IPT030N12N3 G
IPT030N12N3 G在额外的击穿电压裕度和低导通电阻 (RDS(on)) 之间达到了出色平衡,是电池供电设备的理想选择。英飞凌 OptiMOS™ 功率 MOSFET 120V 技术 符合 TO-Leadless 封装要求, 针对大电流应用进行了优化。TOLL 封装是高功率密度应用的理想解决方案,与 D2PAK 7 引脚相比,封装尺寸减小了30%,且封装电感更低。
电池
0
INFINEON
SN74LXC2T45DTTR
2-bit dual supply transceiver with configurable voltage-level shifting and 3-state outputs | DTT | 8 | -40 to 125
暂无信息
1
TI
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
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AGILENT
GRAYHILL
ADI
Carling Technologies
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