SK25GH12T4 [SEMIKRON]
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES;
| 型号： | SK25GH12T4 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES 栅 |
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 25 GH 12T4
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
35
29
25
75
V
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
SEMITOP® 3
IGBT module
SK 25 GH 12T4
Features
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse - Diode
Ts = 25 °C
Ts = 70 °C
IF
28
22
25
75
100
A
A
A
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 150 °C
• Compact design
-40 ... 175
°C
• One screw mounting
Module
It(RMS)
Tstg
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
,
A
°C
V
-40 ... 125
2500
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
min.
typ.
max.
Unit
Typical Applications*
• Inverter
IC = 25 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
• Motor drive
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
42.0
62.0
5.8
0.9
0.8
48.0
66.0
6.5
V
V
m
m
V
mA
mA
nF
nF
nF
nC
chiplevel
VGE = 15 V
VGE = VCE, IC = 0.85 mA
Tj = 25 °C
VGE(th)
ICES
5
VGE = 0 V
CE = 1200 V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
1.43
0.115
0.085
142
0.00
22
19.5
2.27
288
77.5
2.7
VCE = 25 V
GE = 0 V
V
- 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
mJ
ns
ns
I
C = 25 A
R
R
G on = 19
G off = 19
di/dton = 2825 A/µs
di/dtoff = 2825 A/µs
V
GE = +15/-7 V
mJ
K/W
per IGBT
1.31
GH
© by SEMIKRON
Rev. 0 – 14.06.2012
1
SK 25 GH 12T4
Characteristics
Symbol Conditions
Inverse - Diode
min.
typ.
max.
Unit
IF = 25 A
Tj = 25 °C
VF = VEC
2.41
2.45
2.74
2.79
V
V
Tj = 150 °C
chiplevel
VF0
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
1.1
0.7
36.0
1.3
0.9
44.4
62.0
31.5
1.15
1.5
1.1
49.6
67.6
V
V
m
m
A
rF
SEMITOP® 3
IGBT module
SK 25 GH 12T4
Features
IF = 25 A
IRRM
di/dtoff = 2825 A/µs
Qrr
µC
V
V
GE = -7 V
CC = 600 V
Tj = 150 °C
Err
1.28
1.91
mJ
Rth(j-s)
per diode
K/W
Module
Ms
w
Mounting torque
2.3
2.5
Nm
g
29
Temperatur Sensor
R100
R(T)
• Compact design
, ,
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
Typical Applications*
• Inverter
• Motor drive
GH
2
Rev. 0 – 14.06.2012
© by SEMIKRON
SK 25 GH 12T4
Fig. 1: Typical IGBT output characteristic
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 7: Typ. switching times vs. IC
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 14.06.2012
3
SK 25 GH 12T4
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 10: CAL diode forward characteristic
4
Rev. 0 – 14.06.2012
© by SEMIKRON
SK 25 GH 12T4
GH
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 14.06.2012
5
相关型号：
©2020 ICPDF网 联系我们和版权申明