SEMIX453GAL12T4S [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX453GAL12T4S |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：1206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 453GB12T4s
ꢋ
ꢏ ()*ꢕ4 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
'(..
89)
ꢔ
"
"
6ꢕ
ꢋ- ꢏ '7) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 9. *ꢕ
)()
6ꢕ2:
ꢔ3ꢖꢉ
ꢑꢚꢈꢍ
6ꢕ2:ꢏ;+6ꢕꢆꢂꢃ
';).
< (.
'.
"
ꢔ
®
ꢔꢕꢕ ꢏ 8.. ꢔ= ꢔ3ꢖ > (. ꢔ= ꢋ- ꢏ '). *ꢕ
ꢔꢕꢖꢉ ? '(.. ꢔ
@ꢈ
SEMiX 3s
Inverse Diode
Trench IGBT Modules
6A
ꢋ- ꢏ '7) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 9. *ꢕ
)B)
B.)
"
"
6A2:
6A2:ꢏ;+6Aꢆꢂꢃ
';).
"
SEMiX 453GB12T4s
SEMiX 453GAL12T4s
SEMiX 453GAR12T4s
Target Data
Module
6ꢑꢗ2:ꢉꢘ
8..
"
*ꢕ
*ꢕ
ꢔ
ꢋꢛ-
C B. ,,, D '7)
C B. ,,, D '()
B...
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ4 ' ꢃꢊꢆ,
Features
ꢋ
ꢏ ()*ꢕ4 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ4 6ꢕ ꢏ '9 ꢃ"
)
)49
84)
ꢔ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
6ꢕꢖꢉ
ꢔ3ꢖ ꢏ . ꢔ4 ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
ꢋ- ꢏ () *ꢕ
.4;
.4E
.49
(4B
;48
(
ꢃ"
ꢔ
ꢀ
ꢔꢕꢖ.
.49
.47
(4(
;4;
'49
(4(
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ ()*ꢕ
ꢔ
ꢀ
ꢀ
ꢀ
ꢌꢕꢖ
ꢔ3ꢖ ꢏ ') ꢔ
ꢃ5
ꢃ5
ꢔ
ꢋ- ꢏ ').*ꢕ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢔꢕꢖꢗꢈꢐꢑꢘ
6ꢕꢆꢂꢃ ꢏ B). "4 ꢔ3ꢖ ꢏ ') ꢔ ꢋ- ꢏ ()*ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ ').*ꢕꢍꢎꢊꢚꢒꢅꢛ,
Remarks
(4B
ꢔ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢕꢊꢅꢈ
(74E
'47
ꢆA
ꢆA
ꢀ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ ()4 ꢔ3ꢖ ꢏ . ꢔ
ꢏ ' :ꢁF
ꢕ
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢕꢌꢅꢈ
G3
'4)
(8..
'47
ꢆA
ꢆꢕ
H
ꢀ
ꢂꢌ ꢋ ꢏ').*ꢕ
-
ꢔ3ꢖ ꢏ C9 ,,, D')ꢔ
ꢋ- ꢏ () *ꢕ
/ꢓꢆꢐꢃꢊꢍ ꢛꢐꢒꢇꢅꢈ ꢐꢚꢚꢒꢓ ꢑꢂ ꢑꢎꢅ
ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢃ!ꢊꢆꢐꢑꢊꢂꢆ ꢂ ꢌꢅꢈꢊꢈꢑꢂꢌꢈ0
ꢀ
23ꢊꢆꢑ
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
;.)
9.
ꢆꢈ
ꢆꢈ
ꢃJ
ꢆꢈ
ꢆꢈ
2
2
2
2
ꢏ'4.54
ꢏ'4.54
ꢏ(4(5 ꢅꢐꢍꢎ4
3ꢂꢆ4ꢃꢐꢊꢆ
23ꢂꢆ ꢏ '4E 5
ꢔꢕꢕ ꢏ 8..ꢔ
6ꢕꢆꢂꢃꢏ B)."
ꢋ- ꢏ '). *ꢕ
3ꢂ 4ꢃꢐꢊꢆ
#ꢊI#ꢑ ꢏ B... "I@ꢈ
23ꢂ ꢏ '4E 5
B)
34+
);)
'..
ꢏ.4)5 ꢅꢐꢍꢎ
ꢖ4+
ꢑ
#ꢊI#ꢑ ꢏ )... "I@ꢈ
ꢖꢂ
).
ꢃJ
2ꢑꢎꢗ-Cꢍꢘ
ꢚꢅꢌ 63Kꢋ
.4.8)
LI&
GB
GAL
GAR
1
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔA ꢏ ꢔꢖꢕ
6Aꢆꢂꢃ ꢏ B). "= ꢔ3ꢖ ꢏ . ꢔ
ꢋ- ꢏ () *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ '). *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ () *ꢕ
(4')
(4.)
'4;
(4B)
(4B
'4)
'4'
(4'
(4E
ꢔ
ꢔ
ꢔA.
ꢔ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ () *ꢕ
.4E
ꢔ
ꢌA
'4E
ꢃ5
ꢃ5
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ '). *ꢕ
(48
®
622:
Gꢌꢌ
6Aꢆꢂꢃ ꢏ B). "
;).
7.
"
SEMiX 3s
#ꢊI#ꢑ ꢏ )... "I@ꢈ
@ꢕ
ꢖꢌꢌ
ꢔ3ꢖ ꢏ C') ꢔ= ꢔꢕꢕ ꢏ 8.. ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
(9
ꢃJ
Trench IGBT Modules
2ꢑꢎꢗ-Cꢍꢘ/
.4''
LI&
Module
Mꢕꢖ
(.
.47
'
ꢆꢁ
ꢃ5
ꢃ5
SEMiX 453GB12T4s
SEMiX 453GAL12T4s
SEMiX 453GAR12T4s
Target Data
2ꢕꢕNDꢖꢖN
ꢌꢅꢈ,4 ꢑꢅꢌꢃꢊꢆꢐꢒCꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ () *ꢕ
ꢋꢍꢐꢈꢅꢏ '() *ꢕ
2ꢑꢎꢗꢍCꢈꢘ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
.4.B
LI&
Pꢃ
Pꢃ
ꢄ
:
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆO ꢗ:)ꢘ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ:8ꢘ
;
)
)
ꢈ
:
(4)
ꢑ
ꢙ
;..
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
Temperature sensor
ꢀ
ꢀ
ꢀ
2'..
ꢋꢍꢏ'..*ꢕ ꢗ2()ꢏ) O5ꢘ
2ꢗꢋꢘꢏ2'..ꢅ+ꢚRK'..I'()ꢗ'IꢋC'Iꢋ'..ꢘS=
ꢋRLS
.4BE;<)Q
;)).<(Q
O5
L
K'..I'()
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢀ
ꢕ
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢀ
ꢂꢌ ꢋ ꢏ').*ꢕ
-
/ꢓꢆꢐꢃꢊꢍ ꢛꢐꢒꢇꢅꢈ ꢐꢚꢚꢒꢓ ꢑꢂ ꢑꢎꢅ
ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢃ!ꢊꢆꢐꢑꢊꢂꢆ ꢂ ꢌꢅꢈꢊꢈꢑꢂꢌꢈ0
ꢀ
2
2
2
2
ꢏ'4.54
ꢏ'4.54
ꢏ(4(5 ꢅꢐꢍꢎ4
3ꢂꢆ4ꢃꢐꢊꢆ
3ꢂ 4ꢃꢐꢊꢆ
34+
ꢏ.4)5 ꢅꢐꢍꢎ
ꢖ4+
GB
GAL
GAR
2
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
27-09-2007 SCT
© by SEMIKRON
SEMiX 453GB12T4s
ꢕꢐꢈꢅ ꢉꢖ:ꢊT ;ꢈ
%ꢊꢆꢂꢇꢑ
3K
%ꢊꢆꢂꢇꢑ
3"M
%ꢊꢆꢂꢇꢑ
3"2
5
27-09-2007 SCT
© by SEMIKRON
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