SB1530S [SEMIKRON]

Schottky barrier rectifier diodes; 肖特基势垒整流二极管
SB1530S
型号: SB1530S
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Schottky barrier rectifier diodes
肖特基势垒整流二极管

整流二极管
文件: 总3页 (文件大小:161K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SB 1520S ... SB 15100S  
Type  
Repetitive Surge peak  
Max.  
Max.  
Max.  
peak  
reverse  
voltage  
reverse  
recovery  
time  
forward  
voltage  
forward  
voltage  
reverse  
voltage  
1)  
2)  
3)  
VRRM  
V
VRSM  
V
trr  
VF  
VF  
ns  
V
V
SB 1520S  
20  
30  
40  
45  
50  
60  
90  
20  
30  
40  
45  
50  
60  
90  
100  
-
-
-
-
-
-
-
-
0,43  
0,43  
0,43  
0,43  
0,6  
0,6  
0,74  
0,74  
0,52  
0,52  
0,52  
0,52  
-
-
-
-
SB 1530S  
SB 1540S  
SB 1545S  
SB 1550S  
SB 1560S  
SB 1590S  
Axial Lead Diode  
Schottky barrier rectifier  
diodes  
SB 15100S 100  
Forward Current: 15 A  
Absolute Maximum Ratings  
Symbol Conditions  
Ta = 25 °C, unless otherwise specified  
Reverse Voltage: 20 to 100 V  
SB 1520S ... SB 15100S  
Values  
Unit  
R-load, 4), Ta = 50 °C  
f > 15 Hz, 4)  
IFAV  
IFRM  
IFSM  
15  
60  
A
A
Features  
tp = 10 ms  
320  
A
half sinus-wave  
Ta = 25 °C  
Max. solder temperature: 260°C  
Plastic material has UL  
tp = 8.3 ms  
tp = 10 ms  
tp = 8.3 ms  
A
i2t  
512  
A²s  
A²s  
°C  
°C  
°C  
classification 94V-0  
Ta = 25 °C  
Electrostatic discharge immunity  
test IEC 1000-4-2 (C=150 pF, R=150  
Ohm): voltage class 20 kV  
Tj  
Tj  
Tstg  
Operating junction temperature  
DC forward (bypass) mode 5)  
Storage temperature  
-50 ... +150  
-50 ... +200  
-50 ... +175  
Typical Applications*  
• Designed as Bypass Diodes for Solar  
Panels, protection application  
Characteristics  
Mechanical Data  
Symbol Conditions  
Ta = 25 °C, unless otherwise specified  
min.  
typ.  
max.  
Unit  
• Plastic case: 5,4 x 7,5 [mm]  
• Weight approx.: 1,4 g  
• Terminals: plated terminals solderable  
per MIL-STD-750  
IR  
IR  
Tj = 25 °C, VR = VRRM  
Tj = 100 °C, VR = VRRM  
500  
25  
µA  
mA  
• Mounting position: any  
• Standard packaging: 1250 pieces per  
ammo  
at 1 MHz and applied reverse voltage  
of 4 V  
Cj  
-
-
pF  
L = 60 mH, Tj = 25 °C, inductive load  
ERSM  
mJ  
switched off  
Footnotes  
4)  
Rthja  
RthjL  
-
4
K/W  
K/W  
1) IF = - A, IR = - A, IRR = - A  
6)  
2) IF = 5 A, Tj = 25 °C  
3) IF = 15 A, Tj = 25 °C  
4) Valid, if leads are kept at TA at a distance  
of 10 mm from case  
5) Max. junction temperature Tj 200 °C in  
bypass mode / DC forward mode  
6) Thermal resistance from junction to lead/  
terminal at distance 0 mm from case  
Diode  
© by SEMIKRON  
Rev. 3 – 21.01.2011  
1
SB 1520S ... SB 15100S  
Fig.1: Forward characteristics (typical value)  
Fig.2: Rated forward current vs. ambient temperature 1)  
Fig.3: Thermal resistance versus distance from case  
2
Rev. 3 – 21.01.2011  
© by SEMIKRON  
SB 1520S ... SB 15100S  
Case: 5,4 x 7,5 [mm]  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.  
© by SEMIKRON  
Rev. 3 – 21.01.2011  
3

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