SKIIP703GD121-3DUL [SEMIKRON]
Half Bridge Based Peripheral Driver, 3000A;
| 型号： | SKIIP703GD121-3DUL |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Half Bridge Based Peripheral Driver, 3000A |
| 文件： | 总1页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 703GD121-3DUW
I. Power section 1 * SKiiP703GB121CT per phase
Absolute maximum ratings
SKiiPPACK
SK integrated intelligent
Power PACK
Symbol Conditions 1)
Values
Units
IGBT and inverse diode
VCES
3rd Generation
6-pack
1200
900
± 20
V
V
V
A
A
A
A
A
VCC
VGES
IC
ICM
IF
Operating DC link voltage
SKiiP 703GD121-3DUW 3)
IGBT, Theat sink = 25 / 70 °C
IGBT, tp < 1 ms,Theat sink = 25°C
Diode, Theat sink = 25 / 70 °C
Diode, tp < 1 ms
700 / 525
1400
525 / 393,75
900
4320
93
-40...+150 (125)
3000
Target data
IFM
IFSM
housing S33
Diode, Tj = 150 °C, 10ms; sin
I2t (Diode) Diode, Tj = 150 °C, 10ms
Tj , (Tstg)
kA2s
°C
V
Visol
IC-package
AC, 1min.
Theat sink = 70°C, Tterm = 115 °C
4)
1 * 500
A
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
IGBT
V(BR)CES
gate driver without supply
V
mA
mA
V
mΩ
V
V
mJ
mJ
≥VCES
−
1,2
36
0,9
2,71
2,3
−
172
279
−
−
−
−
−
−
2
Features
• SKiiP technology inside
VGE = 0,
Tj = 25 °C
−
−
−
−
−
−
ICES
VCE = VCES
Tj = 125 °C
7)
pressure contact of ceramic
to heat sink; low thermal
impedance
-
VCEO
rT
Tj = 125 °C
Tj = 125 °C
IC = 490A,
IC = 490A,
IC=490A,
7)
7)
VCEsat
Tj = 125 °C
Tj = 25 °C
VCC=600V
VCC=900V
7)
pressure contact of main
electric terminals
pressure contact of auxiliary
electric terminals
increased thermal cycling
capability
-
-
-
VCEsat
5)
Eon + Eoff
−
−
Tj = 125 °C
C
LCE
per SKiiP, AC side
top, bottom
1
10
nF
nH
−
−
−
−
RCC´-EE´
resistance, terminal-chip
0,40
mΩ
low stray inductance
homogenous current
distribution
-
-
Inverse diode 2)
VF = VEC IF= 450A;
VF= VEC
Eon + Eoff IF= 450A;
VTO
rT
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
1,8
−
18
1,0
1,83
V
V
mJ
V
−
−
−
−
−
−
2,5
−
−
−
IF= 450A;
• integrated current sensor
• integrated temperature sensor
• high power density
5)
Tj = 125 °C
Tj = 125 °C
mΩ
1)
Theatsink = 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast)
Thermal characteristics
2)
Rthjs
Rthjs
Rthsa
per IGBT
per diode
0,047
0,092
0,033
0,010
°C/W
°C/W
°C/W
°C/W
−
−
−
−
−
−
−
−
3)
L: P16 heat sink; 280 m3/ h
W: WK 40; 8l/min; 50% glycol
3)
D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard P16 for
forced air cooling
W mounted on standard water
cooler
Current sensor
Ip RMS
Ipmax RMS
1 * 400
1 * 500
A
A
Ta=100° C , Vsupply = ± 15V
t ≤ 2 s
V
supply ≥ ±14,25V, 0≤I≤ ± 700A,
Linearity
0,1
%
A
4)
per sensor
Tterm = temperature of terminal
with SKiiPPACK 3rd generation
5)
Ippeak
t ≤ 10 µs, per sensor
± 3000
gate driver
assembly instruction must be
followed
measured at chip level
Mechanical data
6)
M1
M2
M3
DC terminals, SI Units
AC terminals, SI Units
to heat sink 6)
4
8
−
6
10
−
Nm
Nm
Nm
−
−
3
7)
8)
external paralleling necessary
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
by SEMIKRON
000911
B 7 − 11
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