KBPC1000WM [SEMIKRON]

Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon;
KBPC1000WM
型号: KBPC1000WM
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon

IOT 二极管
文件: 总2页 (文件大小:93K)
中文:  中文翻译
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KBPC 1000 F … KBPC 1016 F  
KBPC 1000 W … KBPC 1016 W  
Silicon-Bridge Rectifiers  
Silizium-Brückengleichrichter  
Nominal current  
10 A  
Type “FM”/”FP”  
Nennstrom  
Alternating input voltage  
Eingangswechselspannung  
35…1000 V  
Metal case (Index “M”) or  
Plastic case with alu-bottom (Index “P”)  
Metallgehäuse (Index “M”) oder  
Kunststoffgeh. mit Alu-Boden (Index “P”)  
Type “WM”/”WP”  
Dimensions  
28.6 x 28.6 x 7.3 [mm]  
Abmessungen  
Weight approx.  
Gewicht ca.  
23 g  
Compound has classification UL94V-0  
Vergußmasse UL94V-0 klassifiziert  
Standard packaging bulk  
Standard Lieferform lose im Karton  
Dimensions / Maße in mm  
Recognized Product – Underwriters Laboratories Inc.® File E175067  
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067  
Maximum ratings  
Grenzwerte  
Rep. peak reverse voltage Surge peak reverse voltage  
Type  
Typ  
Alternating input volt.  
Eingangswechselspg.  
Period. Spitzensperrspg.  
Stoßspitzensperrspannung  
V
VRMS [V]  
VRRM [V] 1)  
VRSM [V] 1)  
KBPC 1000 F/W  
KBPC 1001 F/W  
KBPC 1002 F/W  
KBPC 1004 F/W  
KBPC 1006 F/W  
KBPC 1008 F/W  
KBPC 1010 F/W  
KBPC 1012 F/W  
KBPC 1014 F/W  
KBPC 1016 F/W  
35  
50  
100  
80  
130  
70  
140  
280  
420  
560  
700  
800  
900  
1000  
200  
250  
400  
450  
600  
700  
800  
1000  
1200  
1300  
1400  
1600  
1000  
1200  
1400  
1600  
1
)
Valid for one branch – Gültig für einen Brückenzweig  
348  
221101  
© by SEMIKRON  
KBPC 1000 F … KBPC 1016 F  
KBPC 1000 W … KBPC 1016 W  
Repetitive peak fwd. current – Period. Spitzenstrom  
f > 15 Hz  
IFRM  
IFSM  
60 A 1)  
200 A  
Peak forward surge current, 60 Hz half sine-wave  
Stoßstrom für eine 60 Hz Sinus-Halbwelle  
TA = 25LC  
Rating for fusing – Grenzlastintegral, t < 10 ms  
TA = 25LC  
i2t  
Tj  
166 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
– 50…+150LC  
TS – 50…+150LC  
Characteristics  
Kennwerte  
Max. current with cooling fin 300 cm2  
Dauergrenzstrom mit Kühlblech 300 cm2  
TA = 50LC  
R-load  
C-load  
IFAV  
IFAV  
10.0 A  
8.0 A  
Forward voltage – Durchlaßspannung  
Leakage current – Sperrstrom  
Tj = 25LC  
Tj = 25LC  
IF = 5 A  
VF  
IR  
< 1.2 V 2)  
< 25 WA  
> 2500 V  
VR = VRRM  
Isolation voltage terminals to case  
VISO  
Isolationsspannung Anschlüsse zum Gehäuse  
Thermal resistance junction to case  
RthC  
< 3.0 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
10-32 UNF  
M 5  
18 ± 10% lb.in.  
2 ± 10% Nm  
1
)
)
Valid, if the temperature of the case is kept to 120LC – Gültig, wenn die Gehäusetemperatur auf 120LC gehalten wird  
Valid for one branch – Gültig für einen Brückenzweig  
2
© by SEMIKRON  
221101  
349  

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