SKIIP39MLI07E3V1 [SEMIKRON]
Insulated Gate Bipolar Transistor,;
| 型号： | SKIIP39MLI07E3V1 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总5页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 39MLI07E3V1
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
IC
650
159
125
200
400
V
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 2 x ICnom
-20 ... 20
MiniSKiiP® 3
3-Level NPC Inverter
SKiiP 39MLI07E3V1
Features
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
tpsc
6
µs
°C
VCES ≤ 650 V
Tj
-40 ... 175
Inverse diode
Ts = 25 °C
Ts = 70 °C
IF
163
125
200
A
A
A
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
tp = 10 ms, sin 180°, Tj = 25 °C
400
1470
-40 ... 175
ꢀ 650V Trench IGBTs
°C
ꢀ Robust and soft diodes in CAL
technology
Clamping diode
ꢀ Highly reliable spring contacts for
electrical connections
Ts = 25 °C
Ts = 70 °C
IF
163
125
200
A
A
A
A
A
Tj = 175 °C
ꢀ UL recognised: File no. E63532
IFnom
IFRM
IFSM
Tj
Typical Applications*
ꢀ Uninterruptible power supplies (UPS)
ꢀ Solar inverters
IFRM = 2xIFnom
10 ms, sin 180°, Tj = 25 °C
400
1470
-40 ... 175
°C
Remarks
Module
It(RMS)
Tstg
ꢀ Case temperature limited to TC = 125°C
max.; TC = TS (valid for baseplateless
modules)
Tterminal = 80°C, 20A per spring
AC sinus 50 Hz, t = 1 min
200
-40 ... 125
2500
A
°C
V
Visol
ꢀ Product reliability results valid for
Tj≤150°C (recommended
Characteristics
T
op=-40…+150°C)
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 200 A
Tj = 25 °C
VCE(sat)
1.45
1.70
1.85
2.10
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
2.8
4.3
5.8
0.1
1
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
chiplevel
0.9
4.3
6
6.5
0.3
VGE = 15 V
chiplevel
VGE = VCE, IC = 3.2 mA
Tj = 25 °C
VGE(th)
ICES
5
VGE = 0 V
CE = 650 V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
12.34
0.77
0.37
1600
2
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
MLI
© by SEMIKRON
Rev. 0 – 02.04.2014
1
SKiiP 39MLI07E3V1
Characteristics
Symbol Conditions
T1 / T4
min.
typ.
max.
Unit
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
td(on)
tr
Eon
td(off)
tf
165
69
3.6
341
83
ns
ns
mJ
ns
ns
mJ
K/W
VCE = 300 V
C = 200 A
I
V
GE = +15/-15 V
R
R
G on = 2 Ω
G off = 2 Ω
di/dton = 3150 A/µs
di/dtoff = 2000 A/µs
Eoff
Rth(j-s)
8.9
0.5
MiniSKiiP® 3
3-Level NPC Inverter
SKiiP 39MLI07E3V1
Features
per IGBT
T2 / T3
td(on)
tr
Eon
td(off)
tf
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
152
70
1.8
324
89
ns
ns
mJ
ns
ns
mJ
K/W
VCE = 300 V
I
C = 200 A
V
GE = +15/-15 V
R
R
G on = 2 Ω
G off = 2 Ω
di/dton = 3120 A/µs
di/dtoff = 2000 A/µs
Eoff
Rth(j-s)
9.5
0.5
ꢀ 650V Trench IGBTs
Inverse diode
VF = VEC
ꢀ Robust and soft diodes in CAL
technology
IF = 200 A
Tj = 25 °C
1.4
1.4
1.8
1.8
V
V
V
GE = 0 V
Tj = 150 °C
ꢀ Highly reliable spring contacts for
electrical connections
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1
1.2
1
2.6
3.9
V
V
mΩ
mΩ
A
chiplevel
ꢀ UL recognised: File no. E63532
0.9
1.8
2.6
157
31
Typical Applications*
ꢀ Uninterruptible power supplies (UPS)
ꢀ Solar inverters
chiplevel
IF = 200 A
IRRM
Qrr
di/dtoff = 2700 A/µs
µC
Remarks
V
GE = -15 V
ꢀ Case temperature limited to TC = 125°C
max.; TC = TS (valid for baseplateless
modules)
Tj = 150 °C
Err
8.3
0.6
mJ
Rth(j-s)
per Diode
K/W
Clamping diode
VF = VEC
ꢀ Product reliability results valid for
Tj≤150°C (recommended
IF = 200 A
Tj = 25 °C
1.4
1.4
1.8
1.8
V
V
V
GE = 0 V
T
op=-40…+150°C)
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1
1.2
1
2.6
3.9
V
V
mΩ
mΩ
A
chiplevel
0.9
1.8
2.6
171
16
chiplevel
IF = 200 A
IRRM
Qrr
di/dtoff = 3100 A/µs
µC
V
GE = -15 V
Tj = 150 °C
Err
4
mJ
Rth(j-s)
per Diode
0.6
K/W
Module
Ms
w
to heat sink
weight
2
2.5
Nm
g
82
Temperature Sensor
R25
NTC, Tr = 25 °C 1)
5.0 ± 5%
kΩ
MLI
2
Rev. 0 – 02.04.2014
© by SEMIKRON
SKiiP 39MLI07E3V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 02.04.2014
3
SKiiP 39MLI07E3V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 10: CAL diode forward characteristic
Fig. 12: Typ. CAL diode recovery charge
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 11: Typ. CAL diode peak reverse recovery current
4
Rev. 0 – 02.04.2014
© by SEMIKRON
SKiiP 39MLI07E3V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 02.04.2014
5
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