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SK200GD066T_07 [SEMIKRON]

IGBT Module; IGBT模块
SK200GD066T_07
型号： SK200GD066T_07
厂家： SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述：

IGBT Module
IGBT模块

双极性晶体管
文件： 总5页 (文件大小：824K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SK200GD066T  
ꢚ 6#57*"ꢊꢂꢏꢃꢄꢄꢉꢋꢕꢃꢆꢇꢌꢄꢃꢄꢒꢃꢅꢌ&ꢌꢃꢎ  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
ꢄ
Values  
Units  
2*ꢗꢖ  
ꢚ86#57*  
:;;  
!<0  
!$!  
2
+
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ꢙ*  
ꢚ86!<57*  
ꢚꢄ6#57*  
ꢚꢄ6<;7*  
ꢙ*=ꢘ  
2(ꢗꢖ  
ꢋꢒꢄꢅ  
ꢙ*=ꢘ6#'ꢙ*ꢂꢉꢈ  
0;;  
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2**6$:;2?2(ꢗ@#;2? ꢚ86!#57*  
2*ꢗꢖA:;;2  
Bꢄ  
®
SEMITOP 4  
Inverse Diode  
ꢙꢐ  
ꢚ86!<57*  
ꢚꢄ6#57*  
ꢚꢄ6<;7*  
CC  
<C  
+
+
IGBT Module  
ꢙꢐ=ꢘ  
ꢙꢐ=ꢘ6#'ꢙꢐꢂꢉꢈ  
!#;  
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Module  
ꢙꢋD=ꢘꢖE  
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7*  
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SK200GD066T  
ꢚ%8  
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F0;333G!#5  
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ꢚꢄꢋꢍ  
2ꢌꢄꢉꢏ  
Target Data  
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Characteristics  
Symbol Conditions  
IGBT  
ꢄ
Features  
min.  
typ.  
max. Units  
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!!$!  
4:  
ꢂꢄ  
ꢂꢄ  
ꢈL  
ꢂꢄ  
ꢂꢄ  
=(ꢉꢂ6##H  
2**6$;;2  
ꢙ*ꢂꢉꢈ6#;;+  
ꢚ86!#57*  
ꢗꢉꢂ  
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ꢋꢕD8FꢄE  
GD-T  
1
14-09-2007 DIL  
© by SEMIKRON  
SK200GD066T  
Characteristics  
Symbol Conditions  
Inverse Diode  
min.  
typ.  
max. Units  
2ꢐ62ꢗ*  
ꢙꢐꢂꢉꢈ6#;;+?2(ꢗ6;2 ꢚ86#57*ꢅꢕꢌꢒꢏꢃ%3  
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ꢚ86#57*  
2
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ꢚ86!#57*  
$"5  
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Nꢆꢆ  
ꢙꢐꢂꢉꢈ6#;;+  
4;  
#;  
+
ꢎꢌKꢎꢋ6#5<5+KBꢄ  
B*  
®
SEMITOP 4  
ꢗꢆꢆ  
2**6$;;2  
ꢒꢃꢆꢎꢌꢉꢎꢃ  
$"#  
;"4  
ꢈL  
=
MK-  
ꢋꢕD8FꢄE.  
IGBT Module  
ꢘꢄ  
ꢇ
ꢋꢉꢕꢃꢓꢋꢄꢌꢂ1  
$"5  
/ꢈ  
ꢍ
:;  
Temperature sensor  
SK200GD066T  
=
ꢚꢄ6!;;7*D=#5651HE  
0C$>5O  
H
!;;  
Target Data  
This is an electrostatic discharge sensitive device (ESDS), international standard  
IEC 60747-1, Chapter IX.  
Features  
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ꢐꢊꢏꢏꢑꢅꢉꢈꢒꢓꢋꢌꢔꢏꢃꢇꢌꢋꢕ  
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This technical information specifies semiconductor devices but promises no  
characteristics. No warranty or guarantee expressed or implied is made regarding  
delivery, performance or suitability.  
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ꢚꢆꢃꢂꢅꢕꢙ()ꢚꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑ  
*+,ꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑꢐ-.  
ꢙꢂꢋꢃꢍꢆꢓꢋꢃꢎ/ꢚ*ꢋꢃꢈꢒꢃꢆꢓꢋꢊꢆꢃ  
ꢄꢃꢂꢄꢉꢆ  
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ꢀ
ꢀ
Typical Applications  
ꢙꢂ%ꢃꢆꢋꢃꢆꢊꢒꢋꢉ0#12+  
ꢚꢑꢒ3ꢈꢉꢋꢉꢆꢒꢉꢇꢃꢆ!4"51-  
ꢀ
ꢀ
GD-T  
2
14-09-2007 DIL  
© by SEMIKRON  
SK200GD066T  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
3
14-09-2007 DIL  
© by SEMIKRON  
SK200GD066T  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 10 CAL diode forward characteristic  
4
14-09-2007 DIL  
© by SEMIKRON  
SK200GD066T  
*ꢓꢄꢃꢚ<0Dꢖꢊꢍꢍꢃꢄꢋꢃꢎꢕꢉꢏꢃꢎꢌꢓꢈꢃꢋꢃꢆ&ꢉꢆꢋꢕꢃꢄꢉꢏꢎꢃꢆꢒꢌꢂꢄꢌꢂꢋꢕꢃꢅꢌꢆꢅꢊꢌꢋꢔꢉꢓꢆꢎP#ꢈꢈ3ꢖꢊꢍꢍꢃꢄꢋꢃꢎꢕꢉꢏꢃꢎꢌꢓꢈꢃꢋꢃꢆ&ꢉꢆꢋꢕꢃ  
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*ꢓꢄꢃꢚ<0  
(.Fꢚ  
5
14-09-2007 DIL  
© by SEMIKRON  

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