SEMIX305TMLI12E4B [SEMIKRON]
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES,;
| 型号： | SEMIX305TMLI12E4B |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, 栅 |
| 文件： | 总9页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX305TMLI12E4B
Absolute Maximum Ratings
Symbol Conditions
IGBT1
Values
Unit
Tj = 25 °C
VCES
IC
1200
479
369
300
900
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
-20 ... +20
SEMiX® 5
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤1200 V
tpsc
10
µs
°C
Tj
-40 ... 175
3-Level TNPC IGBT-Module
SEMiX305TMLI12E4B
Features
IGBT2
VCES
IC
Tj = 25 °C
650
360
271
300
900
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
-20 ... 20
ꢀ Solderless assembling solution with
PressFIT signal pins and screw power
terminals
VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 650 V
tpsc
Tj
10
µs
°C
-40 ... 175
ꢀ IGBT 4 Trench Gate Technology
ꢀ VCE(sat) with positive temperature
coefficient
Diode1
VRRM
IF
Tj = 25 °C
1200
363
272
300
900
V
A
A
A
A
ꢀ Low inductance case
Tc = 25 °C
Tc = 80 °C
ꢀ Reliable mechanical design with
injection moulded terminals and
reliable internal connections
ꢀ UL recognized file no. E63532
ꢀ NTC temperature sensor inside
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 25 °C
1485
-40 ... 175
A
°C
Remarks*
ꢀ Case temperature limited to TC=125°C
max.
Diode2
VRRM
IF
Tj = 25 °C
650
366
267
300
600
V
A
A
A
A
ꢀ Product reliability results are valid for
Tc = 25 °C
Tc = 80 °C
T
jop=150°C
Tj = 175 °C
ꢀ IGBT1: outer IGBTs T1 & T4
ꢀ IGBT2: inner IGBTs T2 & T3
ꢀ Diode1: outer diodes D1 & D4
ꢀ Diode2: inner diodes D2 & D3
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
2160
-40 ... 175
A
°C
Module
It(RMS)
Tstg
400
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
TMLI
© by SEMIKRON
Rev. 1.0 – 02.03.2016
1
SEMiX305TMLI12E4B
Characteristics
Symbol Conditions
IGBT1
min.
typ.
max.
Unit
IC = 300 A
Tj = 25 °C
VCE(sat)
1.80
2.20
2.05
2.40
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
3.3
5.0
5.8
0.90
0.80
3.8
5.3
6.5
4
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
SEMiX® 5
VGE = VCE, IC = 11.4 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
5
18.5
1.22
1.04
2265
2.5
232
128
4.5
3-Level TNPC IGBT-Module
SEMiX305TMLI12E4B
Features
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
- 15 V...+ 15 V
Tj = 25 °C
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
mJ
ns
ns
I
C = 300 A
V
GE = +15/-15 V
ꢀ Solderless assembling solution with
PressFIT signal pins and screw power
terminals
Eon
td(off)
tf
R
R
G on = 2 Ω
G off = 2 Ω
422
121
di/dton = 4400 A/µs
di/dtoff = 3000 A/µs
ꢀ IGBT 4 Trench Gate Technology
ꢀ VCE(sat) with positive temperature
coefficient
Tj = 150 °C
Eoff
21
mJ
ꢀ Low inductance case
Rth(j-c)
Rth(c-s)
per IGBT
0.09
K/W
K/W
ꢀ Reliable mechanical design with
injection moulded terminals and
reliable internal connections
ꢀ UL recognized file no. E63532
ꢀ NTC temperature sensor inside
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
0.04
Rth(c-s)
0.021
K/W
IGBT2
VCE(sat)
Remarks*
IC = 300 A
Tj = 25 °C
1.55
1.75
1.95
2.15
V
V
V
GE = 15 V
ꢀ Case temperature limited to TC=125°C
max.
Tj = 150 °C
chiplevel
ꢀ Product reliability results are valid for
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.90
0.82
2.2
3.1
5.8
1.00
0.90
3.2
4.2
6.4
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
chiplevel
T
jop=150°C
ꢀ IGBT1: outer IGBTs T1 & T4
ꢀ IGBT2: inner IGBTs T2 & T3
ꢀ Diode1: outer diodes D1 & D4
ꢀ Diode2: inner diodes D2 & D3
VGE = 15 V
chiplevel
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
f = 1 MHz
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
5.1
0.3
18.5
1.16
0.55
3318
1.0
170
118
2.25
380
127
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
- 15 V...+ 15 V
Tj = 25 °C
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
mJ
ns
ns
I
C = 300 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 2 Ω
G off = 2 Ω
di/dton = 3100 A/µs
di/dtoff = 2800 A/µs
Tj = 150 °C
Eoff
17.25
mJ
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
0.17
K/W
K/W
0.064
0.059
Rth(c-s)
K/W
TMLI
2
Rev. 1.0 – 02.03.2016
© by SEMIKRON
SEMiX305TMLI12E4B
Characteristics
Symbol Conditions
Diode1
min.
typ.
max.
Unit
IF = 300 A
Tj = 25 °C
VF = VEC
2.20
2.15
2.52
2.47
V
V
V
GE = 0 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.30
0.90
3.0
4.2
160
41.7
1.50
1.10
3.4
V
V
mΩ
mΩ
A
chiplevel
chiplevel
4.6
SEMiX® 5
IF = 300 A
IRRM
Qrr
di/dtoff = 3100 A/µs
µC
V
V
CC = 300 V
GE = +15/-15 V
3-Level TNPC IGBT-Module
SEMiX305TMLI12E4B
Features
Tj = 150 °C
Err
8.8
mJ
Rth(j-c)
Rth(c-s)
per diode
0.16
K/W
K/W
per Diode (λgrease=0.81 W/(m*K))
per Diode, pre-applied phase change
material
0.05
Rth(c-s)
0.041
K/W
Diode2
VF = VEC
ꢀ Solderless assembling solution with
PressFIT signal pins and screw power
terminals
IF = 300 A
Tj = 25 °C
1.40
1.39
1.76
1.77
V
V
V
GE = 0 V
Tj = 150 °C
chiplevel
ꢀ IGBT 4 Trench Gate Technology
ꢀ VCE(sat) with positive temperature
coefficient
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.04
0.85
1.19
1.79
181
1.24
0.99
1.76
2.6
V
V
mΩ
mΩ
A
chiplevel
ꢀ Low inductance case
chiplevel
ꢀ Reliable mechanical design with
injection moulded terminals and
reliable internal connections
ꢀ UL recognized file no. E63532
ꢀ NTC temperature sensor inside
IF = 300 A
IRRM
Qrr
di/dtoff = 4400 A/µs
34.5
µC
V
V
R = 300 V
GE = +15/-15 V
Tj = 150 °C
Err
8.2
mJ
Remarks*
Rth(j-c)
Rth(c-s)
per diode
per Diode (λgrease=0.81 W/(m*K))
per Diode, pre-applied phase change
material
0.22
K/W
K/W
ꢀ Case temperature limited to TC=125°C
max.
0.06
ꢀ Product reliability results are valid for
Rth(c-s)
0.059
K/W
T
jop=150°C
ꢀ IGBT1: outer IGBTs T1 & T4
ꢀ IGBT2: inner IGBTs T2 & T3
ꢀ Diode1: outer diodes D1 & D4
ꢀ Diode2: inner diodes D2 & D3
Module
LsCE1
LCE
31
42
0.8
nH
nH
mΩ
measured
between terminal 5
and 1
T
C = 25 °C
RCC'+EE'
TC = 125 °C
1.1
mΩ
Rth(c-s)1
Rth(c-s)2
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
0.006
K/W
0.0106
K/W
including thermal coupling,
Ts underneath module, pre-applied
phase change material
Rth(c-s)2
0.0077
K/W
Ms
Mt
to heat sink (M5)
to terminals (M6)
3
3
6
6
Nm
Nm
Nm
g
w
398
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
3550
±2%
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
K
TMLI
© by SEMIKRON
Rev. 1.0 – 02.03.2016
3
SEMiX305TMLI12E4B
Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE'
Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Tc)
Fig. 3: Typ. IGBT1 & Diode2 turn-on /-off energy = f (IC)
Fig. 4: Typ. IGBT1 & Diode2 turn-on /-off energy = f(RG)
Fig. 5: Typ. IGBT1 transfer characteristic
Fig. 6: Typ. IGBT1 gate charge characteristic
4
Rev. 1.0 – 02.03.2016
© by SEMIKRON
SEMiX305TMLI12E4B
Fig. 7: Typ. IGBT1 switching times vs. IC
Fig. 8: Typ. IGBT1 switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT1 & Diode2
Fig. 10: Typ. Diode2 forward characteristic, incl. RCC'+ EE'
Fig. 13: Typ. IGBT2 output characteristic, incl. RCC'+ EE'
Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Tc)
© by SEMIKRON
Rev. 1.0 – 02.03.2016
5
SEMiX305TMLI12E4B
Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC)
Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG)
Fig. 17: Typ. IGBT2 transfer characteristic
Fig. 18: Typ. IGBT2 gate charge characteristic
Fig. 19: Typ. IGBT2 switching times vs. IC
Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG
6
Rev. 1.0 – 02.03.2016
© by SEMIKRON
SEMiX305TMLI12E4B
Fig. 21: Transient thermal impedance of IGBT2 & Diode1
Fig. 22: Typ. Diode1 forward characteristic, incl. RCC'+ EE'
© by SEMIKRON
Rev. 1.0 – 02.03.2016
7
SEMiX305TMLI12E4B
SEMiX5p
TMLI
8
Rev. 1.0 – 02.03.2016
© by SEMIKRON
SEMiX305TMLI12E4B
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
© by SEMIKRON
Rev. 1.0 – 02.03.2016
9
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