SK60GM123_07 [SEMIKRON]

IGBT Module; IGBT模块


型号：	SK60GM123_07
厂家：	SEMIKRON INTERNATIONAL
描述：	IGBT Module IGBT模块双极性晶体管
文件：	总4页 (文件大小：757K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SK 60 GM 123

( ) *+ ,ꢁ- ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ

Absolute Maximum Ratings

Symbol Conditions

IGBT

ꢊ

Values

Units

0*11

3 *1

ꢁ/#

2/#

(_ꢊ) *+ ꢘ41 ,ꢁ5

61 ꢘ71

0*1 ꢘ41

ꢁ

ꢇ_ꢄ: 0 ꢃꢊ5 (_ꢊ) *+ ꢘ41 ,ꢁ5

ꢁ9

(

< 71 === > 0+1

,ꢁ

;

Inverse/Freewheeling CAL diode

(_ꢊ) *+ ꢘ41 ,ꢁ5

61 ꢘ71

$_?9) < $_ꢁ9

ꢇ_ꢄ: 0 ꢃꢊ5 (_ꢊ) *+ ꢘ41 ,ꢁ5

0*1 ꢘ41

SEMITOP 2

(

< 71 === > 0+1

,ꢁ

;

(

< 71 === > 0*+

*61

,ꢁ

ꢊꢇꢌ

IGBT Module

(ꢉꢏꢃꢋꢍꢅꢔꢊ- 01 ꢊ

ꢊꢂꢔ

8ꢁ +1 ꢒ@- ꢏ=ꢃ=ꢊ= 0 ꢃꢋꢍ= A 0 ꢊ

*+11 A B111

ꢋꢊꢂꢔ

SK 60 GM 123

( ) *+ ,ꢁ- ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ

Characteristics

Symbol Conditions

IGBT

ꢊ

Target Data

min.

typ.

max. Units

$_ꢁ) +1 8- (_;) *+ ꢘ0*+ ,ꢁ

*-+ ꢘB-0

+-+

B ꢘB-C

6-+

ꢁ/ꢘꢊꢅꢇ

Features

._ꢁ/) ._2/5 $_ꢁ) 1-11* 8

7-+

2/ꢘꢇꢕ

ꢁ_ꢋꢉꢊ

._ꢁ/) *+ .5 ._2/) 1 .5 0 9ꢒ@

B-B

ꢍ?

EAF

ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ

ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ

ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ

ꢇꢕꢏꢂꢑꢌꢕ

ꢀ

D_{ꢇꢕꢘ;<ꢊ}

ꢄꢉꢏ $2ꢚ(

1-6

ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ

EAF

ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG

ꢇ_ꢈꢘꢂꢍ

ꢇ_ꢏ

ꢇ_{ꢈꢘꢂꢓꢓ}

ꢇ_ꢓ

_ꢁꢁ) 611 . - ._2/) 3 0+ .

ꢍꢊ

ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢋꢍꢌ ꢅꢔꢑꢃꢋꢍꢋꢑꢃ

ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢚꢁ

ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ!

"ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ

ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ

ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ

$_ꢁ) +1 8- (_;) 0*+ ,ꢁ

D_2ꢂꢍ) D_2ꢂꢓꢓ) 0*-+ H

B61

ꢀ

/_ꢂꢍ> /_ꢂꢓꢓ

$ꢍꢈꢑꢆꢇꢋ%ꢉ ꢔꢂꢅꢈ

0*-*

ꢃI

Inverse/Freewheeling CAL diode

._?) ._/ꢁ

$_?) +1 85 (_;) *+ ꢘ0*+ ,ꢁ

* ꢘ0-4

ꢘ0

*-+

Typical Applications

#ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ

$ꢍ%ꢉꢏꢇꢉꢏ

#ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ

&'#

(_;) ꢘ0*+ ,ꢁ

ꢘ0-*

ꢘ**

ꢘ(ꢎ

ꢏ₍

ꢘ06

ꢃH

ꢀ

D_{ꢇꢕꢘ;<ꢊ}

1-C

EAF

ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG

_?) 77 85 ._D) 611 .

ꢈ$_?Aꢈꢇ ) <+11 8AKꢊ

_2/) 1 .5 (_;) 0*+ ,ꢁ

DD9

J_ꢏꢏ

Kꢁ

ꢃI

ꢂꢓꢓ

Mechanical data

ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏMꢑꢉ

Nꢃ

ꢌ

ꢐ

ꢁꢅꢊꢉ

#/9$(ꢎ'^O

( B+

11-01-2007 DIL

SK 60 GM 123

Fig.5 Typ. output characteristic, t_p= 250 µs, 25 °C

Fig.6 Typ. output characteristic, t_p= 25 µs, 125 °C

Fig.7 Turn-on / -off energy = f (I_C)

Fig.8 Turn-on / -off energy = f (R_G)

Fig.9 Typ. gate charge characteristic

11-01-2007 DIL

SK 60 GM 123

Fig.11 Typ. switching times vs. I_C

Fig.12 Typ. switching times vs. gate resistor R_G

Fig.13 Diode turn-off energy dissipation per pulse

Fig.14 Typical FWD forward characteristic

11-01-2007 DIL

SK 60 GM 123

UL Recognized

File no. E 63532

Dimensions in mm

ꢁꢅꢊꢉ (B+

#&22/#(/ꢙ ꢒꢎ"/ꢙ$89/(/D ?ꢎD (ꢒ/ #ꢎ"ꢙ/D '$N# 8Nꢙ (ꢒ/ 9ꢎ&N($N2 '$N# $N (ꢒ/

'ꢁꢚG * ꢃꢃ

ꢁꢅꢊꢉ (B+

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee

expressed or implied is made regarding delivery, performance or suitability.

11-01-2007 DIL

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