SKIIP942GB120-317CTVU [SEMIKRON]
Half Bridge Based Peripheral Driver, 1125A;
| 型号： | SKIIP942GB120-317CTVU |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Half Bridge Based Peripheral Driver, 1125A 驱动 接口集成电路 |
| 文件： | 总1页 (文件大小：15K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 942 GB 120 - 317 CTV
Absolute Maximum Ratings
SKiiPPACK
SK integrated intelligent
Power PACK
halfbridge
Symbol Conditions1)
Values
3000
Units
V
4)
Visol
AC, 1min
Top ,Tstg
Operating / stor. temperature
-25...+85
°C
SKiiP
942 GB 120 - 317 CTV 7,9)
IGBT and Inverse Diode
VCES
1200
900
900
V
V
A
°C
A
Preliminary Data
Case S3
5)
VCC
IC
Tj
Operating DC link voltage
IGBT
IGBT + Diode
Diode
3)
-40...+150
900
IF
IFM
IFSM
Diode, tp < 1 ms
Diode, Tj = 150 °C, 10ms; sin
1800
6480
210
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms
Driver
kAs2
VS1
VS2
fsmax
dV/dt
Stabilized Power Supply
Non-stabilized Power Supply
Switching frequency
18
30
20
75
V
V
kHz
kV/µs
Primary to secondary side
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
Features
IGBT11)
V(BR)CES
• Short circuit protection, due to
evaluation of current sensor
signals
Driver without supply
V
mA
mA
≥VCES
−
−
−
−
45
−
1,2
−
ICES
VGE = 0,
CE = VCES
Tj = 25 °C
Tj = 125 °C
V
• Isolated power supply
• Low thermal impedance
• Optimal thermal management
with integrated heatsink
• Pressure contact technology
with increased power cycling
capability, compact design
• Low stray inductance
• High power, small losses
• Over-temperature protection
VTO
rT
VCesat
VCesat
Tj = 125 °C
Tj = 125 °C
IC = 750A,
IC = 750A,
1,38
2,5
3,2
3,05
270/439
V
mΩ
V
V
mJ
−
−
−
−
−
−
−
−
−
−
Tj = 125 °C
Tj = 25 °C
Eon + Eoff VCC=600/900V,IC=900A
Tj = 125 °C
CCHC
LCE
per SkiiP, AC side
Top, Bottom
4,2
5
nF
nH
−
−
−
−
Inverse Diode 2)
1)
Theatsink = 25 °C, unless
VF = VEC IF= 750A;
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
2,43
2,55
36
V
V
mJ
V
−
−
−
−
−
−
−
−
0,91
1,3
otherwise specified
CAL = Controlled Axial Lifetime
VF= VEC
IF= 750A;
2)
Eon + Eoff IF= 900A;
Technology (soft and fast)
without driver
Driver input to DC link/ AC
3)
VTO
rT
Tj = 125 °C
Tj = 125 °C
−
−
4)
mΩ
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
AC connection busbars must be
Thermal Characteristics
10)
5)
Rthjs
Rthjs
Rthsa
per IGBT
per Diode
P16 heatsink; see case S3
0,030
0,083
0,036
°C/W
°C/W
°C/W
−
−
−
−
−
−
10)
6)
6,10)
7)
Driver
IS1
IS2
Supply current 15V-supply
Supply current 24V-supply
Interlock-time
260+500*fs /fsmax+1,3*IAC/A
200+370*fs /fsmax+1,0*IAC/A
2,3
mA
mA
µs
8)
tinterlock-driver
connected by the user; copper
busbars available on request
options available for driver:
U - DC link voltage sense
F – Fiber optic connector
“s” referenced to temperature
sensor
NPT-technology with homo-
genous current-distribution
SKiiPPACK protection
9)
ITRIPSC
ITRIPLG
TTRIP
Short circuit protection
A
A
°C
V
1125 ± 2%
-
Ground fault protection
Over-temp. protection
UDC-protection
115 ± 5%
920 ± 2%
10)
9)
UDCTRIP
11)
Mechanical Data
M1
DC terminals, SI Units
4
8
6
10
Nm
Nm
−
−
M2
AC terminals, SI Units
by SEMIKRON
16.07.99
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