SKD116/12-L105 [SEMIKRON]
Insulated Gate Bipolar Transistor;
| 型号： | SKD116/12-L105 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总4页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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1
29-07-2011 DIL
© by SEMIKRON
SKD 116/..L105
Fig. 1 Power dissipation per module vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode
Fig. 4 Temperature sensor characteristic
Fig. 5 Typ. gate charge characteristic
Fig. 6 Output IGBT characteristics Ic=f(Vce), Tj=25°C
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29-07-2011 DIL
© by SEMIKRON
SKD 116/..L105
Fig. 7 Output IGBT characteristics Ic=f(Vce), Tj=125°C
Fig. 8 Turn-on/-off energy=f(Ic)
Fig. 9 Turn-on/-off energy=f(Rg)
Fig. 10 Diode forward characteristic
3
29-07-2011 DIL
© by SEMIKRON
SKD 116/..L105
UL recognized
Dimensions in mm
file no. E 63 532
ꢁꢅꢊꢉ ( #$
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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our staff.
4
29-07-2011 DIL
© by SEMIKRON
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