SKHI22AH4R [SEMIKRON]
Half Bridge Based Peripheral Driver, Hybrid,;
| 型号： | SKHI22AH4R |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Half Bridge Based Peripheral Driver, Hybrid, 驱动 接口集成电路 |
| 文件： | 总12页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKHI 21A (R) ...
Absolute Maximum Ratings
Symbol Conditions
Values
Units
ꢐ
ꢐꢉ
ꢉ) #* ꢄꢓ#ꢎ!+ꢅ ꢂꢃꢚ0
&ꢔ )ꢎ ꢆꢃ+ꢔ!# ꢄꢓ#ꢎ0 ꢒ%ꢃ+ꢏꢕ
ꢈ)ꢎ )ꢎ ꢅ!- ꢙ)ꢂꢂꢅꢔꢎ
ꢗ5
ꢐꢉ 8 ꢘ7/
5
ꢐꢃ%
ꢐ
&ꢓ)ꢎ9ꢋ2$
&ꢓ)ꢎ2ꢐꢚ!:
2
ꢈ)ꢎ )ꢎ !ꢄꢅꢂ!+ꢅ ꢙ)ꢂꢂꢅꢔꢎ
ꢚ!:0 ꢆꢍꢃꢎꢙꢏꢃꢔ+ ,ꢂꢅ<)ꢅꢔꢙ*
;ꢘ
ꢚ2
-%>
ꢐ
,
=ꢘ
ꢚ!:
ꢐ(ꢋ
(ꢓ##ꢅꢙꢎꢓꢂ ꢅꢚꢃꢎꢎꢅꢂ ꢄꢓ#ꢎ!+ꢅ ꢆꢅꢔꢆꢅ !ꢙꢂꢓꢆꢆ
ꢎꢏꢅ &?@ꢌ
ꢗ'ꢘꢘ
ꢁꢄ.ꢁꢎ
ꢐꢃꢆꢓ#&ꢈ
3!ꢎꢅ ꢓ, ꢂꢃꢆꢅ !ꢔꢁ ,!## ꢓ, ꢄꢓ#ꢎ!+ꢅ ꢆꢅꢙꢓꢔꢁ!ꢂ*
ꢎꢓ ꢂꢃꢚ!ꢂ* ꢆꢃꢁꢅ
=ꢘ
-ꢐ.Aꢆ
ꢐ!ꢙ
TM
&ꢆꢓ#!ꢎꢃꢓꢔ ꢎꢅꢆꢎ ꢄꢓ#ꢎ!+ꢅ
'=ꢘꢘ
SEMIDRIVER
ꢃꢔ )ꢎ B ꢓ)ꢎ )ꢎ ꢒ' ꢆꢅꢙ0 2(ꢕ
&ꢆꢓ#!ꢎꢃꢓꢔ ꢎꢅꢆꢎ ꢄꢓ#ꢎ!+ꢅ
ꢐꢃꢆꢓ#ꢗ'
ꢗ=ꢘꢘ
ꢐ
ꢓ)ꢎ )ꢎ ꢗ B ꢓ)ꢎ )ꢎ ' ꢒ' ꢆꢅꢙ0 2(ꢕ
ꢇꢃꢔꢃꢚ)ꢚ ꢂ!ꢎꢃꢔ+ ,ꢓꢂ 3?ꢓꢔ
ꢇꢃꢔꢃꢚ)ꢚ ꢂ!ꢎꢃꢔ+ ,ꢓꢂ 3?ꢓ,,
ꢇ!:0 ꢂ!ꢎꢃꢔ+ ,ꢓꢂ ꢓ)ꢎ )ꢎ ꢙꢏ!ꢂ+ꢅ ꢅꢂ )#ꢆꢅ
ꢈ ꢅꢂ!ꢎꢃꢔ+ ꢎꢅꢚ ꢅꢂ!ꢎ)ꢂꢅ
Hybrid Dual MOSFET
Driver
3?ꢓꢔꢚꢃꢔ
3?ꢓ,,ꢚꢃꢔ
Cꢓ)ꢎ. )#ꢆꢅ
ꢌꢓ
/
/
6
6
ꢗꢕ
;
A(
D(
SKHI 21A (R)
B ;ꢘ 000 8 5=
B ;ꢘ 000 8 5=
ꢌꢆꢎ+
ꢉꢎꢓꢂ!+ꢅ ꢎꢅꢚ ꢅꢂ!ꢎ)ꢂꢅ
D(
ꢌ 4 '= D(7 )ꢔ#ꢅꢆꢆ ꢓꢎꢏꢅꢂꢍꢃꢆꢅ ꢆ ꢅꢙꢃ,ꢃꢅꢁ
Characteristics
!
Features
Symbol Conditions
min.
ꢗ;7;
typ.
ꢗ=
max. Units
ꢁꢂꢃꢄꢅꢆ ꢇꢈꢉꢊꢋꢌꢆ ꢍꢃꢎꢏ
ꢐꢉ
ꢉ) #* ꢄꢓ#ꢎ!+ꢅ ꢂꢃꢚ!ꢂ* ꢆꢃꢁꢅ
ꢗ=71
ꢐ
ꢚ2
ꢚ2
ꢐ
ꢀ
ꢐ
ꢖ ꢗꢘ ꢐ
&
ꢉ) #* ꢙ)ꢂꢂꢅꢔꢎ ꢂꢃꢚ!ꢂ* ꢆꢃꢁꢅ ꢒꢔꢓ #ꢓ!ꢁꢕ
ꢉ) #* ꢙ)ꢂꢂꢅꢔꢎ ꢂꢃꢚ!ꢂ* ꢆꢃꢁꢅ ꢒꢚ!:0ꢕ
&ꢔ )ꢎ ꢆꢃ+ꢔ!# ꢄꢓ#ꢎ!+ꢅ ꢓꢔ.ꢓ,,
5ꢘ
ꢑꢉꢒꢓꢔꢕ
ꢉꢈ
'Eꢘ
ꢃꢆ ꢙꢓꢚ !ꢎꢃ"#ꢅ ꢎꢓ ꢓ#ꢁ ꢉ$%& 'ꢗ
(ꢇꢈꢉ ꢙꢓꢚ !ꢎꢃ"#ꢅ ꢃꢔ )ꢎꢆ
ꢉꢏꢓꢂꢎ ꢙꢃꢂꢙ)ꢃꢎ ꢓꢎꢅꢙꢎꢃꢓꢔ "* ꢐ
ꢀ
ꢀ
ꢀ
ꢐꢃ
ꢗ= . ꢘ
ꢐꢃꢌ8
ꢐꢃꢌB
&ꢔ )ꢎ ꢎꢏꢂꢅꢆꢏꢓ#ꢁ ꢄꢓ#ꢎ!+ꢅ ꢒ%ꢃ+ꢏꢕ
&ꢔ )ꢎ ꢎꢏꢂꢅꢆꢏꢓ#ꢁ ꢄꢓ#ꢎ!+ꢅ ꢒFꢓꢍꢕ
&ꢔ )ꢎ ꢂꢅꢆꢃꢆꢎ!ꢔꢙꢅ
ꢗ'7=
ꢐ
(ꢋ
;7=
ꢐ
ꢚꢓꢔꢃꢎꢓꢂꢃꢔ+ !ꢔꢁ ꢆꢍꢃꢎꢙꢏ ꢓ,,
ꢑꢂꢃꢄꢅ ꢃꢔꢎꢅꢂ#ꢓꢙ- ꢎꢓ . "ꢓꢎꢎꢓꢚ
&ꢆꢓ#!ꢎꢃꢓꢔ "* ꢎꢂ!ꢔꢆ,ꢓꢂꢚꢅꢂꢆ
ꢉ) #* )ꢔꢁꢅꢂꢄꢓꢎ!+ꢅ
ꢂꢓꢎꢅꢙꢎꢃꢓꢔ ꢒꢗ/ ꢐꢕ
3ꢃꢔ
ꢗꢘ
8 ꢗ=
ꢘ
-6
ꢐ
ꢀ
ꢀ
ꢀ
ꢐ?ꢒꢓꢔꢕ
ꢐ?ꢒꢓ,,ꢕ
3?ꢋ
ꢌ)ꢂꢔ ꢓꢔ +!ꢎꢅ ꢄꢓ#ꢎ!+ꢅ ꢓ)ꢎ )ꢎ
ꢌ)ꢂꢔ ꢓ,, +!ꢎꢅ ꢄꢓ#ꢎ!+ꢅ ꢓ)ꢎ )ꢎ
ꢐ
&ꢔꢎꢅꢂꢔ!# +!ꢎꢅBꢅꢚꢃꢎꢎꢅꢂ ꢂꢅꢆꢃꢆꢎ!ꢔꢙꢅ
2ꢆꢃꢙ ꢆ*ꢆꢎꢅꢚ ꢆꢍꢃꢎꢙꢏꢃꢔ+ ,ꢂꢅ<)ꢅꢔꢙ*
&ꢔ )ꢎBꢓ)ꢎ )ꢎ ꢎ)ꢂꢔBꢓꢔ ꢂꢓ !+!ꢎꢃꢓꢔ ꢎꢃꢚꢅ
&ꢔ )ꢎBꢓ)ꢎ )ꢎ ꢎ)ꢂꢔBꢓ,, ꢂꢓ !+!ꢎꢃꢓꢔ ꢎꢃꢚꢅ
ꢋꢂꢂꢓꢂ ꢃꢔ )ꢎBꢓ)ꢎ )ꢎ ꢂꢓ !+!ꢎꢃꢓꢔ ꢎꢃꢚꢅ
ꢋꢂꢂꢓꢂ ꢂꢅꢆꢅꢎ ꢎꢃꢚꢅ
''
5
-6
ꢇ%>
Aꢆ
Aꢆ
Aꢆ
Aꢆ
Aꢆ
ꢐ
,
2ꢉ&(
ꢋꢂꢂꢓꢂ #!ꢎꢙꢏ . ꢓ)ꢎ )ꢎ
ꢎꢁꢒꢓꢔꢕ&ꢈ
ꢎꢁꢒꢓ,,ꢕ&ꢈ
ꢎꢁꢒꢅꢂꢂꢕ
ꢘ75=
ꢘ75=
ꢗ
ꢗ7ꢗ=
ꢗ7ꢗ=
ꢀ
ꢗ
Typical Applications
ꢘ71
E
ꢑꢂꢃꢄꢅꢂ ,ꢓꢂ ꢇꢈꢉꢊꢋꢌ ꢚꢓꢁ)#ꢅꢆ ꢃꢔ
"ꢂꢃꢁ+ꢅ ꢙꢃꢂꢙ)ꢃꢎꢆ ꢃꢔ ꢃꢔꢁ)ꢆꢎꢂꢃ!#
! #ꢃꢙ!ꢎꢃꢓꢔꢆ
ꢎ
ꢀ
ꢋ333ꢋꢉꢋꢌ
ꢎꢌꢑ
ꢌꢓ B@ꢓꢎ &ꢔꢎꢅꢂ#ꢓꢙ- ꢑꢅ!ꢁ ꢌꢃꢚꢅ
3ꢅ,ꢅꢂꢅꢔꢙꢅ ꢄꢓ#ꢎ!+ꢅ ,ꢓꢂ ꢐ(ꢋBꢚꢓꢔꢃꢎꢓꢂꢃꢔ+
(ꢓ) #ꢃꢔ+ ꢙ! !ꢙꢃꢎ!ꢔꢙꢅ ꢂꢃꢚ!ꢂ* ꢆꢅꢙꢓꢔꢁ!ꢂ*
ꢇꢅ!ꢔ ꢌꢃꢚꢅ @ꢅꢎꢍꢅꢅꢔ ꢊ!ꢃ#)ꢂꢅ ꢌ! 4 ;ꢘD(
;7/
'ꢕ
ꢐ(ꢋꢆ!ꢎ
=
ꢗꢘ
(
ꢗ'
ꢊ
ꢗꢘ1 ꢏ
ꢆ
1)
ꢆꢅꢅ ,ꢃ+0 1
ꢇꢌ@ꢊ
ꢍ
'7ꢘ
2)
2ꢎ 3(ꢋ 4 ꢗ5 -67 ((ꢋ 4 //ꢘ ꢊ
ꢍꢅꢃ+ꢏꢎ
;=
+
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
1
30-09-2008 MHW
© by SEMIKRON
SKHI 22 A / B (R) ...
Absolute Maximum Ratings
Symbol Conditions
Values
-4
Units
'
'
ꢕꢃ!!ꢅ# ꢊꢂꢅ"ꢍꢎꢆ !ꢈꢉꢓ0
ꢏꢚ!ꢃ" ꢔꢉꢎꢚꢍꢅ ꢊꢂꢅ"0 ,ꢗꢉꢎꢌ/ ꢕꢖꢗꢏ ꢘꢘꢙ
ꢕꢖꢗꢏ ꢘꢘꢑ
ꢕ
'
'ꢕ 9 76.
'
ꢉꢗ
: 9 76.
4
'
ꢏꢂꢃ";(ꢙꢖ
ꢏꢂꢃ"ꢙ'ꢓꢍ<
ꢋꢓꢍ<
&ꢃ"!ꢃ" !ꢆꢍ* ꢃꢈꢈꢆꢚ"
ꢙ
&ꢃ"!ꢃ" ꢍꢊꢆꢈꢍꢎꢆ ꢃꢈꢈꢆꢚ"
ꢓꢍ<0 ꢔ)ꢉ" ꢌꢉꢚꢎ ꢋꢈꢆ>ꢃꢆꢚ #
=7
ꢓꢙ
*ꢗ?
'
:7
'
$ꢂꢅꢅꢆ "ꢂꢈ ꢆꢓꢉ""ꢆꢈ ꢊꢂꢅ"ꢍꢎꢆ ꢔꢆꢚꢔꢆ ꢍ ꢈꢂꢔꢔ
"ꢌꢆ ꢏꢐꢑꢒ
-ꢘ77
$(
ꢇꢊ+ꢇ"
2ꢍ"ꢆ ꢂꢋ ꢈꢉꢔꢆ ꢍꢚꢇ ꢋꢍꢅꢅ ꢂꢋ ꢊꢂꢅ"ꢍꢎꢆ ꢔꢆ ꢂꢚꢇꢍꢈ#
"ꢂ !ꢈꢉꢓꢍꢈ# ꢔꢉꢇꢆ
:7
*'+@ꢔ
'ꢍ
TM
SEMIDRIVER
'
ꢏꢔꢂꢅꢍ"ꢉꢂꢚ "ꢆꢔ" ꢊꢂꢅ"ꢍꢎꢆ
ꢘ:77
ꢉꢔꢂꢅꢏ&
ꢉꢚ!ꢃ" A ꢂꢃ"!ꢃ" ,ꢘ ꢔꢆ 0 ꢙ$/
ꢏꢔꢂꢅꢍ"ꢉꢂꢚ "ꢆꢔ" ꢊꢂꢅ"ꢍꢎꢆ
'
-:77
'
Hybrid Dual IGBT Driver
ꢉꢔꢂꢅ-ꢘ
ꢂꢃ"!ꢃ" - A ꢂꢃ"!ꢃ" ꢘ ,ꢘ ꢔꢆ 0 ꢙ$/
%ꢉꢚꢉꢓꢃꢓ ꢈꢍ"ꢉꢚꢎ ꢋꢂꢈ 2ꢐꢂꢚ
%ꢉꢚꢉꢓꢃꢓ ꢈꢍ"ꢉꢚꢎ ꢋꢂꢈ 2ꢐꢂꢋꢋ
%ꢍ<0 ꢈꢍ"ꢉꢚꢎ ꢋꢂꢈ ꢂꢃ"!ꢃ" ꢌꢍꢈꢎꢆ !ꢆꢈ !ꢃꢅꢔꢆ
&!ꢆꢈꢍ"ꢉꢚꢎ "ꢆꢓ!ꢆꢈꢍ"ꢃꢈꢆ
2ꢐꢂꢚꢓꢉꢚ
2ꢐꢂꢋꢋꢓꢉꢚ
Bꢂꢃ"+!ꢃꢅꢔꢆ
ꢒꢂ!
.
.
5
5
-/
SKHI 22 A / B (R)
=
@$
C$
A =7 000 9 4:
A =7 000 9 4:
ꢒꢔ"ꢎ
ꢕ"ꢂꢈꢍꢎꢆ "ꢆꢓ!ꢆꢈꢍ"ꢃꢈꢆ
C$
ꢒ 3 ꢘ: C$6 ꢃꢚꢅꢆꢔꢔ ꢂ"ꢌꢆꢈ)ꢉꢔꢆ ꢔ!ꢆ ꢉꢋꢉꢆꢇ
Features
Characteristics
ꢍ
ꢁꢂꢃꢄꢅꢆ ꢇꢈꢉꢊꢆꢈ ꢋꢂꢈ ꢌꢍꢅꢋꢄꢈꢉꢇꢎꢆ
ꢏꢐꢑꢒ ꢓꢂꢇꢃꢅꢆꢔ
ꢕꢖꢗꢏ ꢘꢘꢙ ꢉꢔ ꢂꢓ!ꢍ"ꢉꢄꢅꢆ "ꢂ
ꢂꢅꢇ ꢕꢖꢗꢏ ꢘꢘ
ꢕꢖꢗꢏ ꢘꢘꢑ ꢌꢍꢔ ꢍꢇꢇꢉ"ꢉꢂꢚꢍꢅ
ꢋꢃꢚ "ꢉꢂꢚꢍꢅꢉ"#
$%&ꢕ ꢂꢓ!ꢍ"ꢉꢄꢅꢆ ꢉꢚ!ꢃ"ꢔ
Symbol Conditions
min.
-=6=
typ.
-:
max. Units
ꢀ
'
ꢕꢃ!!ꢅ# ꢊꢂꢅ"ꢍꢎꢆ !ꢈꢉꢓꢍꢈ# ꢔꢉꢇꢆ
-:61
'
ꢓꢙ
ꢓꢙ
'
ꢕ
ꢏꢕ&
ꢕꢃ!!ꢅ# ꢃꢈꢈꢆꢚ" !ꢈꢉꢓꢍꢈ# ꢔꢉꢇꢆ ,ꢚꢂ ꢅꢂꢍꢇ/
ꢕꢃ!!ꢅ# ꢃꢈꢈꢆꢚ" !ꢈꢉꢓꢍꢈ# ꢔꢉꢇꢆ ,ꢓꢍ<0/
ꢏꢚ!ꢃ" ꢔꢉꢎꢚꢍꢅ ꢊꢂꢅ"ꢍꢎꢆ ꢕꢖꢗꢏ ꢘꢘꢙ ꢂꢚ+ꢂꢋꢋ
ꢕꢖꢗꢏ ꢘꢘꢑ ꢂꢚ+ꢂꢋꢋ
47
ꢀ
ꢘD7
'
-: + 7
: + 7
ꢉ
ꢀ
'
'
ꢏꢚ!ꢃ" "ꢌꢈꢆꢔꢌꢂꢅꢇ ꢊꢂꢅ"ꢍꢎꢆ ,ꢗꢉꢎꢌ/ ꢕꢖꢗꢏ ꢘꢘꢙ
ꢕꢖꢗꢏ ꢘꢘꢑ
-ꢘ6:
.6D
'
ꢉꢒ9
ꢀ
ꢀ
'
ꢕꢌꢂꢈ" ꢉꢈ ꢃꢉ" !ꢂ"ꢆ "ꢉꢂꢚ ꢄ# '
$(
'
ꢏꢚ!ꢃ" "ꢌꢈꢆꢔꢌꢂꢅꢇ ꢊꢂꢅ"ꢍꢎꢆ ,Eꢂ)/ ꢕꢖꢗꢏ ꢘꢘꢙ
ꢕꢖꢗꢏ ꢘꢘꢑ
=6:
-6:
'
ꢉꢒA
ꢓꢂꢚꢉ"ꢂꢈꢉꢚꢎ ꢍꢚꢇ ꢔ)ꢉ" ꢌ ꢂꢋꢋ
'
ꢁꢈꢉꢊꢆ ꢉꢚ"ꢆꢈꢅꢂ * "ꢂ! + ꢄꢂ""ꢂꢓ
ꢏꢔꢂꢅꢍ"ꢉꢂꢚ ꢄ# "ꢈꢍꢚꢔꢋꢂꢈꢓꢆꢈꢔ
ꢕꢃ!!ꢅ# ꢃꢚꢇꢆꢈꢊꢂ"ꢍꢎꢆ
!ꢈꢂ"ꢆ "ꢉꢂꢚ ,-. '/
ꢀ
ꢀ
ꢀ
2ꢉꢚ
'
ꢏꢚ!ꢃ" ꢈꢆꢔꢉꢔ"ꢍꢚ ꢆ ꢕꢖꢗꢏ ꢘꢘꢙ
-7
.6.
9 -:
A F
ꢘꢘ
4
*5
*5
'
ꢕꢖꢗꢏ ꢘꢘꢑ
ꢒꢃꢈꢚ ꢂꢚ ꢎꢍ"ꢆ ꢊꢂꢅ"ꢍꢎꢆ ꢂꢃ"!ꢃ"
ꢒꢃꢈꢚ ꢂꢋꢋ ꢎꢍ"ꢆ ꢊꢂꢅ"ꢍꢎꢆ ꢂꢃ"!ꢃ"
ꢏꢚ"ꢆꢈꢚꢍꢅ ꢎꢍ"ꢆAꢆꢓꢉ""ꢆꢈ ꢈꢆꢔꢉꢔ"ꢍꢚ ꢆ
ꢙꢔꢉ ꢔ#ꢔ"ꢆꢓ ꢔ)ꢉ" ꢌꢉꢚꢎ ꢋꢈꢆ>ꢃꢆꢚ #
ꢏꢚ!ꢃ"Aꢂꢃ"!ꢃ" "ꢃꢈꢚAꢂꢚ !ꢈꢂ!ꢍꢎꢍ"ꢉꢂꢚ "ꢉꢓꢆ
ꢏꢚ!ꢃ"Aꢂꢃ"!ꢃ" "ꢃꢈꢚAꢂꢋꢋ !ꢈꢂ!ꢍꢎꢍ"ꢉꢂꢚ "ꢉꢓꢆ
(ꢈꢈꢂꢈ ꢉꢚ!ꢃ"Aꢂꢃ"!ꢃ" !ꢈꢂ!ꢍꢎꢍ"ꢉꢂꢚ "ꢉꢓꢆ
(ꢈꢈꢂꢈ ꢈꢆꢔꢆ" "ꢉꢓꢆ
ꢐ,ꢂꢚ/
'
'
ꢐ,ꢂꢋꢋ/
2ꢐ(
*5
%ꢗ?
@ꢔ
@ꢔ
@ꢔ
@ꢔ
@ꢔ
@ꢔ
'
(ꢈꢈꢂꢈ ꢅꢍ" ꢌ + ꢂꢃ"!ꢃ"
ꢀ
ꢋꢙꢕꢏ$
Typical Applications
ꢁꢈꢉꢊꢆꢈ ꢋꢂꢈ ꢏꢐꢑꢒ ꢓꢂꢇꢃꢅꢆꢔ ꢉꢚ ꢄꢈꢉꢇꢎꢆ
ꢉꢈ ꢃꢉ"ꢔ ꢉꢚ ꢉꢚꢇꢃꢔ"ꢈꢉꢍꢅ ꢍ!!ꢅꢉ ꢍ"ꢉꢂꢚꢔ
"
764:
764:
-
-6-:
-6-:
ꢇ,ꢂꢚ/ꢏ&
"
-
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This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
1
30-09-2008 MHW
© by SEMIKRON
SKHI 22 A / B H4 (R) ...
Absolute Maximum Ratings
Symbol Conditions
Values
.:
Units
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This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
1
30-09-2008 MHW
© by SEMIKRON
External Components
Component
RCE
Function
Reference voltage for VCE-monitoring
10 ⋅ RCE(kΩ)
Recommended Value
10kΩ < RCE < 100kΩ
-----------------------------------
VCEstat(V) =
– 1,4
(1)
18kΩ for SKM XX 123 (1200V)
36kΩ for SKM XX 173 (1700V)
10 + RCE(kΩ)
with RVCE = 1kΩ (1700V IGBT):
10 ⋅ RCE(kΩ)
-----------------------------------
VCEstat(V) =
– 1,8
(1.1)
10 + RCE(kΩ)
CCE
CCE < 2,7nF
Inhibit time for VCE - monitoring
15 – VCEstat(V)
0,33nF for SKM XX 123 (1200V)
0,47nF for SKM XX 173 (1700V)
---------------------------------------
tmin = τCE ⋅ ln
(2)
(3)
10 – VCEstat(V)
0,5μs < tmin < 10μs
10 ⋅ RCE(kΩ)
-----------------------------------
τCE(μs) = CCE(nF) ⋅
10 + RCE(kΩ)
RVCE
Collector series resistance for 1700V
IGBT-operation
1kΩ / 0,4W
RERROR
Pull-up resistance at error output
1kΩ < RERROR < 10kΩ
UPull – Up
-----------------------
< 15mA
RERROR
RGON
Turn-on speed of the IGBT 4)
Turn-off speed of the IGBT 5)
RGON > 3Ω
RGOFF > 3Ω
RGOFF
4) Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.
5) Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation
© by SEMIKRON 30-09-2008
Driver Electronic – PCB Drivers
2
PIN array
Fig. 2 shows the pin arrays. The input side (primary side) comprises 10 inputs (SKHI 22A / 21A 8 inputs), forming the
interface to the control circuit (see fig.1).
The output side (secondary side) of the hybrid driver shows two symmetrical groups of pins with 4 outputs, each forming
the interface to the power module. All pins are designed for a grid of 2,54 mm.
Primary side PIN array
PIN No. Designation Explanation
P14
P13
P12
GND / 0V
VS
related earth connection for input signals
+ 15V ± 4% voltage supply
VIN1
switching signal input 1 (TOP switch)
positive 5V logic (for SKHI22A /21A, 15V logic)
P11
P10
free
not wired
/ERROR
error output, low = error; open collector output; max 30V / 15mA
(for SKHI22A /21A, internal 10kΩ pull-up resistor versus VS)
P9
P8
TDT2
VIN2
signal input for digital adjustment of interlocking time;
SKHI22B: to be switched by bridge to GND (see fig. 3)
SKHI22A /21A: to be switched by bridge to VS
switching signal input 2 (BOTTOM switch);
positive 5V logic (for SKHI22A /21A, 15V logic)
P7
P6
GND / 0V
SELECT
related earth connection for input signals
signal input for neutralizing locking function;
to be switched by bridge to GND
P5
TDT1
signal input for digital adjustment of locking time;
to be switched by bridge to GND
ATTENTION: Inputs P6 and P5 are not existing for SKHI 22A/ 21A. The contactor tracks of the digital input signals P5/
P6/ P9 must not be longer than 20 mm to avoid interferences, if no bridges are connected.
Secondary side PIN array
PIN No. Designation Explanation
S20
S15
S14
S13
S12
S1
VCE1
CCE1
GON1
GOFF1
E1
collector output IGBT 1 (TOP switch)
reference voltage adjustment with RCE and CCE
gate 1 RON output
gate 1 ROFF output
emitter output IGBT 1 (TOP switch)
collector output IGBT 2 (BOTTOM switch)
reference voltage adjustment with RCE and CCE
gate 2 RON output
VCE2
CCE2
GON2
GOFF2
E2
S6
S7
S8
gate 2 ROFF output
S9
emitter output IGBT 2 (BOTTOM switch)
ATTENTION: The connector leads to the power module should be as short as possible.
3
Driver Electronic – PCB Drivers
30-09-2008
© by SEMIKRON
© by SEMIKRON 30-09-2008
Driver Electronic – PCB Drivers
4
VCE
OUT1
CCE
GON
GND/0V
VS
GOFF
V
E
IN1
ERROR
TDT2
E
V
GOFF
IN2
GON
CCE
GND/0V
SELECT
TDT1
OUT2
VCE
55
±0.2
detail "A" on scale 10 : 1
0.25x0.5
50.8
±0.3
measured from pin-centre to pin-centre
A
18.25
15.75
S1
P5
P6
S6
S9
S12
S15
P13
P14
A
A
S20
Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A)
5
Driver Electronic – PCB Drivers
30-09-2008
© by SEMIKRON
SEMIDRIVERTM
The driver is connected to a controlled + 15 V-supply
voltage. The input signal level is 0/15 V for the SKHI 22A/
21A and 0/5 V for the SKHI 22B.
SKHI 22A / 22B und SKHI 21A
In the following explanations the whole driver family will be
designated as SKHI 22B. If a special type is referred to,
the concerned driver version will explicitly be named.
Hybrid dual drivers
The driver generation SKHI 22A/B and SKHI 21A will
replace the hybrid drivers SKHI 21/22 and is suitable for all
available low and medium power range IGBT and
MOSFETs.
Technical explanations1
Description of the circuit block diagram and the
functions of the driver
The SKHI 22A (SKHI 21A) is a form-, fit- and mostly
function-compatible replacement to its predecessor, the
SKHI 22 (SKHI 21).
The block diagram (fig.1) shows the inputs of the driver
(primary side) on the left side and the outputs (secondary
side) on the right.
The SKHI 22B is recommended for any new development.
It has two additional signal pins on the primary side with
which further functions may be utilized.
The following functions are allocated to the primary
side:
The SKHI 22A and SKHI 22B are available with standard
isolation (isolation testing voltage 2500 VAC, 2sec.) as
well as with an increased isolation voltage (type "H4")
(isolation testing voltage 4000 VAC, 2sec.). The SKHI 21A
is only offered with standard isolation features.
Input-Schmitt-trigger, CMOS compatible, positive logic
(input high = IGBT on)
Interlock circuit and deadtime generation of the IGBT
If one IGBT is turned on, the other IGBT of a halfbridge
cannot be switched. Additionally, a digitally adjustable
interlocking time is generated by the driver (see fig. 3),
which has to be longer than the turn-off delay time of the
IGBT. This is to avoid that one IGBT is turned on before
the other one is not completely discharged. This
protec-tion-function may be neutralized by switching the
select input (pin6) (see fig. 3). fig. 3 documents possible
interlock-times. "High" value can be achieved with no
connection and connection to 5 V as well.
Differences SKHI 22-22A (SKHI 21-21A)
Compared to the old SKHI 22/21 the new driver
SKHI 22A / 21A is absolutely compatible with regards to
pins and mostly with regards to functions. It may be
equivalently used in existing PCBs.
The following points have to be considered when
exchanging the drivers:
• Leave out the two resistors RTD for interlocking
dead time adjustment at pin 11 and pin 9.
P6 ;
P5 ;
P9 ;
interlock time
• The interlocking time of the driver stages in
halfbridge applications is adjusted to 3,25 µs. It may
be increased up to 4,25 µs by applying a 15 V (VS)
supply voltage at Pin 9 (TDT2) (wire bridge)
SELECT
TDT1
TDT2
t
TD /μs
open / 5V
open / 5V
open / 5V
open / 5V
GND
GND
GND
GND
open / 5V
GND
1,3
2,3
open / 5V
open / 5V
X
3,3
• The error reset time is typically 9µs.
open / 5V
X
4,3
• The input resistance is 10 kΩ.
no interlock
Fig. 3 SKHI 22B - Selection of interlock-times:
„High“-level can be achieved by no connection or
connecting to 5 V
As far as the SKHI 22A is concerned, the negative gate
voltage required for turn-off of the IGBT is no longer -15V,
but -7V.
Short pulse suppression
General description
The integrated short pulse suppression avoids very short
switching pulses at the power semiconductor caused by
high-frequency interference pulses at the driver input
signals. Switching pulses shorter than 500 ns are
suppressed and not transmitted to the IGBT.
The new driver generation SKHI 22A/B, SKHI 21A
consists of a hybrid component which may directly be
mounted to the PCB.
All devices necessary for driving, voltage supply, error
monitoring and potential separation are integrated in the
driver. In order to adapt the driver to the used power
module, only very few additional wiring may be necessary.
Power supply monitoring (VS)
A controlled 15 V-supply voltage is applied to the driver. If
it falls below 13 V, an error is monitored and the error
output signal switches to low level.
The forward voltage of the IGBT is detected by an
integrated short-circuit protection, which will turn off the
module when a certain threshold is exceeded.
1.The following descriptions apply to the use of the hybrid
driver for IGBTs as well as for power MOSFETs. For the
reason of shortness, only IGBTs will be mentioned in the
following. The designations "collector" and "emitter" will refer
to IGBTs, whereas for the MOSFETs "drain" and "source" are
to be read instead.
In case of short-circuit or too low supply voltage the
integrated error memory is set and an error signal is
generated.
© by SEMIKRON 30-09-2008
Driver Electronic – PCB Drivers
6
Error monitoring and error memory
IGBT is turned off. VCEstat is the steady-state value of VCEref
and is adjusted to the required maximum value for each
IGBT by an external resistor RCE to be connected between
the terminals CCE (S6/S15) and E (S9/S12). It may not
exceed 10 V. The time constant for the delay of VCEref may
be increased by an external capacitor CCE, which is
connected in parallel to RCE. It controls the time tmin which
passes after turn-on of the IGBT before the
The error memory is set in case of under-voltage or
short-circuit of the IGBTs. In case of short-circuit, an error
signal is transmitted by the VCE-input via the pulse
transformers to the error memory. The error memory will
lock all switching pulses to the IGBTs and trigger the error
output (P10) of the driver. The error output consists of an
open collector transistor, which directs the signal to earth
in case of error. SEMIKRON recommends the user to
provide for a pull-up resistor directly connected to the error
evaluation board and to adapt the error level to the desired
signal voltage this way. The open collector transistor may
be connected to max. 30 V / 15 mA. If several SKHI 22Bs
V
CE-monitoring is activated. This makes possible any
adaptation to the switching behavior of any of the IGBTs.
After tmin has passed, the VCE-monitoring will be triggered
as soon as VCE > VCEref and will turn off the IGBT.
are used in one device, the error terminals may also be External components and possible adjust-
paralleled.
ments of the hybrid driver
ATTENTION: Only the SKHI 22A / 21A is equipped with
Fig. 1 shows the required external components for
an internal pull-up resistor of 10 kΩ versus VS. The
adjustment and adaptation to the power module.
SKHI 22B does not contain an internal pull-up resistor.
VCE - monitoring adjustment
The error memory may only be reset, if no error is pending
The external components RCE and CCE are applied for
adjusting the steady-state threshold and the short-circuit
monitoring dynamic. RCE and CCE are connected in
parallel to the terminals CCE (S15/ S6) and E (S12/ S9) .
and both cycle signal inputs are set to low for > 9 μs at the
same time.
Pulse transformer set
8
7
6
The transformer set consists of two pulse transformers
one is used bidirectional for turn-on and turn-off signals of
the IGBT and the error feedback between primary and
secondary side, the other one for the DC/DC-converter.
The DC/DC-converter serves as potential-separation and
power supply for the two secondary sides of the driver.
The isolation voltage for the "H4"-type is 4000 VAC and
2500 VAC for all other types.
1200V (min)
1200V (typ)
1200V (max)
1700V (min)
1700V (typ)
1700V (max)
5
4
3
2
1
0
The secondary side consists of two symmetrical
driver switches integrating the following components:
10
20
30
40
50
RCE / kOhm
Supply voltage
Fig. 4 VCEstat in dependence of RCE (Tamb = 25°C)
The voltage supply consists of a rectifier, a capacitor, a
voltage controller for - 7 V and + 15 V and a + 10 V
reference voltage.
Dimensioning of RCE and CCE can be done in three steps:
Gate driver
1. Calculate the maximum forward voltage from the
datasheet of the used IGBT and determine VCEstat
The output transistors of the power drivers are MOSFETs.
The sources of the MOSFETs are separately connected to
external terminals in order to provide setting of the turn-on 2. Calculate approximate value of RCE according to
and turn-off speed by the external resistors RON and ROFF
.
equation (1) or (1.1) from VCEstat or determine RCE by
using fig.4.
Do not connect the terminals S7 with S8 and S13 with
S14, respectively. The IGBT is turned on by the driver at +
15 V by RON and turned off at - 7 V by ROFF. RON and ROFF
may not chosen below 3 Ω. In order to ensure locking of
the IGBT even when the driver supply voltage is turned off,
a 22 kΩ-resistor versus the emitter output (E) has been
3. Determine tmin and calculate CCE according to
equations (2) and (3).
Typical values are
integrated at output GOFF
CE-monitoring
The VCE-monitoring controls the collector-emitter voltage
.
for 1200 V IGBT:
V
CEstat = 5 V; tmin = 1,45 μs,
CE = 18 kΩ, CCE = 330 pF
CEstat = 6 V; tmin = 3 μs,
CE = 36 kΩ, CCE = 470 pF
Adaptation to 1700 V IGBT
V
R
for 1700 V IGBT:
V
V
CE of the IGBT during its on-state. VCE is internally limited
R
to 10 V. If the reference voltage VCEref is exceeded, the
IGBT will be switched off and an error is indicated. The
reference voltage VCEref may dynamically be adapted to
the IGBTs switching behaviour. Immediately after turn-on When using 1700 V IGBTs it is necessary to connect a
of the IGBT, a higher value is effective than in the steady 1 kΩ / 0,4 W adaptation resistor between the VCE-terminal
state. This value will, however, be reset, when the
(S20/ S1) and the respective collector.
7
Driver Electronic – PCB Drivers
30-09-2008
© by SEMIKRON
Adaptation to error signal level
SEMIKRON recommends to start-up operation using the
values recommended by SEMIKRON and to optimize the
values gradually according to the IGBT switching
behaviour and overvoltage peaks within the specific
circuitry.
An open collector transistor is used as error terminal,
which, in case of error, leads the signal to earth. The signal
has to be adapted to the evaluation circuit's voltage level
by means of an externally connected pull-up resistor. The
maximum load applied to the transistor shall be 30 V / 15
mA.
Driver performance and application limits
The drivers are designed for application with halfbridges
and single modules with a maximum gate charge QGE
<
As for the SKHI 22A / 21A a 10 kΩ pull-up resistor versus
VS (P13) has already been integrated in the driver.
4
μC (see fig. 6).
The charge necessary to switch the IGBT is mainly
depending on the IGBT's chip size, the DC-link voltage
and the gate voltage.
IGBT switching speed adjustment
The IGBT switching speed may be adjusted by the
resistors RON and ROFF. By increasing RON the turn-on
speed will decrease. The reverse peak current of the
This correlation is also shown in the corresponding
module datasheet curves.
free-wheeling
diode
will
diminish.
SEMIKRON
recommends to adjust RON to a level that will keep the
It should, however, be considered that the SKHI 22B is
turned on at + 15 V and turned off at - 7 V. Therefore, the
gate voltage will change by 22 V during every switching
procedure.
turn-on delay time td(on) of the IGBT < 1 μs.
By increasing ROFF the turn-off speed of the IGBT will
decrease. The inductive peak overvoltage during turn-off
will diminish.
Unfortunately, most datasheets do not indicate negative
gate voltages. In order to determine the required charge,
the upper leg of the charge curve may be prolonged to
The minimum gate resistor value for ROFF and RON is 3 Ω.
Typical values for RON and ROFF recommended by
SEMIKRON are given in fig. 5
+
22 V for determination of approximate charge per
switch.
RGon RGoff
CCE
pF
RCE
kΩ
RVCE
kΩ
The medium output current of the driver is determined by
the switching frequency and the gate charge. For the SKHI
22B the maximum medium output current is IoutAVmax < ±
40 mA.
SK-IGBT-Modul
Ω
22
22
15
12
12
10
8,2
6,8
Ω
22
22
15
12
12
10
8,2
6,8
SKM 50GB123D
SKM 75GB123D
SKM 100GB123D
SKM 145GB123D
SKM 150GB123D
SKM 200GB123D
SKM 300GB123D
SKM 400GA123D
330
330
330
330
330
330
330
330
18
18
18
18
18
18
18
18
0
0
0
0
0
0
0
0
The maximum switching frequency fMAX may be calculated
with the following formula, the maximum value however
being 50 kHz due to switching reasons:
4 ⋅ 104
QGE(nC)
----------------------
fMAX(kHz) =
Fig. 6 shows the maximum rating for the output charge per
pulse for different gate resistors.
SKM 75GB173D
SKM 100GB173D
SKM 150GB173D
SKM 200GB173D
15
12
10
8,2
15
12
10
8,2
470
470
470
470
36
36
36
36
1
1
1
1
SKHI 22 A/B maximum rating for output charge per
pulse
4,50
4,00
3,50
Rg=24 OHM; 3,86µC
Fig. 5 Typical values for external components
3,00
Rg=18 OHM; 3,52µC
2,50
Rg=12 OHM; 3,07µC
Rg=6 OHM, 2,50µC
Rg=3 OHM, 2,18µC
Interlocking time adjustment
2,00
1,50
1,00
0,50
0,00
Fig. 3 shows the possible interlocking times between
output1 and output2. Interlocking times are adjusted by
connecting the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) either to earth/ GND (P7 and P14)
according to the required function or by leaving them
open.
0
10
20
30
40
50
60
f / kHz
Fig. 6 Maximum rating for output charge per pulse
Further application notes
A typical interlocking time value is 3,25 μs (P9 = GND; P5
and P6 open). For SKHI 22A / 21A the terminals TDT1
(P5) and SELECT (P6) are not existing. The interlocking
time has been fixed to 3,25 μs and may only be increased
to 4,25 μs by connecting TDT2 (P9) to VS (P13).
The CMOS-inputs of the hybrid driver are extremely
sensitive to over-voltage. Voltages higher than VS
+
0,3 V or below – 0,3 V may destroy these inputs.
Therefore, control signal over-voltages exceeding the
above values have to be avoided.
ATTENTION: If the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) are not connected, eventually connected Please provide for static discharge protection during
track on PC-board may not be longer than 20 mm in order handling. As long as the hybrid driver is not completely
to avoid interferences.
assembled, the input terminals have to be short-circuited.
© by SEMIKRON 30-09-2008
Driver Electronic – PCB Drivers
8
If a PCB is directly plugged to IGBT modules, the PCB has
to be fixed to the heat sink by thread bolts.
Persons working with CMOS-devices have to wear a
grounded bracelet. Any synthetic floor coverings must not
be statically chargeable. Even during transportation the
input terminals have to be short-circuited using, for
example, conductive rubber. Worktables have to be
grounded. The same safety requirements apply to
MOSFET- and IGBT-modules!
The temperature of the solder must not exceed 265°C,
and solder time must not exceed 4 seconds. The ambient
temperature must not exceed the specified maximum
storage temperature of the driver.
The driver is not suited for hot air reflow or infrared reflow
soldering processes.
The connecting leads between hybrid driver and the
power module should be as short as possible, the driver
leads should be twisted.
Storage hints
Any parasitic inductances within the DC-link have to be
minimized. Over-voltages may be absorbed by C- or
RCD-snubbers between the main terminals for PLUS and
MINUS of the power module.
- Store driver only in original packaging.
- Avoid contamination of driver's surface during storage,
handling and processing.
- Please use the driver within one year after driver
manufacturing date. The manufacturing date is marked on
the driver. Usage of the driver beyond this shelf life could
compromise product long term reliability.
- Further storage conditions are indicated in the data
sheet
When first operating
a
newly developed circuit,
SEMIKRON recommends to apply low collector voltage
and load current in the beginning and to increase these
values gradually, observing the turn-off behaviour of the
free-wheeling diode and the turn-off voltage spikes
generated accross the IGBT. An oscillographic control will
be necessary. In addition to that the case temperature of
the module has to be monitored. When the circuit works
correctly under rated operation conditions, short-circuit
testing may be done, starting again with low collector
voltage.
Environmental conditions
The driver is type tested under the environmental
conditions below.
It is important to feed any errors back to the control circuit
and to switch off the device immediately in such events.
Repeated turn-on of the IGBT into a short circuit with a
high frequency may destroy the device.
Thermal cycling test:
- 100 cycle -40°C … +85°C
Mechanical fixing on PCB:
In applications with mechanical vibrations do not use a
ty-rap for fixing the driver, but - after soldering and testing
- apply special glue. Recommended types: CIBA GEIGY
XP 5090 + 5091; PACTAN 5011; WACKER A33 (ivory) or
N199 (transparent), applied around the case edge (forms
a concave mould). The housing may not be pressed on the
PCB; do not twist the PCB with the driver soldered on,
otherwise the internal ceramics may crack. The driver is
not suitable for big PCBs.
Vibration test according DIN IEC 68-2-6:
- Sinusoidal sweep: 10 Hz … 100 Hz
-1 Octave / min.
-Acceleration: 1,5 g
-Axes: 3 (x, y, z)
-26 sweeps per axis
-Driver soldered on board SKPC 2006 (L x B x H = 97,0
x 67,5 x 1,5mm)
-Driver stuck with glue on printed circuit board (see
application notes)
Proven, within the scope of the product qualification, was
the use of the driver with the printed circuit board
SKPC 2006 ( L x B x H = 97,0 x 67,5 x 1,5 mm). During the
test, the driver was stuck with glue on the printed circuit
board. Based on this information the technical conclusion
arises, that in an application with big printed circuit boards,
this board must be supported and reinforced in the area of
the driver.
Shock test according DIN IEC 68-2-27:
- Half-sinusoidal pulse
-Peak acceleration: 5 g
-Shock width: 18ms
-3 shocks in each direction (±x, ±y und ±z)
-18 shocks in total
-Driver soldered on board SKPC 2006 (L x B x H = 97,0
x 67,5 x 1,5mm)
-Driver stuck with glue on printed circuit board (see
application notes)
9
Driver Electronic – PCB Drivers
30-09-2008
© by SEMIKRON
Temperature humidity according IEC 60068-1 (climate):
- 40/085/56 (40°C, 85% RH, 56h)
- No condensation, no dripping water, non- corrosive
Climate class 3K3
All electrical and mechanical parameters should be
validated by user´s technical experts for each application.
For further details please contact SEMIKRON.
This technical information specifies devices but promises no characteristics. No warranty or guarantee expressed or implied is made
regarding delivery, performance or suitability.
© by SEMIKRON 30-09-2008
Driver Electronic – PCB Drivers
10
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