SK50GARL065 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK50GARL065 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 50 GARL 065
# * +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
/
122
3 +2
/
/
8
8
ꢁ0(
/
%0(
$
$
#ꢊ * +, ꢘ52ꢛ -ꢁ6
,7 ꢘ72ꢛ
;25 ꢘ52ꢛ
ꢁ
ꢇꢄ : ; ꢃꢊ6 #ꢊ * +, ꢘ52ꢛ -ꢁ6
ꢁ9
#
! 72 === > ;,2
-ꢁ
<
Freewheeling CAL diode
$
#ꢊ * +, ꢘ52ꢛ -ꢁ6
17 ꢘ75ꢛ
8
8
?
®
$?9 * ! $ꢁ9
ꢇꢄ : ; ꢃꢊ6 #ꢊ * +, ꢘ52ꢛ -ꢁ6
;+7 ꢘ@1ꢛ
SEMITOP 2
#
! 72 === > ;,2
-ꢁ
<
#
#
! 72 === > ;+,
+12
-ꢁ
-ꢁ
ꢊꢇꢌ
IGBT Module
#ꢉꢏꢃꢋꢍꢅꢔꢊ. ;2 ꢊ
ꢊꢂꢔ
/
8ꢁ ,2 ꢒA. ꢏ=ꢃ=ꢊ= ; ꢃꢋꢍ= B ; ꢊ
+,22 B C222
/
ꢋꢊꢂꢔ
SK 50 GARL 065
# * +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Preliminary Data
min.
typ.
max. Units
/
$ꢁ * 72 8. #< * +, ꢘ;+,ꢛ -ꢁ
;.D ꢘ+.+ꢛ
+ ꢘ+.+ꢛ
,
/
/
ꢁ0ꢘꢊꢅꢇꢛ
Features
/
/ꢁ0 * /%06 $ꢁ * 2.222D 8
C
7
C
%0ꢘꢇꢕꢛ
ꢁꢋꢉꢊ
/ꢁ0 * +, /6 /%0 * 2 /6 ; 9ꢒA
ꢍ?
FBG
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
Eꢇꢕꢘ<!ꢊꢛ
ꢄꢉꢏ $%ꢚ#
2.5,
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
FBG
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊH
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
/
ꢁꢁ * C22 / . /%0 * 3 ;, /
12
C2
52
72
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
$ꢁ * 72 8. #< * ;+, -ꢁ
!ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
ꢀ
E%ꢂꢍ * E%ꢂꢓꢓ * ;1 I
++2
+2
+52
+1
0ꢂꢍ > 0ꢂꢓꢓ
$ꢍꢈꢑꢆꢇꢋ'ꢉ ꢔꢂꢅꢈ
;.5
+.7
ꢃJ
&ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
Freewheeling CAL diode
/? * /0ꢁ
$? * ,2 86 #< * +, ꢘ;+,ꢛ -ꢁ
;.7, ꢘ;.7ꢛ ;.D ꢘ;.D,ꢛ
/
/
&ꢂꢐ ꢇꢕꢏꢉꢊꢕꢂꢔꢈ 'ꢂꢔꢇꢅꢌꢉ
ꢀ
/
#< * ꢘ;+,ꢛ -ꢁ
#< * ꢘ;+,ꢛ -ꢁ
ꢘ2.5,ꢛ
ꢘ;;ꢛ
ꢘ2.@ꢛ
ꢘ;1ꢛ
ꢘ#ꢎꢛ
Typical Applications
ꢏ#
ꢃI
Eꢇꢕꢘ<!ꢊꢛ
;.;
FBG
(ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
$ꢍ'ꢉꢏꢇꢉꢏ
(ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
)"(
ꢀ
ꢀ
ꢀ
ꢀ
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊH
$
$
? * ,2 86 /E * C22 /
ꢈ$?Bꢈꢇ * !;222 8BLꢊ
%0 * 2 /6 #< * ;+, -ꢁ
72
8
EE9
Kꢏꢏ
C.1
Lꢁ
0ꢂꢓꢓ
/
2.,,
ꢃJ
Mechanical data
9;
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏMꢑꢉ
+
ꢃ
ꢌ
ꢐ
;@
ꢁꢅꢊꢉ
(09$#ꢎ"N
+
# C;
GARL
1
20-10-2005 RAM
© by SEMIKRON
SK 50 GARL 065
Fig.1 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.2 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.3 Turn-on / -off energy = f (IC)
Fig.4 Turn-on / -off energy = f (RG)
Fig.5 Typ. gate charge characteristic
Fig.6 Typ. capacitances vs. VCE
2
20-10-2005 RAM
© by SEMIKRON
SK 50 GARL 065
Fig.7 Typ. switching times vs. IC
Fig.8 Typ. switching times vs. gate resistor RG
Fig.9 Diode (Freewheeling diode) turn-off energy dissipation per pulse
3
20-10-2005 RAM
© by SEMIKRON
SK 50 GARL 065
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ #C;
%8E&
()%%0(#0ꢙ ꢒꢎ&0ꢙ$890#0E ?ꢎE #ꢒ0 (ꢎ&ꢙ0E "$ ( 8 ꢙ #ꢒ0 9ꢎ) #$ % "$ ( $ #ꢒ0
"ꢁꢚH + ꢃꢃ
ꢁꢅꢊꢉ #C;
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-10-2005 RAM
© by SEMIKRON
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