SKIIP23AC12T3 [SEMIKRON]
Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-20;
| 型号： | SKIIP23AC12T3 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-20 栅 功率控制 晶体管 |
| 文件： | 总4页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MiniSKiiP 1200 V
I
/ I
C
Cop
1.2
Mini1207
Tj = 150 °C
GE = ≥ 15 V
V
1.0
0.8
0.6
0.4
0.2
0
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50
75
100
125
150
[°C]
T
h
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
I
/I
I
/I
Cpuls C
Mini1209
Csc CN
Mini1210
2,5
12
10
8
Tj = ≤ 150 °C
GE = ± 15 V
Tj = ≤ 150 °C
GE = ± 15 V
sc = ≤ 10 µs
ext < 25 nH
V
V
t
L
2
Note:
1,5
1
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
6
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0
2
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1000
1500
[V]
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[V]
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Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
B 16 – 4
Fig. 12 Forward characteristic of the input bridge diode
0698 © by SEMIKRON
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相关型号：
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