SEMIX603GAR066HD [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX603GAR066HD |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 603GB066HD ...
ꢋ
ꢏ '()ꢕ6 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
Values
Units
IGBT
ꢔꢕꢖꢉ
1..
95. ꢗ('.ꢘ
8.. ꢗ1&.ꢘ
&'..
ꢔ
:
$
$
$
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &(. )ꢕ
ꢕ
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &9( )ꢕ
ꢑꢚ ꢏ & ꢃꢈ
:
ꢕ
:
ꢕ#!
ꢔ4ꢖꢉ
; '.
ꢔ
ꢋ-6 ꢗꢋꢈꢑꢄ
ꢘ
< =. *** > &9( ꢗ&'(ꢘ
)ꢕ
ꢔꢊꢈꢂꢒ
:ꢕ6 & ꢃꢊꢆ*
=...
ꢔ
®
SEMiX 3
Inverse diode
$
$
$
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &(. )ꢕ
(5. ꢗ5(.ꢘ
(@. ꢗ=5.ꢘ
&'..
:
:
:
?
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &9( )ꢕ
ꢑꢚ ꢏ & ꢃꢈ
?
Trench IGBT Modules
?#!
$
ꢑꢚ ꢏ &. ꢃꢈ3 ꢈꢊꢆ*3 ꢋ- ꢏ '( )ꢕ
'9..
:
?ꢉ!
Freewheeling diode
SEMiX 603GB066HD
SEMiX 603GAL066HD
SEMiX 603GAR066HD
Target Data
$
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &(. )ꢕ
1=. ꢗ=5.ꢘ
9&. ꢗ('.ꢘ
:
:
?
$
ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &(. )ꢕ
ꢑꢚ ꢏ &. ꢃꢈ3 3 ꢋ- ꢏ &9( )ꢕ
?
$
:
?ꢉ!
ꢋ
ꢏ '()ꢕ6 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
Features
ꢔ4ꢖꢗꢑꢎꢘ
ꢔ4ꢖ ꢏ ꢔꢕꢖ6 $ꢕ ꢏ = ꢃ:
(68
ꢔ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
$
ꢔ4ꢖ ꢏ .6 ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ6 ꢋ- ꢏ '( ꢗꢘ )ꢕ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
.6&
ꢃ:
ꢔ
ꢕꢖꢉ
ꢔꢕꢖꢗꢋAꢘ
ꢌꢕꢖ
.6@ ꢗ.68(ꢘ
.6@ ꢗ&6=ꢘ
& ꢗ.6@ꢘ
&6( ꢗ'ꢘ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢔ4ꢖ ꢏ &( ꢔ6 ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
ꢃB
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔꢕꢖꢗꢈꢐꢑꢘ
$ꢕꢆꢂꢃ ꢏ 1.. :6 ꢔ4ꢖ ꢏ &( ꢔ6
&6=( ꢗ&69ꢘ
&6@ ꢗ'6&ꢘ
ꢔ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ6 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
Typical Applications
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Dꢕꢖ
ꢇꢆ%ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
59
'65
&6&
'.
ꢆ?
ꢆ?
ꢆ?
ꢆꢁ
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
ꢔ4ꢖ ꢏ .6 ꢔꢕꢖ ꢏ '( ꢔ6 ꢏ & !ꢁC
ꢀ
#
ꢑꢅꢌꢃꢊꢆꢐꢒ<ꢍꢎꢊꢚ6 ꢋꢍꢏ '( ꢗ&'(ꢘ )ꢕ
.69 ꢗ&6.(ꢘ
ꢃB
ꢕꢕE>ꢖꢖE
Remarks
ꢑ%ꢗꢂꢆꢘFꢑꢌ
ꢔꢕꢕ ꢏ 5.. ꢔ6 $ꢕꢆꢂꢃ ꢏ 1.. :
ꢔ4ꢖ ꢏ ;&(ꢔ
&=( F &=(
ꢆꢈ
ꢆꢈ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ ꢋ ꢏ
&'()ꢕ ꢃꢐ"*
ꢀ
ꢕ
ꢑ%ꢗꢂ ꢘFꢑ
&.5. F &.(
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
#4ꢂꢆ ꢏ #4ꢂ ꢏ 5 G6 ꢋ- ꢏ &(. )ꢕ
&' ꢗ=5ꢘ
ꢃH
+ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ,ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
ꢀ
ꢂꢌ ꢋ ꢏ&(.)ꢕ
Inverse diode, Freewheeling diode
ꢔ? ꢏ ꢔꢖꢕ
-
$?ꢆꢂꢃ ꢏ 1.. :3 ꢔ4ꢖ ꢏ . ꢔ3 ꢋ- ꢏ '( ꢗ&(.ꢘ
&6= ꢗ&6=ꢘ
&61
ꢔ
ꢉꢕ %ꢐꢑꢐ/ ꢑ 0 1 2ꢈ3 ꢔ 0 &( ꢔ3 ꢋ
ꢏ &(.)ꢕ3 ꢔ ꢏ 51. ꢔ
ꢀ
ꢚ
4ꢖ
-
)ꢕ6 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢕꢕ
ꢔꢗꢋAꢘ
ꢌꢋ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
& ꢗ.68(ꢘ
.69 ꢗ.6@ꢘ
5('
&6&
ꢔ
ꢃB
:
ꢀ
.685
$
$?ꢆꢂꢃ ꢏ 1.. :3 ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
##!
Iꢌꢌ
ꢖꢌꢌ
%ꢊF%ꢑ ꢏ 58.. :F2ꢈ
15
2ꢕ
ꢔ4ꢖ ꢏ <&( ꢔ
&5
ꢃH
Thermal characteristics
#
#
#
ꢚꢅꢌ $4Jꢋ
.6.95
.6&(
KFL
KFL
KFL
ꢑꢎꢗ-<ꢍꢘ
ꢚꢅꢌ $ꢆꢛꢅꢌꢈꢅ Mꢊꢂ%ꢅ
ꢚꢅꢌ ?LM
ꢑꢎꢗ-<ꢍꢘM
ꢑꢎꢗ-<ꢍꢘ?M
#
ꢚꢅꢌ ꢃꢂ%ꢇꢒꢅ
.6.=
KFL
ꢑꢎꢗꢍ<ꢈꢘ
Temperature sensor
#
ꢋꢍ ꢏ '( )ꢕ
( ;(N
5='.
OG
K
'(
J'(F8(
#'ꢏ#&ꢅ"ꢚPJꢗ&Fꢋ'<&Fꢋ&ꢘQ 3 ꢋPKQ3J
Mechanical data
!ꢈF!ꢑ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆO ꢗ!(ꢘ F ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ!1ꢘ
5F'6(
( F(
Rꢃ
ꢄ
ꢙ
'8@
GB
GAL
GAR
1
20-04-2006 GES
© by SEMIKRON
SEMiX 603GB066HD ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
20-04-2006 GES
© by SEMIKRON
SEMiX 603GB066HD ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward charact., incl. RCC´+EE´
3
20-04-2006 GES
© by SEMIKRON
SEMiX 603GB066HD ...
Fig. 13 Typ. CAL diode recovered charge
4J
+ꢊꢆꢂꢇꢑ ꢉꢖ!ꢊS 5
ꢕꢐꢈꢅ ꢉꢖ!ꢊS5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-04-2006 GES
© by SEMIKRON
相关型号：
©2020 ICPDF网 联系我们和版权申明