SK100GD066T_09 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK100GD066T_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：901K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK100GD066T
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
1*ꢗꢖ
ꢚ63#45*
899
!94
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1
+
+
ꢙ*
ꢚ63!:45*
ꢚꢄ3#45*
ꢚꢄ3:95*
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8
+
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Inverse Diode
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ꢚꢄ3#45*
ꢚꢄ3:95*
BB
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+
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IGBT Module
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Characteristics
Symbol Conditions
IGBT
Features
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ꢖꢗꢘꢙꢚꢁꢛ !"#"$
min.
typ.
max. Units
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1
Typical Applications*
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GD-T
1
26-02-2009 DIL
© by SEMIKRON
SK100GD066T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1ꢐ31ꢗ*
ꢙꢐꢂꢉꢈ3!99+>1(ꢗ391 ꢚ63#45*ꢅꢕꢌꢒꢏꢃ%2
!"$
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1
1
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ꢚ63#45*
1ꢐ9
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9";4
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1
ꢚ63!495*
ꢚ63#45*
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ꢆꢐ
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ꢚ63!495*
ꢚ63!495*
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ꢙꢐ3!99+
89
+
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4"8
A*
SEMITOP 4
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9";
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IGBT Module
ꢘꢄ
ꢇ
ꢋꢉꢕꢃꢓꢋꢄꢌꢂ0
#"4
#":4
/ꢈ
ꢍ
89
SK100GD066T
Temperature sensor
<
ꢚꢄ3!995*C<#4340HD
FB$=4O
H
!99
Preliminary Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
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ꢐꢊꢏꢏꢑꢅꢉꢈꢒꢓꢋꢌꢔꢏꢃꢇꢌꢋꢕ
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* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
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ꢀ
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ꢄꢃꢂꢄꢉꢆ
ꢀ
ꢀ
ꢀ
Typical Applications*
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ꢚꢑꢒ2ꢈꢉꢋꢉꢆꢒꢉꢇꢃꢆ!!0-
ꢀ
ꢀ
GD-T
2
26-02-2009 DIL
© by SEMIKRON
SK100GD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
26-02-2009 DIL
© by SEMIKRON
SK100GD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
26-02-2009 DIL
© by SEMIKRON
SK100GD066T
UL recognized
file no E 63 532
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*ꢓꢄꢃꢚ:F
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5
26-02-2009 DIL
© by SEMIKRON
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