SK30GD123 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK30GD123 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 30 GD 123
$ 3 10 4ꢁ! ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
ꢊ
Values
Units
IGBT
5ꢁ-"
5'-"
6177
8 17
5
5
<
<
&
&
$ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
// ꢘ11ꢛ
.. ꢘ??ꢛ
ꢁ
ꢇꢄ > 6 ꢃꢊ; $ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
ꢁ=
$
% ?7 ,,, A 607
4ꢁ
@
Inverse/Freewheeling CAL diode
&
$ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
1? ꢘ6Cꢛ
?: ꢘ/?ꢛ
<
<
B
®
&B= 3 % &ꢁ=
ꢇꢄ > 6 ꢃꢊ; $ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
SEMITOP 3
$
% ?7 ,,, A 607
4ꢁ
@
$
$
% ?7 ,,, A 610
1.7
4ꢁ
4ꢁ
ꢊꢇꢌ
IGBT Module
$ꢉꢏꢃꢋꢍꢅꢔꢊ! 67 ꢊ
ꢊꢂꢔ
5ꢋꢊꢂꢔ
<ꢁ 07 ꢒ+! ꢏ,ꢃ,ꢊ, 6 ꢃꢋꢍ, D 6 ꢊ
1077 D /777
5
SK 30 GD 123
$ 3 10 4ꢁ! ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Preliminary Data
min.
typ.
max. Units
5ꢁ-ꢘꢊꢅꢇꢛ
5'-ꢘꢇꢕꢛ
ꢁꢋꢉꢊ
&ꢁ 3 10 <! $@ 3 10 ꢘ610ꢛ 4ꢁ
1!0 ꢘ/!6ꢛ
0!0
/ ꢘ/!Cꢛ
.!0
5
5
Features
5ꢁ- 3 5'-; &ꢁ 3 7!776 <
5ꢁ- 3 10 5; 5'- 3 7 5; 6 =ꢒ+
ꢄꢉꢏ &'ꢚ$
?!0
6!.0
ꢍB
FDG
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
Eꢇꢕꢘ@%ꢊꢛ
6
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
FDG
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊH
5ꢁꢁ 3 .77 5 ! 5'- 3 8 60 5
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
.0
677
?/7
/0
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
&ꢁ 3 10 <! $@ 3 610 4ꢁ
ꢆꢕꢅꢍꢍꢉꢔ! ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ "ꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ #$% ꢂꢍ ꢄꢑꢍꢆꢕꢇꢏꢂꢑꢌꢕ
&'ꢚ$ꢛ
ꢀ
E'ꢂꢍ 3 E'ꢂꢓꢓ 3 ?C I
-ꢂꢍ A -ꢂꢓꢓ
&ꢍꢈꢑꢆꢇꢋ2ꢉ ꢔꢂꢅꢈ
C
ꢃJ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ(
)ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
ꢀ
Inverse/Freewheeling CAL diode
5B 3 5-ꢁ
5ꢘ$ꢎꢛ
ꢏ$
&
B 3 60 <; $@ 3 10 ꢘ610ꢛ 4ꢁ
1 ꢘ6!:ꢛ
ꢘ6ꢛ
1!0 ꢘ1!/ꢛ
ꢘ6!1ꢛ
5
5
$@ 3 ꢘ610ꢛ 4ꢁ
$@ 3 ꢘ610ꢛ 4ꢁ
*) ꢏꢉꢆꢂꢌꢍꢋ+ꢉꢈ! ꢓꢋꢔꢉ ꢍꢂ, - ./0/1
ꢀ
ꢘ0/ꢛ
ꢘC/ꢛ
ꢃI
Typical Applications
Eꢇꢕꢘ@%ꢊꢛ
6!C
FDG
"ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘ ꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ ꢛ
&ꢍ2ꢉꢏꢇꢉꢏ
"ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*#"
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊH
ꢀ
ꢀ
ꢀ
ꢀ
&
&B 3 60 <; 5E 3 .77 5
6.
<
EE=
Kꢏꢏ
ꢈ&BDꢈꢇ 3 %177 <DLꢊ
1!C
Lꢁ
-
5'- 3 7 5; $@ 3 610 4ꢁ
7!.
ꢃJ
ꢂꢓꢓ
Mechanical data
=6
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏMꢑꢉ
1!0
ꢃ
ꢌ
ꢐ
/7
ꢁꢅꢊꢉ
"-=&$ꢎ#N
/
$ 61
GD
1
19-10-2005 RAM
© by SEMIKRON
SK 30 GD 123
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
19-10-2005 RAM
© by SEMIKRON
SK 30 GD 123
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
19-10-2005 RAM
© by SEMIKRON
SK 30 GD 123
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ $ 61
'ꢙ
"*''-"$-ꢙ ꢒꢎ)-ꢙ&<=-$-E BꢎE $ꢒ- "ꢎ)ꢙ-E #& " < ꢙ $ꢒ- =ꢎ* $& ' #& " & $ꢒ-
#ꢁꢚH 1 ꢃꢃ
ꢁꢅꢊꢉ $ 61
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2005 RAM
© by SEMIKRON
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