SKHI22B [SEMIKRON]
Half Bridge Based Peripheral Driver, Hybrid,;
| 型号： | SKHI22B |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Half Bridge Based Peripheral Driver, Hybrid, 驱动 接口集成电路 |
| 文件： | 总9页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKHI 21 A, SKHI 22 A / B
SEMIDRIVER®
Hybrid Dual IGBT Driver
SKHI 22 A / B
• Double driver for halfbridge
IGBT modules
• SKHI 22 A/B H4 is for 1700
V-IGBT
• SKHI 22 A is compatible to
old SKHI 22
• SKHI 22 B has additional
functionality
Absolute Maximum Ratings
Symbol Term
Values
Units
V
V
V
A
mA
kHz
V
VS
Supply voltage prim.
18
VS + 0,3
5 + 0,3
8
40
50
1700
ViH
Input signal volt. (High)
SKHIxxA
SKHI22B
IoutPEAK Output peak current
IoutAVmax Output average current
fmax
VCE
max. switching frequency
Collector emitter voltage sense across the
IGBT
dv/dt
VisolIO
Visol12
Rate of rise and fall of voltage secondary
to primary side
50
kV/µs
Isolation test voltage
Standard
2500
4000
1500
Vac
Vac
V
Hybrid Dual MOSFET
Driver
SKHI 21 A
• drives MOSFETs with
VDS(on) < 10 V
input-output (2 sec.AC)
Version „H4"
Isolation test voltage ouput 1 - output 2
(2 sec.AC)
RGonmin
RGoffmin
Minimum rating for RGon
Minimum rating for RGoff
3
3
Ω
Ω
µC
°C
°C
Qout/pulse Max. rating for output charge per pulse
4 1)
• is compatible to old SKHI 21
Top
Tstg
Operating temperature
Storage temperature
- 40... + 85
- 40... + 85
Preliminary Data
Electrical Characteristics (Ta = 25 °C)
Symbol Term
Values
typ. max. Units
min.
VS
ISO
Supply voltage primary side
Supply current primary side (no load)
Supply current primary side (max.)
14,4
–
–
–
–
10,9
3,5
4,7
1,5
15
80
–
15 / 0
5 / 0
11,7
3,7
15,6
–
290
–
V
mA
mA
V
V
V
V
V
V
Vi
Input signal voltage
SKHIxxA on/off
SKHI22B on/off
–
ViT+
ViT-
Input threshold voltage (High) SKHIxxA
SKHI22B
Input threshold voltage (Low) SKHIxxA
SKHI22B
12,5
3,9
6,5
2,0
Features
5,5
1,75
• CMOS compatible inputs
• Short circuit protection by VCE
monitoring and switch off
• Drive interlock top/bottom
• Isolation by transformers
• Supply undervoltage protection
(13 V)
Rin
Input resistance
SKHIxxA
SKHI22B
–
–
10
3,3
–
–
kΩ
kΩ
VG(on)
VG(off)
Turn on gate voltage output
Turn off gate voltage output SKHI22x
SKHI21A
–
–
–
+15
-7
0
–
–
–
V
V
V
RGE
fASIC
td(on)IO
td(off)IO
td(err)
Internal gate-emitter resistance
–
–
0,85
0,85
–
–
3,3
0
22
8
1
1
0,6
9
–
–
1,15
1,15
–
kΩ
MHz
µs
µs
µs
µs
µs
µs
V
• Error latch/output
Asic system switching frequency
Input-output turn-on propagation time
Input-output turn-off propagation time
Error input-output propagation time
Typical Applications
• Driver for IGBT and MOSFET
modules in bridge circuits in
choppers, inverter drives, UPS
and welding inverters
tpERRRESET Error reset time
tTD
–
Top-Bot Interlock Dead Time SKHIxxA
SKHI22B
Reference voltage for VCE-monitoring
–
–
4,3
4,3
10
10
VCEstat
–
–
5 2)
6 3)
• DC bus voltage up to 1200V
V
1) see fig. 6
Cps
Coupling capacitance primary secondary
–
12
–
pF
106 h
g
2) At RCE = 18 kΩ, CCE = 330pF
3) At RCE = 36 kΩ, CCE = 470pF,
RVCE = 1kΩ
MTBF
m
Mean Time Between Failure Ta = 40° C
weight
–
–
2,0
45
–
–
© by SEMIKRON
031127
1
SKHI 21 A, SKHI 22 A / B
External Components
Component
RCE
Function
Reference voltage for VCE-monitoring
Recommended Value
10kΩ < RCE < 100kΩ
10 ⋅ RCE(kΩ)
VCEstat(V) = ------------------------------------ – 1,4
10 + RCE(kΩ)
(1)
18kΩ for SKM XX 123 (1200V)
36kΩ for SKM XX 173 (1700V)
with RVCE = 1kΩ (1700V IGBT):
10 ⋅ RCE(kΩ)
VCEstat(V) = ------------------------------------ – 1,8
10 + RCE(kΩ)
(1.1)
CCE
CCE < 2,7nF
Inhibit time for VCE - monitoring
15 – VCEstat(V)
10 – VCEstat(V)
0,33nF for SKM XX 123 (1200V)
0,47nF for SKM XX 173 (1700V)
----------------------------------------
tmin = τCE ⋅ ln
(2)
(3)
0,5µs < tmin < 10µs
10 ⋅ RCE(kΩ)
10 + RCE(kΩ)
------------------------------------
τCE(µs) = CCE(nF) ⋅
RVCE
Collector series resistance for 1700V IGBT- 1kΩ / 0,4W
operation
RERROR
Pull-up resistance at error output
UPull – Up
1kΩ < RERROR < 10kΩ
-----------------------
< 15mA
RERROR
RGON
Turn-on speed of the IGBT 4)
Turn-off speed of the IGBT 5)
RGON > 3Ω
RGOFF > 3Ω
RGOFF
4) Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.
5) Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation
2
031127
© by SEMIKRON
SKHI 21 A, SKHI 22 A / B
PIN array
Fig. 2 shows the pin arrays. The input side (primary side) comprises 10 inputs (SKHI 22A / 21A 8 inputs), forming the
interface to the control circuit (see fig.1).
The output side (secondary side) of the hybrid driver shows two symmetrical groups of pins with 4 outputs, each forming
the interface to the power module. All pins are designed for a grid of 2,54 mm.
Primary side PIN array
PIN No. Designation Explanation
P14
P13
P12
GND / 0V
VS
related earth connection for input signals
+ 15V 4% voltage supply
switching signal input 1 (TOP switch)
VIN1
positive 5V logic (for SKHI22A /21A, 15V logic)
P11
P10
free
not wired
/ERROR
error output, low = error; open collector output; max 30V / 15mA
(for SKHI22A /21A, internal 10kΩ pull-up resistor versus VS)
P9
P8
TDT2
VIN2
signal input for digital adjustment of interlocking time;
SKHI22B: to be switched by bridge to GND (see fig. 3)
SKHI22A /21A: to be switched by bridge to VS
switching signal input 2 (BOTTOM switch);
positive 5V logic (for SKHI22A /21A, 15V logic)
P7
P6
GND / 0V
SELECT
related earth connection for input signals
signal input for neutralizing locking function;
to be switched by bridge to GND
P5
TDT1
signal input for digital adjustment of locking time;
to be switched by bridge to GND
ATTENTION: Inputs P6 and P5 are not existing for SKHI 22A/ 21A. The contactor tracks of the digital input signals P5/
P6/ P9 must not be longer than 20 mm to avoid interferences, if no bridges are connected.
Secondary side PIN array
PIN No. Designation Explanation
S20
S15
S14
S13
S12
S1
VCE1
CCE1
GON1
GOFF1
E1
collector output IGBT 1 (TOP switch)
reference voltage adjustment with RCE and CCE
gate 1 RON output
gate 1 ROFF output
emitter output IGBT 1 (TOP switch)
collector output IGBT 2 (BOTTOM switch)
reference voltage adjustment with RCE and CCE
gate 2 RON output
VCE2
CCE2
GON2
GOFF2
E2
S6
S7
S8
gate 2 ROFF output
S9
emitter output IGBT 2 (BOTTOM switch)
ATTENTION: The connector leads to the power module should be as short as possible.
© by SEMIKRON
031127
3
SKHI 21 A, SKHI 22 A / B
Fig. 1 Block diagram of SKHI 22 A / B / 21 A
4
031127
© by SEMIKRON
SKHI 21 A, SKHI 22 A / B
VCE
OUT1
CCE
GON
GND/0V
VS
IN1
GOFF
V
E
ERROR
TDT2
E
V
GOFF
IN2
GON
CCE
GND/0V
SELECT
TDT1
OUT2
VCE
55
±0.2
detail "A" on scale 10 : 1
0.25x0.5
50.8
±0.3
measured from pin-centre to pin-centre
A
18.25
15.75
S1
P5
P6
S6
S9
S12
S15
P13
P14
A
A
S20
Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A)
© by SEMIKRON
031127
5
SKHI 21 A, SKHI 22 A / B
SEMIDRIVER®
The driver is connected to a controlled + 15 V-supply
voltage. The input signal level is 0/15 V for the SKHI 22A/
21A and 0/5 V for the SKHI 22B.
SKHI 22A / 22B und SKHI 21A
In the following explanations the whole driver family will
be designated as SKHI 22B. If a special type is referred
to, the concerned driver version will explicitly be named.
Hybrid dual drivers
The driver generation SKHI 22A/B and SKHI 21A will
replace the hybrid drivers SKHI 21/22 and is suitable for
all available low and medium power range IGBT and
MOSFETs.
Technical explanations1
Description of the circuit block diagram and the
functions of the driver
The SKHI 22A (SKHI 21A) is a form-, fit- and mostly
function-compatible replacement to its predecessor, the
SKHI 22 (SKHI 21).
The block diagram (fig.1) shows the inputs of the driver
(primary side) on the left side and the outputs (secondary
side) on the right.
The SKHI 22B is recommended for any new
development. It has two additional signal pins on the
primary side with which further functions may be utilized.
The following functions are allocated to the primary
side:
The SKHI 22A and SKHI 22B are available with standard
isolation (isolation testing voltage 2500 VAC, 1min) as
well as with an increased isolation voltage (type "H4")
(isolation testing voltage 4000 VAC, 1min). The SKHI 21A
is only offered with standard isolation features.
Input-Schmitt-trigger, CMOS compatible, positive logic
(input high = IGBT on)
Interlock circuit and deadtime generation of the IGBT
If one IGBT is turned on, the other IGBT of a halfbridge
cannot be switched. Additionally, a digitally adjustable
interlocking time is generated by the driver (see fig. 3),
which has to be longer than the turn-off delay time of the
IGBT. This is to avoid that one IGBT is turned on before
the other one is not completely discharged. This protec-
tion-function may be neutralized by switching the select
input (pin6) (see fig. 3). fig. 3 documents possible
interlock-times. "High" value can be achieved with no
connection and connection to 5 V as well.
Differences SKHI 22-22A (SKHI 21-21A)
Compared to the old SKHI 22/21 the new driver
SKHI 22A / 21A is absolutely compatible with regards to
pins and mostly with regards to functions. It may be
equivalently used in existing PCBs.
The following points have to be considered when
exchanging the drivers:
• Leave out the two resistors RTD for interlocking
dead time adjustment at pin 11 and pin 9.
P6 ;
SELECT
P5 ;
TDT1
P9 ;
TDT2
interlock time
tTD /µs
• The interlocking time of the driver stages in
halfbridge applications is adjusted to 3,25 µs. It may
be increased up to 4,25 µs by applying a 15 V (VS)
supply voltage at Pin 9 (TDT2) (wire bridge)
open / 5V
open / 5V
open / 5V
open / 5V
GND
GND
GND
GND
open / 5V
GND
1,3
2,3
open / 5V
open / 5V
X
3,3
• The error reset time is typically 9µs.
• The input resistance is 10 kΩ.
open / 5V
X
4,3
no interlock
Fig. 3 SKHI 22B - Selection of interlock-times: „High“-
level can be achieved by no connection or
connecting to 5 V
As far as the SKHI 22A is concerned, the negative gate
voltage required for turn-off of the IGBT is no longer -15V,
but -7V.
Short pulse suppression
General description
The integrated short pulse suppression avoids very short
The new driver generation SKHI 22A/B, SKHI 21A switching pulses at the power semiconductor caused by
consists of a hybrid component which may directly be high-frequency interference pulses at the driver input
mounted to the PCB.
signals. Switching pulses shorter than 500 ns are
suppressed and not transmitted to the IGBT.
All devices necessary for driving, voltage supply, error
monitoring and potential separation are integrated in the Power supply monitoring (VS)
driver. In order to adapt the driver to the used power
module, only very few additional wiring may be
necessary.
A controlled 15 V-supply voltage is applied to the driver. If
it falls below 13 V, an error is monitored and the error
output signal switches to low level.
The forward voltage of the IGBT is detected by an
integrated short-circuit protection, which will turn off the
module when a certain threshold is exceeded.
1. The following descriptions apply to the use of the hybrid
driver for IGBTs as well as for power MOSFETs. For the
reason of shortness, only IGBTs will be mentioned in the
following. The designations "collector" and "emitter" will refer
to IGBTs, whereas for the MOSFETs "drain" and "source" are
to be read instead.
In case of short-circuit or too low supply voltage the
integrated error memory is set and an error signal is
generated.
6
031127
© by SEMIKRON
SKHI 21 A, SKHI 22 A / B
Error monitoring and error memory
IGBT is turned off. VCEstat is the steady-state value of
VCEref and is adjusted to the required maximum value for
each IGBT by an external resistor RCE to be connected
between the terminals CCE (S6/S15) and E (S9/S12). It
may not exceed 10 V. The time constant for the delay of
The error memory is set in case of under-voltage or short-
circuit of the IGBTs. In case of short-circuit, an error signal
is transmitted by the VCE-input via the pulse transformers
to the error memory. The error memory will lock all
switching pulses to the IGBTs and trigger the error output
(P10) of the driver. The error output consists of an open
collector transistor, which directs the signal to earth in
case of error. SEMIKRON recommends the user to
provide for a pull-up resistor directly connected to the
error evaluation board and to adapt the error level to the
desired signal voltage this way. The open collector
transistor may be connected to max. 30 V / 15 mA. If
several SKHI 22Bs are used in one device, the error
terminals may also be paralleled.
VCEref may be increased by an external capacitor CCE
,
which is connected in parallel to RCE. It controls the time
tmin which passes after turn-on of the IGBT before the
VCE-monitoring is activated. This makes possible any
adaptation to the switching behavior of any of the IGBTs.
After tmin has passed, the VCE-monitoring will be triggered
as soon as VCE > VCEref and will turn off the IGBT.
External components and possible adjust-
ments of the hybrid driver
ATTENTION: Only the SKHI 22A / 21A is equipped with
an internal pull-up resistor of 10 kΩ versus VS. The
SKHI 22B does not contain an internal pull-up resistor.
Fig. 1 shows the required external components for
adjustment and adaptation to the power module.
VCE - monitoring adjustment
The error memory may only be reset, if no error is pending
and both cycle signal inputs are set to low for > 9 µs at the
same time.
The external components RCE and CCE are applied for
adjusting the steady-state threshold and the short-circuit
monitoring dynamic. RCE and CCE are connected in
parallel to the terminals CCE (S15/ S6) and E (S12/ S9) .
Pulse transformer set
The transformer set consists of two pulse transformers
one is used bidirectional for turn-on and turn-off signals of
the IGBT and the error feedback between primary and
secondary side, the other one for the DC/DC-converter.
The DC/DC-converter serves as potential-separation and
power supply for the two secondary sides of the driver.
The isolation voltage for the "H4"-type is 4000 VAC and
2500 VAC for all other types.
8
7
6
1200V (min)
1200V (typ)
1200V (max)
1700V (min)
1700V (typ)
1700V (max)
5
4
3
2
1
0
The secondary side consists of two symmetrical
driver switches integrating the following compon-
ents:
10
20
30
RCE / kOhm
40
50
Supply voltage
Fig. 4 VCEstat in dependence of RCE (Tamb = 25°C)
The voltage supply consists of a rectifier, a capacitor, a
voltage controller for - 7 V and + 15 V and a + 10 V
reference voltage.
Dimensioning of RCE and CCE can be done in three steps:
Gate driver
1. Calculate the maximum forward voltage from the
datasheet of the used IGBT and determine VCEstat
The output transistors of the power drivers are
MOSFETs. The sources of the MOSFETs are separately
connected to external terminals in order to provide setting
of the turn-on and turn-off speed by the external resistors
RON and ROFF. Do not connect the terminals S7 with S8
and S13 with S14, respectively. The IGBT is turned on by
2. Calculate approximate value of RCE according to
equation (1) or (1.1) from VCEstat or determine RCE by
using fig.4.
3. Determine tmin and calculate CCE according to
equations (2) and (3).
the driver at + 15 V by RON and turned off at - 7 V by ROFF
.
RON and ROFF may not chosen below 3 Ω. In order to
ensure locking of the IGBT even when the driver supply
voltage is turned off, a 22 kΩ-resistor versus the emitter
Typical values are
for 1200 V IGBT: VCEstat = 5 V; tmin = 1,45 µs,
output (E) has been integrated at output GOFF
.
R
CE = 18 kΩ, CCE = 330 pF
for 1700 V IGBT: VCEstat = 6 V; tmin = 3 µs,
CE = 36 kΩ, CCE = 470 pF
Adaptation to 1700 V IGBT
VCE-monitoring
The VCE-monitoring controls the collector-emitter voltage
VCE of the IGBT during its on-state. VCE is internally
limited to 10 V. If the reference voltage VCEref is exceeded,
the IGBT will be switched off and an error is indicated.
R
The reference voltage VCEref may dynamically be adapted When using 1700 V IGBTs it is necessary to connect a
1
kΩ / 0,4 W adaptation resistor between the VCE
-
to the IGBTs switching behaviour. Immediately after turn-
on of the IGBT, a higher value is effective than in the
steady state. This value will, however, be reset, when the
terminal (S20/ S1) and the respective collector.
© by SEMIKRON
031127
7
SKHI 21 A, SKHI 22 A / B
Adaptation to error signal level
SEMIKRON recommends to start-up operation using the
values recommended by SEMIKRON and to optimize the
values gradually according to the IGBT switching
behaviour and overvoltage peaks within the specific
circuitry.
An open collector transistor is used as error terminal,
which, in case of error, leads the signal to earth. The
signal has to be adapted to the evaluation circuit's voltage
level by means of an externally connected pull-up
resistor. The maximum load applied to the transistor shall
be 30 V / 15 mA.
Driver performance and application limits
The drivers are designed for application with halfbridges
As for the SKHI 22A / 21A a 10 kΩ pull-up resistor versus and single modules with a maximum gate charge QGE
VS (P13) has already been integrated in the driver.
<
4
µC (see fig. 6).
IGBT switching speed adjustment
The charge necessary to switch the IGBT is mainly
depending on the IGBT's chip size, the DC-link voltage
and the gate voltage.
The IGBT switching speed may be adjusted by the
resistors RON and ROFF. By increasing RON the turn-on
speed will decrease. The reverse peak current of the free-
wheeling diode will diminish. SEMIKRON recommends to
adjust RON to a level that will keep the turn-on delay time
td(on) of the IGBT < 1 µs.
This correlation is also shown in the corresponding
module datasheet curves.
It should, however, be considered that the SKHI 22B is
turned on at + 15 V and turned off at - 7 V. Therefore, the
gate voltage will change by 22 V during every switching
procedure.
By increasing ROFF the turn-off speed of the IGBT will
decrease. The inductive peak overvoltage during turn-off
will diminish.
Unfortunately, most datasheets do not indicate negative
gate voltages. In order to determine the required charge,
the upper leg of the charge curve may be prolonged to
The minimum gate resistor value for ROFF and RON is 3 Ω.
Typical values for RON and ROFF recommended by
SEMIKRON are given in fig. 5
+
22 V for determination of approximate charge per
switch.
RGon RGoff
CCE
pF
RCE
kΩ
RVCE
kΩ
SK-IGBT-Modul
The medium output current of the driver is determined by
the switching frequency and the gate charge. For the
SKHI 22B the maximum medium output current is
Ω
22
22
15
12
12
10
8,2
6,8
Ω
22
22
15
12
12
10
8,2
6,8
SKM 50GB123D
SKM 75GB123D
SKM 100GB123D
SKM 145GB123D
SKM 150GB123D
SKM 200GB123D
SKM 300GB123D
SKM 400GA123D
330
330
330
330
330
330
330
330
18
18
18
18
18
18
18
18
0
0
0
0
0
0
0
0
IoutAVmax
<
40 mA.
The maximum switching frequency fMAX may be
calculated with the following formula, the maximum value
however being 50 kHz due to switching reasons:
4 ⋅ 104
fMAX(kHz) = ------------------------
QGE(nC)
Fig. 6 shows the maximum rating for the output charge
per pulse for different gate resistors.
SKM 75GB173D
SKM 100GB173D
SKM 150GB173D
SKM 200GB173D
15
12
10
8,2
15
12
10
8,2
470
470
470
470
36
36
36
36
1
1
1
1
SKHI 22 A/B maximum rating for output charge per
pulse
4,50
4,00
Fig. 5 Typical values for external components
3,50
Rg=24 OHM; 3,86µC
3,00
Interlocking time adjustment
Rg=18 OHM; 3,52µC
2,50
Rg=12 OHM; 3,07µC
Rg=6 OHM, 2,50µC
Rg=3 OHM, 2,18µC
Fig. 3 shows the possible interlocking times between
output1 and output2. Interlocking times are adjusted by
connecting the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) either to earth/ GND (P7 and P14)
according to the required function or by leaving them
open.
2,00
1,50
1,00
0,50
0,00
0
10
20
30
40
50
60
f / kHz
Fig. 6 Maximum rating for output charge per pulse
A typical interlocking time value is 3,25 µs (P9 = GND; P5
and P6 open). For SKHI 22A / 21A the terminals TDT1
(P5) and SELECT (P6) are not existing. The interlocking
time has been fixed to 3,25 µs and may only be increased
to 4,25 µs by connecting TDT2 (P9) to VS (P13).
Further application notes
The CMOS-inputs of the hybrid driver are extremely
sensitive to over-voltage. Voltages higher than VS
+
0,3 V or below – 0,3 V may destroy these inputs.
ATTENTION: If the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) are not connected, eventually connected
track on PC-board may not be longer than 20 mm in order
to avoid interferences.
Therefore, control signal over-voltages exceeding the
above values have to be avoided.
Please provide for static discharge protection during
handling. As long as the hybrid driver is not completely
8
031127
© by SEMIKRON
SKHI 21 A, SKHI 22 A / B
assembled, the input terminals have to be short-circuited.
Persons working with CMOS-devices have to wear a
grounded bracelet. Any synthetic floor coverings must not
be statically chargeable. Even during transportation the
input terminals have to be short-circuited using, for
example, conductive rubber. Worktables have to be
grounded. The same safety requirements apply to
MOSFET- and IGBT-modules!
The connecting leads between hybrid driver and the
power module should be as short as possible, the driver
leads should be twisted.
Any parasitic inductances within the DC-link have to be
minimized. Over-voltages may be absorbed by C- or
RCD-snubbers between the main terminals for PLUS and
MINUS of the power module.
When first operating
a
newly developed circuit,
SEMIKRON recommends to apply low collector voltage
and load current in the beginning and to increase these
values gradually, observing the turn-off behaviour of the
free-wheeling diode and the turn-off voltage spikes
generated accross the IGBT. An oscillographic control will
be necessary. In addition to that the case temperature of
the module has to be monitored. When the circuit works
correctly under rated operation conditions, short-circuit
testing may be done, starting again with low collector
voltage.
It is important to feed any errors back to the control circuit
and to switch off the device immediately in such events.
Repeated turn-on of the IGBT into a short circuit with a
high frequency may destroy the device.
Mechanical fixing on PCB:
In applications with mechanical vibrations (vehicles)2 do
not use a ty-rap for fixing the driver, but - after soldering
and testing - apply special glue. Recommended types:
CIBA GEIGY XP 5090 + 5091; PACTAN 5011; WACKER
A33 (ivory) or N199 (transparent), applied around the
case edge (forms a concave mould). The housing may
not be pressed on the PCB; do not twist the PCB with the
driver soldered on, otherwise the internal ceramics may
crack. The driver is not suitable for big PCBs.
SEMIKRON offers a printed circuit board (PCB) type
SKPC2006 compatible for mounting a SKHI 21A or
SKHI 22A. This PCB contains the necessary tracks to
connect the external capacitors CCE and resistors RCE
Ron, Roff (see fig. 1).
,
The PCB may directly be plugged to SEMITRANS 3-IGBT
modules and be fixed to the heatsink by 3 thread bolts.
Dimensions: L x W x H = 96 x 67 x 1,5 mm.
For further details please contact SEMIKRON.
2. tested acceleration (x; y; z-axis):10-100 Hz: 1,5 g;
shock: 5 g (TÜV according to LES-DB-BN 411002)
This technical information specifies devices but promises no characteristics. No warranty or guarantee expressed or implied is made
regarding delivery, performance or suitability.
© by SEMIKRON
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