SEMIX202GB128DS [SEMIKRON]
SPT IGBT Modules; SPT IGBT模块
| 型号： | SEMIX202GB128DS |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SPT IGBT Modules |
| 文件： | 总4页 (文件大小：1233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 202GB128Ds
ꢌ
ꢍ (,-ꢗ. ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓ ꢊꢈꢅ ꢈ!ꢅꢑꢊꢎꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢑꢚꢈꢅ
Values
Units
IGBT
ꢖꢗꢘꢉ
/())
/3) ꢙ/4,ꢛ
())
ꢖ
$
0ꢗ
ꢌꢑ ꢍ (, ꢙ2)ꢛ -ꢗ
ꢏ! ꢍ / ꢃꢈ
0ꢗ56
ꢖ7ꢘꢉ
ꢌ"9. ꢙꢌꢈꢏꢄ
$
8 ()
ꢖ
ꢛ
ꢌ:ꢋꢘ5$ꢌ0:; < ꢌꢈꢏꢄ
$ꢗ. / ꢃꢊꢆ>
ꢐ =) >>> ? /,) ꢙ/(,ꢛ
-ꢗ
ꢖꢊꢈꢂꢔ
=)))
ꢖ
Inverse diode
®
SEMiX 2s
0@
ꢌꢑ ꢍ (, ꢙ2)ꢛ -ꢗ
/,) ꢙ/))ꢛ
())
$
$
0@56
ꢏ! ꢍ / ꢃꢈ
0@ꢉ6
ꢏ! ꢍ /) ꢃꢈA ꢈꢊꢆ>A ꢌ9 ꢍ (, -ꢗ
/)))
$
SPT IGBT Modules
ꢌ
ꢍ (,-ꢗ. ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓ ꢊꢈꢅ ꢈ!ꢅꢑꢊꢎꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢑꢚꢈꢅ
min.
typ.
max. Units
SEMiX 202GB128Ds
ꢖ7ꢘꢙꢏꢒꢛ
0ꢗꢘꢉ
ꢖꢗꢘꢙꢌ:ꢛ
ꢓꢗꢘ
ꢖ7ꢘ ꢍ ꢖꢗꢘ. 0ꢗ ꢍ = ꢃ$
=.,
,.,
B.,
).4
ꢖ
ꢃ$
ꢖ
ꢖ7ꢘ ꢍ ). ꢖꢗꢘ ꢍ ꢖꢗꢘꢉ. ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
/ ꢙ).3ꢛ
3 ꢙ/(ꢛ
/./, ꢙ/.),ꢛ
/( ꢙ/,ꢛ
Preliminary Data
ꢖ7ꢘ ꢍ /, ꢖ. ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
ꢃC
ꢖꢗꢘꢙꢈꢚꢏꢛ
0ꢗꢆꢂꢃ ꢍ /)) $. ꢖ7ꢘ ꢍ /, ꢖ.
ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ. ꢑꢒꢊ! ꢔꢅ"ꢅꢔ
/.3 ꢙ(./ꢛ (.4, ꢙ(.,,ꢛ
ꢖ
Features
ꢗꢊꢅꢈ
ꢗꢂꢅꢈ
ꢗꢓꢅꢈ
Dꢗꢘ
ꢇꢆ%ꢅꢓ ꢎꢂꢔꢔꢂ ꢊꢆꢄ ꢑꢂꢆ%ꢊꢏꢊꢂꢆꢈ
3
/.,
/
ꢆ@
ꢆ@
ꢆ@
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢉꢋꢌ ꢍ ꢉꢂꢎꢏꢐꢋꢇꢆꢑꢒꢐꢌꢒꢓꢂꢇꢄꢒ
ꢏꢅꢑꢒꢆꢂꢔꢂꢄꢕ
ꢀ
ꢀ
ꢖ7ꢘ ꢍ ). ꢖꢗꢘ ꢍ (, ꢖ. ꢎ ꢍ / 6ꢁ+
/2
ꢖ
ꢊꢏꢒ !ꢂꢈꢊꢏꢊ"ꢅ ꢏꢅꢃ!ꢅꢓꢚꢏꢇꢓꢅ
ꢀ
ꢀ
ꢗꢘꢙꢈꢚꢏꢛ
5ꢗꢗE?ꢘꢘE
ꢏꢅꢓꢃꢊꢆꢚꢔꢐꢑꢒꢊ!. ꢌꢑꢍ (, ꢙ/(,ꢛ -ꢗ
).F ꢙ/.),ꢛ
ꢃC
ꢑꢂꢅꢎꢎꢊꢑꢊꢅꢆꢏ
ꢁꢊꢄꢒ ꢈꢒꢂꢓꢏ ꢑꢊꢓꢑꢇꢊꢏ ꢑꢚ!ꢚ#ꢊꢔꢊꢏꢕ
ꢏ%ꢙꢂꢆꢛGꢏꢓ
ꢏ%ꢙꢂꢎꢎꢛGꢏꢎ
ꢖꢗꢗ ꢍ B)) ꢖ. 0ꢗꢆꢂꢃ ꢍ /)) $
ꢖ7ꢘ ꢍ 8 /, ꢖ
2, G ,)
ꢆꢈ
ꢆꢈ
=4) G ,,
Typical Applications
ꢘꢂꢆ ꢙꢘꢂꢎꢎ
ꢛ
57ꢂꢆ ꢍ 57ꢂꢎꢎ ꢍ B.2 C. ꢌ9 ꢍ /(, -ꢗ
// ꢙ2ꢛ
ꢃH
$ꢗ ꢊꢆ"ꢅꢓꢏꢅꢓ %ꢓꢊ"ꢅꢈ
&ꢋꢉ
ꢘꢔꢅꢑꢏꢓꢂꢆꢊꢑ 'ꢅꢔ%ꢅꢓꢈ ꢎ ꢇ! ꢏꢂ ()
*ꢁ+
ꢀ
ꢀ
ꢀ
Inverse diode
ꢖ@ ꢍ ꢖꢘꢗ
0@ꢆꢂꢃ ꢍ /)) $A ꢖ7ꢘ ꢍ ) ꢖA ꢌ9 ꢍ (, ꢙ/(,ꢛ
( ꢙ/.2ꢛ
(., ꢙ(.4ꢛ
ꢖ
-ꢗ. ꢑꢒꢊ! ꢔꢅ"ꢅꢔ
ꢈ
ꢖꢙꢌ:ꢛ
ꢓꢌ
ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
/./
3
/.(
/4
ꢖ
ꢃC
$
ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
0556
Iꢓꢓ
0@ꢆꢂꢃ ꢍ /)) $A ꢌ9 ꢍ (, ꢙ/(,ꢛ -ꢗ
%ꢊG%ꢏ ꢍ 4,,) $GJꢈ
ꢙ/4)ꢛ
ꢙ/Bꢛ
Jꢗ
ꢘꢓꢓ
ꢖ7ꢘ ꢍ ꢐ/, ꢖ
ꢙBꢛ
ꢃH
Thermal characteristics
5ꢏꢒꢙ9ꢐꢑꢛ
!ꢅꢓ 07Kꢌ
)./B,
).4
LG'
LG'
LG'
5ꢏꢒꢙ9ꢐꢑꢛM
5ꢏꢒꢙ9ꢐꢑꢛ@M
!ꢅꢓ 0ꢆ"ꢅꢓꢈꢅ Mꢊꢂ%ꢅ
!ꢅꢓ @'M
5ꢏꢒꢙꢑꢐꢈꢛ
!ꢅꢓ ꢃꢂ%ꢇꢔꢅ
).)=,
LG'
Temperature sensor
5(,
ꢌꢑ ꢍ (, -ꢗ
, 8,N
4=()
*O
L
K(,G2,
5(ꢍ5/ꢅP!QKꢙ/Gꢌ(ꢐ/Gꢌ/ꢛR A ꢌQLRAK
Mechanical data
6ꢈG6ꢏ
ꢏꢂ ꢒꢅꢚꢏꢈꢊꢆ* ꢙ6,ꢛ G ꢎꢂꢓ ꢏꢅꢓꢃꢊꢆꢚꢔꢈ ꢙ6Bꢛ
4G(.,
, G,
;ꢃ
ꢄ
(4B
GB
1
10-05-2006 CHD
© by SEMIKRON
SEMiX 202GB128Ds
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
10-05-2006 CHD
© by SEMIKRON
SEMiX 202GB128Ds
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward charact., incl. RCC´+EE
´
3
10-05-2006 CHD
© by SEMIKRON
SEMiX 202GB128Ds
Fig. 13 Typ. CAL diode recovered charge
7K
!ꢊꢆꢂꢇꢏ ꢉꢘ6ꢊS (ꢈ
ꢗꢚꢈꢅ ꢉꢘ6ꢊS (ꢈ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
10-05-2006 CHD
© by SEMIKRON
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