SKCD31C120I4F [SEMIKRON]

CAL-DIODE; CAL二极管
SKCD31C120I4F
型号: SKCD31C120I4F
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

CAL-DIODE
CAL二极管

二极管
文件: 总2页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKCD 31 C 120 I4F  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.06 mA  
Tc = 80 °C, Tj = 175 °C, Fi=PI/2  
VRRM  
IF(AV)  
IFSM  
1200  
31  
270  
270  
175  
V
A
A
A
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF = 50 A  
VRRM = 1200 V  
Size: 5,60 mm x 5,60 mm  
Tj = 150 °C, sin 180°, 10 ms  
Tj = 25 °C, VRRM = 1200 V  
i²t  
IR  
365  
0.06  
8.80  
2.54  
2.50  
2.34  
1.10  
27.90  
0.98  
27.30  
A²s  
mA  
mA  
V
V
V
V
m  
V
Tj = 150 °C, VRRM = 1200 V  
Tj = 25 °C, IF = 50 A  
Tj = 150 °C, IF = 50 A  
Tj = 175 °C, IF = 50 A  
Tj = 150 °C  
Tj = 150 °C  
Tj = 175 °C  
Tj = 175 °C  
4.40  
2.22  
2.18  
2.03  
0.90  
25.6  
0.82  
24.20  
VF  
V(TO)  
rT  
V(TO)  
rT  
SKCD 31 C 120 I4F  
Features  
m  
• max. junction 175 °C  
Dynamic Characteristics  
Symbol Conditions  
• very low forward voltage drop  
• positive temperature coefficient  
• extreme soft recovery  
min.  
min.  
typ.  
max.  
Unit  
Tj = 150 °C, 50 A, 600 V, 1000 A/µs  
Tj = 150 °C, 50 A, 600 V, 1000 A/µs  
Tj = 150 °C, 50 A, 600 V, 1000 A/µs  
trr  
Err  
Irrm  
0.53  
2.6  
46  
µs  
mJ  
A
Typical Applications*  
• freewheeling diode for IGBT  
Thermal Characteristics  
Symbol Conditions  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
Rth(j-c)  
-40  
-40  
175  
175  
250  
320  
°C  
°C  
°C  
°C  
K/W  
10 min.  
5 min.  
Semitrans Assembly  
1.00  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
5.60 x 5.60  
mm2  
mm²  
31  
Anode  
Metallization  
Metallization  
bondable (Al)  
Cathode  
Wire bond  
Package  
solderable (Ag/Ni)  
Al, typ. diameter = 300 µm  
wafer frame  
Chips /  
Package  
470  
pcs  
SKCD  
© by SEMIKRON  
Rev. 0 – 16.03.2011  
1
SKCD 31 C 120 I4F  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.  
2
Rev. 0 – 16.03.2011  
© by SEMIKRON  

相关型号:

SKCD31C120IHD

SEMICELL CAL-DIODE
SEMIKRON
SEMIKRON

SKCD40C060IHD

Rectifier Diode, 1 Phase, 1 Element, 11A, 600V V(RRM), Silicon, 2 X 2 MM, WAFER-1
SEMIKRON

SKCD42C060IHD

SEMICELL CAL-DIODE
SEMIKRON
SEMIKRON

SKCD43C120I4

Rectifier Diode, 1 Phase, 1 Element, 48A, 1200V V(RRM), Silicon, 6.55 X 6.55 MM, DIE-2
SEMIKRON

SKCD46C120I4F

CAL-DIODE
SEMIKRON
SEMIKRON

SKCD46C120I4HD

Rectifier Diode, 1 Phase, 1 Element, 53A, 1200V V(RRM), Silicon, DIE-2
SEMIKRON

SKCD47C060I3

SEMICELL CAL-DIODE
SEMIKRON
SEMIKRON

SKCD47C120I

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon,
SEMIKRON