)CES
• Short circuit protection, due to
evaluation of current sensor
signals
Driver without supply
V
mA
mA
≥VCES
−
−
4,5
−
0,4
−
0,94
6,4
2,9
ICES
VGE = 0,
CE = VCES
Tj = 25 °C
Tj = 125 °C
−
−
−
−
−
−
−
V
• Isolated power supply
• Low thermal impedance
• Optimal thermal management
with integrated heatsink
• Pressure contact technology
with increased power cycling
capability, compact design
• Low stray inductance
• High power, small losses
• Over-temperature protection
VTO
rT
VCesat
VCesat
Tj = 125 °C
Tj = 125 °C
IC = 300A,
IC = 300A,
V
−
−
−
−
−
mΩ
V
V
Tj = 125 °C
Tj = 25 °C
2,65
27/38
Eon + Eoff VCC=300/400V,IC=300A
Tj = 125 °C
mJ
CCHC
LCE
per SkiiP, AC side
Top, Bottom
0,8
15
nF
nH
−
−
−
−
Inverse Diode 2)
1)
Theatsink = 25 °C, unless
VF = VEC IF= 300A;
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
1,72
1,75
9
0,78
3,3
V
V
mJ
V
−
−
−
−
−
−
−
−
−
−
otherwise specified
CAL = Controlled Axial Lifetime
VF= VEC
IF= 300A
2)
Eon + Eoff IF= 300A;
Technology (soft and fast)
without driver
Driver input to DC link /
3)
VTO
rT
Tj = 125 °C
Tj = 125 °C
4)
mΩ
AC output to DC link / AC
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
options available for driver:
Thermal Characteristics
10)
Rthjs
Rthjs
Rthsa
per IGBT
per Diode
P16 heatsink; see case S5
0,150
0,250
36
K/W
K/W
K/KW
−
−
−
−
−
−
5)
10)
6,10)
6)
Driver
IS1
IS2
7)
Supply current 15V-supply
Supply current 24V-supply
Interlock-time
340+360*fs /fsmax+3,5*IAC/A
250+240*fs /fsmax+2,6*IAC/A
2,3
mA
mA
µs
9)
tinterlock-driver
SKiiPPACK protection
U - DC link voltage sense
F – Fiber optic connector
“s” referenced to temperature
ITRIPSC
ITRIPLG
TTRIP
Short circuit protection
375
87
115
410
A
A
°C
V
10)
Ground fault protection
Over-temp. protection
UDC-protection
sensor
11)
9)
NPT-technology with homo-
genous current-distribution
UDCTRIP
Mechanical Data
M1
M2
DC terminals, SI Units
AC terminals, SI Units
4
8
6
10
Nm
Nm
−
−
11.01.99
by SEMIKRON
SKiiP Brake-chopper
SKiiPPACK
Absolute Maximum Ratings
SK integrated intelligent
Power PACK
3-phase bridge with
brake chopper
Symbol Conditions 1)
Values
2500
Units
V
4)
Visol
AC, 1min
Top ,Tstg
Operating / stor. temperature
-25...+85
°C
IGBT and Inverse Diode
VCES
SKiiP
302 GDL 061 - 458 CTV 7,9)
600
400
300
V
V
A
°C
A
5)
VCC
IC
Tj
Operating DC link voltage
IGBT
IGBT + Diode
Diode
Preliminary Data
Case S5
3)
-40...+150
300
IF
IFM
IFSM
Diode, tp < 1 ms
Diode, Tj = 150 °C, 10ms; sin
600
4000
80
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms
Driver
kAs2
VS1
VS2
fsmax
dV/dt
Stabilized Power Supply
Non-stabilized Power Supply
Switching frequency
18
30
5
V
V
kHz
kV/µs
Primary to secondary side
50
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
Features
IGBT11)
V(BR)CES
• Short circuit protection, due to
evaluation of current sensor
signals
Driver without supply
V
mA
mA
≥VCES
−
−
6
−
0,4
−
0,94
4,2
2,2
ICES
VGE = 0,
CE = VCES
Tj = 25 °C
Tj = 125 °C
−
−
−
−
−
−
−
V
• Isolated power supply
• Low thermal impedance
• Optimal thermal management
with integrated heatsink
• Pressure contact technology
with increased power cycling
capability, compact design
• Low stray inductance
• High power, small losses
• Over-temperature protection
VTO
rT
VCesat
VCesat
Tj = 125 °C
Tj = 125 °C
IC = 300A,
IC = 300A,
V
−
−
−
−
−
mΩ
V
V
Tj = 125 °C
Tj = 25 °C
2,60
27/38
Eon + Eoff VCC=300/400V,IC=300A
Tj = 125 °C
mJ
CCHC
LCE
per SkiiP, AC side
Top, Bottom
0,8
15
nF
nH
−
−
−
−
Inverse Diode 2)
1)
Theatsink = 25 °C, unless
VF = VEC IF= 300A;
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
1,68
1,75
9
0,78
2,5
V
V
mJ
V
−
−
−
−
−
−
−
−
−
−
otherwise specified
CAL = Controlled Axial Lifetime
VF= VEC
IF= 300A
2)
Eon + Eoff IF= 300A;
Technology (soft and fast)
without driver
Driver input to DC link /
3)
VTO
rT
Tj = 125 °C
Tj = 125 °C
4)
mΩ
AC output to DC link / AC
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
options available for driver:
Thermal Characteristics
10)
Rthjs
Rthjs
Rthsa
per IGBT
per Diode
P16 heatsink; see case S5
0,100
0,188
36
K/W
K/W
K/KW
−
−
−
−
−
−
5)
10)
6,10)
6)
Driver
IS1
IS2
7)
Supply current 15V-supply
Supply current 24V-supply
Interlock-time
67+10*fs /fsmax+0*IAC/A
67+10*fs /fsmax+0*IAC/A
-
mA
mA
µs
9)
tinterlock-driver
SKiiPPACK protection
U - DC link voltage sense
F – Fiber optic connector
“s” referenced to temperature
ITRIPSC
ITRIPLG
TTRIP
Short circuit protection
Vcesat-protection
A
A
°C
V
10)
Ground fault protection
Over-temp. protection
UDC-protection
-
sensor
115
410
11)
9)
NPT-technology with homo-
genous current-distribution
UDCTRIP
Mechanical Data
M1
M2
DC terminals, SI Units
AC terminals, SI Units
4
8
6
10
Nm
Nm
−
−
by SEMIKRON
11.01.99
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