SK50GD12T4TP [SEMIKRON]

Insulated Gate Bipolar Transistor,;
SK50GD12T4TP
型号: SK50GD12T4TP
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Insulated Gate Bipolar Transistor,

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中文:  中文翻译
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SK 50 GD 12T4 Tp  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT 1  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
67  
50  
75  
60  
50  
150  
-20 ... 20  
V
A
A
A
A
A
A
V
Ts = 25 °C  
Ts = 70 °C  
Ts = 25 °C  
Ts = 70 °C  
Tj = 150 °C  
IC  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITOP® 4 Press-Fit  
ICRM = 3 x ICnom  
VCC = 800 V  
IGBT module  
tpsc  
Tj  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
10  
µs  
°C  
-40 ... 175  
SK 50 GD 12T4 Tp  
Absolute Maximum Ratings  
Symbol Conditions  
Diode 1  
Target Data  
Values  
Unit  
Features  
• One screw mounting module  
• Solder free mounting with Press-Fit  
terminals  
Tj = 25 °C  
VRRM  
IF  
1200  
53  
V
A
Ts = 25 °C  
Ts = 70 °C  
Ts = 25 °C  
Ts = 70 °C  
Tj = 150 °C  
• Fully compatible with SEMITOP®  
Press-Fit types  
40  
A
IF  
60  
A
Tj = 175 °C  
• Improved thermal performances by  
aluminium oxide substrate  
48  
A
IFnom  
IFRM  
IFSM  
Tj  
50  
A
• Trench4 IGBT technology  
• CAL4F technology FWD  
• Integrated NTC temperature sensor  
• UL recognized, file no. E 63 532  
IFRM = 3 x IFnom  
10 ms, sin 180°, Tj = 150 °C  
150  
A
270  
A
-40 ... 175  
°C  
Typical Applications*  
• Inverter up to 26kVA  
Absolute Maximum Ratings  
Symbol Conditions  
Module  
• Typical motor power 15kW  
Values  
Unit  
Tterminal = 100 °C, TS = 60°C  
It(RMS)  
Tstg  
Visol  
40  
-40 ... 125  
2500  
A
°C  
V
AC, sinusoidal, t = 1 min  
GD-T  
© by SEMIKRON  
Rev. 1 – 10.06.2014  
1
SK 50 GD 12T4 Tp  
Characteristics  
Symbol Conditions  
IGBT 1  
min.  
typ.  
max.  
Unit  
IC = 50 A  
Tj = 25 °C  
VCE(sat)  
1.85  
2.20  
2.10  
2.40  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
1.1  
1.0  
15  
24  
5.8  
1.3  
1.2  
16  
24  
6.5  
0.13  
V
V
mΩ  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
chiplevel  
VGE = 15 V  
chiplevel  
SEMITOP® 4 Press-Fit  
VGE = VCE V, IC = 1.7 mA  
Tj = 25 °C  
VGE(th)  
ICES  
5
VGE = 0 V  
CE = 1200 V  
V
IGBT module  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
2.77  
0.205  
0.16  
375  
4
63  
65  
8.3  
521  
80  
VCE = 25 V  
GE = 0 V  
V
SK 50 GD 12T4 Tp  
-7V...+15V  
Tj = 25 °C  
VCC = 600 V  
Target Data  
Features  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
I
C = 50 A  
• One screw mounting module  
• Solder free mounting with Press-Fit  
terminals  
R
R
G on = 32 Ω  
G off = 32 Ω  
• Fully compatible with SEMITOP®  
Press-Fit types  
di/dton = 920 A/µs  
di/dtoff = 920 A/µs  
ns  
V
V
GE neg = -7 V  
GE pos = 15 V  
• Improved thermal performances by  
aluminium oxide substrate  
Tj = 150 °C  
Eoff  
5
mJ  
• Trench4 IGBT technology  
• CAL4F technology FWD  
• Integrated NTC temperature sensor  
• UL recognized, file no. E 63 532  
Rth(j-s)  
per IGBT  
0.65  
K/W  
Characteristics  
Symbol Conditions  
Diode 1  
VF = VEC  
min.  
typ.  
max.  
Unit  
Typical Applications*  
• Inverter up to 26kVA  
IF = 50 A  
Tj = 25 °C  
2.22  
2.18  
2.54  
2.50  
V
V
• Typical motor power 15kW  
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
rF  
1.3  
0.9  
18.4  
25.6  
30  
1.5  
1.1  
20.8  
28  
V
V
mΩ  
mΩ  
A
chiplevel  
chiplevel  
IF = 50 A  
IRRM  
Qrr  
di/dtoff = 920 A/µs  
7.2  
µC  
V
V
GE = -7 V  
CC = 600 V  
Tj = 150 °C  
Err  
2.15  
0.97  
mJ  
Rth(j-s)  
per diode  
K/W  
Characteristics  
Symbol Conditions  
Module  
min.  
typ.  
max.  
Unit  
Ms  
w
to heatsink  
weight  
2.5  
2.75  
Nm  
g
60  
Characteristics  
Symbol Conditions  
Temperature Sensor  
min.  
typ.  
max.  
Unit  
Tr = 100 °C,  
R100  
493 ± 5%  
Ω
3550  
±2%  
B100/125  
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];  
K
GD-T  
2
Rev. 1 – 10.06.2014  
© by SEMIKRON  
SK 50 GD 12T4 Tp  
Fig. 1: Typ. IGBT 1 output characteristic, inclusive RCC'+  
Fig. 2: Rated current vs. temperature IC = f (TS)  
Fig. 4: Typ. turn-on /-off energy = f (RG)  
Fig. 7: Typ. switching times vs. IC  
EE'  
Fig. 3: Typ. turn-on /-off energy = f (IC)  
Fig. 6: Typ. gate charge characteristic  
© by SEMIKRON  
Rev. 1 – 10.06.2014  
3
SK 50 GD 12T4 Tp  
Fig. 8: Typ. switching times vs. gate resistor RG  
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'  
4
Rev. 1 – 10.06.2014  
© by SEMIKRON  
SK 50 GD 12T4 Tp  
SEMITOP 4 Press-Fit  
GD-T  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.  
© by SEMIKRON  
Rev. 1 – 10.06.2014  
5

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