EMIX653GAL176HDS [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | EMIX653GAL176HDS |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX653GAL176HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1700
619
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 150 °C
438
ICnom
450
ICRM
ICRM = 2xICnom
900
VGES
-20 ... 20
SEMiX® 3s
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-55 ... 150
Trench IGBT Modules
SEMiX653GAL176HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
545
365
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
450
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
2900
A
• Homogeneous Si
-40 ... 150
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
545
365
A
A
Tj = 150 °C
• UL recognised file no. E63532
IFnom
450
A
Typical Applications*
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
• AC inverter drives
• UPS
• Electronic welders
2900
A
-40 ... 150
°C
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 450 A
VCE(sat)
Tj = 25 °C
2
2.45
2.9
V
V
V
GE = 15 V
Tj = 125 °C
2.45
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
2.8
4.0
6.4
3
V
V
0.9
2.2
3.4
5.8
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 18 mA
Tj = 25 °C
5.2
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1700 V
V
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
39.6
1.65
1.31
4200
1.67
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 1 – 24.06.2010
1
SEMiX653GAL176HDs
Characteristics
Symbol Conditions
min.
typ.
290
90
max.
Unit
ns
VCC = 1200 V
td(on)
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
IC = 450 A
tr
ns
Eon
300
975
190
mJ
ns
RG on = 3.6 Ω
td(off)
tf
R
G off = 3.6 Ω
ns
Tj = 125 °C
Eoff
180
mJ
Rth(j-c)
per IGBT
0.054
K/W
SEMiX® 3s
Inverse diode
IF = 450 A
GE = 0 V
chip
Tj = 25 °C
VF = VEC
1.7
1.7
1.90
1.9
V
V
V
Tj = 125 °C
Trench IGBT Modules
SEMiX653GAL176HDs
Features
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
0.9
0.7
1.3
1.8
1.1
0.9
1.3
1.8
380
130
1.3
1.1
1.3
1.8
V
V
mΩ
mΩ
A
IF = 450 A
di/dtoff = 4200 A/µs
IRRM
Qrr
µC
• Homogeneous Si
V
V
GE = -15 V
CC = 1200 V
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Tj = 125 °C
Err
73
mJ
Rth(j-c)
per diode
0.11
K/W
Freewheeling diode
• UL recognised file no. E63532
IF = 450 A
VF = VEC
Tj = 25 °C
1.7
1.7
1.9
1.9
V
V
Typical Applications*
V
GE = 0 V
Tj = 125 °C
chip
• AC inverter drives
• UPS
• Electronic welders
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
0.9
0.7
1.3
1.8
1.1
0.9
1.3
1.8
380
130
1.3
1.1
1.3
1.8
V
V
mΩ
mΩ
A
IF = 450 A
di/dtoff = 4200 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 1200 V
Tj = 125 °C
Err
73
mJ
Rth(j-c)
per diode
0.11
K/W
Module
LCE
20
0.7
1
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
Rth(c-s)
Ms
per module
0.04
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
300
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GAL176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 1 – 24.06.2010
3
SEMiX653GAL176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GAL176HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 1 – 24.06.2010
5
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