SEMIX402GAR066HDS_08 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX402GAR066HDS_08 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX402GAR066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
509
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
383
ICnom
400
ICRM
ICRM = 2xICnom
800
VGES
-20 ... 20
SEMiX®2s
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V
tpsc
6
µs
°C
Trench IGBT Modules
Tj
-40 ... 175
Inverse diode
SEMiX402GAR066HDs
Tc = 25 °C
Tc = 80 °C
IF
543
397
A
A
Tj = 175 °C
Preliminary Data
IFnom
IFRM
IFSM
Tj
400
A
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
800
A
1800
A
-40 ... 175
°C
Freewheeling diode
• UL recognised file no. E63532
Tc = 25 °C
Tc = 80 °C
IF
543
397
A
A
Tj = 175 °C
Typical Applications
IFnom
400
A
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
800
A
1800
A
-40 ... 175
°C
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 400 A
VCE(sat)
Tj = 25 °C
1.45
1.70
1.9
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
1.4
1
V
V
0.9
2.3
3.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
2.1
VGE(th)
ICES
VGE=VCE, IC = 6.4 mA
Tj = 25 °C
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
24.7
1.54
0.73
3200
1.00
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAR
© by SEMIKRON
Rev. 12 – 02.12.2008
1
SEMiX402GAR066HDs
Characteristics
Symbol Conditions
min.
typ.
150
125
22
max.
Unit
ns
td(on)
tr
VCC = 300 V
IC = 400 A
Tj = 150 °C
ns
Eon
mJ
ns
R
R
G on = 4.5 Ω
G off = 4.5 Ω
td(off)
tf
900
65
ns
Eoff
Rth(j-c)
Rth(j-s)
24
mJ
K/W
K/W
per IGBT
per IGBT
0.12
SEMiX®2s
Inverse diode
IF = 400 A
GE = 0 V
chiplevel
Tj = 25 °C
VF = VEC
1.4
1.4
1.6
1.6
V
V
Trench IGBT Modules
V
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.8
1
1.1
0.95
1.3
V
V
SEMiX402GAR066HDs
0.85
1.0
1.4
250
47
Preliminary Data
mΩ
mΩ
A
1.1
1.6
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
IF = 400 A
di/dtoff = 3700 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
10
mJ
Rth(j-c)
Rth(j-s)
per diode
per diode
0.15
K/W
K/W
• UL recognised file no. E63532
Typical Applications
Freewheeling diode
IF = 400 A
VF = VEC
Tj = 25 °C
1.4
1.4
1.6
1.6
V
V
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
V
GE = 0 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.8
1
1.1
0.95
1.3
V
V
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
0.85
1.0
1.4
250
47
mΩ
mΩ
A
1.1
1.6
IF = 400 A
di/dtoff = 3700 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
10
mJ
• Take care of over-voltage caused by
stray inductance
Rth(j-c)
Rth(j-s)
per diode
per diode
0.15
K/W
K/W
Module
LCE
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
250
Temperature sensor
0,493
±5%
R100
Tc=100°C (R25=5 kΩ)
kΩ
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAR
2
Rev. 12 – 02.12.2008
© by SEMIKRON
SEMiX402GAR066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
© by SEMIKRON
Rev. 12 – 02.12.2008
3
SEMiX402GAR066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 12 – 02.12.2008
© by SEMIKRON
SEMiX402GAR066HDs
SEMiX 2s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 12 – 02.12.2008
5
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