SB1520 [SEMIKRON]
Schottky barrier rectifier diodes; 肖特基势垒整流二极管
| 型号： | SB1520 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Schottky barrier rectifier diodes |
| 文件： | 总3页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB 1520 ... SB 15100
Type
Repetitive Surge peak
Max.
Max.
Max.
peak
reverse
voltage
reverse
recovery
time
forward
voltage
forward
voltage
reverse
voltage
1)
2)
3)
VRRM
V
VRSM
V
trr
VF
VF
ns
V
V
SB 1520
SB 1530
SB 1540
SB 1545
SB 1550
SB 1560
SB 1590
SB 15100
20
30
40
45
50
60
90
100
20
30
40
45
50
60
90
100
-
-
-
-
-
-
-
-
0,43
0,43
0,43
0,43
0,6
0,6
0,74
0,74
0,52
0,52
0,52
0,52
-
-
-
-
Axial Lead Diode
Schottky barrier rectifier
diodes
Forward Current: 15 A
Absolute Maximum Ratings
Symbol Conditions
Ta = 25 °C, unless otherwise specified
Reverse Voltage: 20 to 100 V
SB 1520 ... SB 15100
Values
Unit
R-load, 4), Ta = 50 °C
f > 15 Hz, 4)
IFAV
IFRM
IFSM
15
60
A
A
Features
tp = 10 ms
320
A
half sinus-wave
Ta = 25 °C
• Max. solder temperature: 260°C
• Plastic material has UL
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
A
i2t
512
A²s
A²s
°C
°C
°C
classification 94V-0
Ta = 25 °C
• Electrostatic discharge immunity
test IEC 1000-4-2 (C=150 pF, R=150
Ohm): voltage class 20 kV
Tj
Tj
Tstg
Operating junction temperature
DC forward (bypass) mode 5)
Storage temperature
-50 ... +150
-50 ... +200
-50 ... +175
Typical Applications*
• Designed as Bypass Diodes for Solar
Panels, protection application
Characteristics
Mechanical Data
• Plastic case: 8 x 7,5 [mm]
• Weight approx.: 1,5 g
Symbol Conditions
Ta = 25 °C, unless otherwise specified
min.
typ.
max.
Unit
• Terminals: plated terminals solderable
per MIL-STD-750
IR
IR
Tj = 25 °C, VR = VRRM
Tj = 100 °C, VR = VRRM
500
25
µA
mA
• Mounting position: any
at 1 MHz and applied reverse voltage
of 4 V
• Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Cj
-
-
pF
L = 60 mH, Tj = 25 °C, inductive load
ERSM
mJ
switched off
Footnotes
4)
Rthja
RthjL
-
3
K/W
K/W
1) IF = - A, IR = - A, IRR = - A
6)
2) IF = 5 A, Tj = 25 °C
3) IF = 15 A, Tj = 25 °C
4) Valid, if leads are kept at TA at a distance
of 10 mm from case
5) Max. junction temperature Tj ≤200 °C in
bypass mode / DC forward mode
6) Thermal resistance from junction to lead/
terminal at distance 0 mm from case
Diode
© by SEMIKRON
Rev. 4 – 18.01.2011
1
SB 1520 ... SB 15100
Fig.1: Forward characteristics (typical value)
Fig.2: Rated forward current vs. ambient temperature 1)
Fig.3: Thermal resistance versus distance from case
2
Rev. 4 – 18.01.2011
© by SEMIKRON
SB 1520 ... SB 15100
Case: 8 x 7,5 [mm]
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 18.01.2011
3
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