SKIM300GD063D [SEMIKRON]
IGBT Modules; IGBT模块型号: | SKIM300GD063D |
厂家: | SEMIKRON INTERNATIONAL |
描述: | IGBT Modules |
文件: | 总4页 (文件大小:912K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SKiM 300GD063D
ꢃ = )8> ꢙ ꢔꢗ!ꢐꢎꢎ ꢍꢊꢋꢐꢒꢈꢉꢎꢐ ꢎꢌꢐꢕꢉꢖꢉꢐ,
Absolute Maximum Ratings
Symbol Conditions
ꢕ
Values
Units
IGBT
ꢘꢙꢚꢛ
#--
)7- 0/5-2
ꢘ
(
ꢅꢙ
ꢃꢎ = )8 0.-2 >ꢙ
ꢅꢙ@
ꢃꢎ = )8 0.-2 >ꢙ ꢊꢌ = / ꢑꢎ
75- 0+#-2
(
ꢘꢆꢚꢛ
ꢃB 0ꢃꢎꢊ"
ꢃꢕꢍꢌ
A )-
ꢘ
2
ꢄ 7- 666 C /8- 0/)82
>ꢙ
>ꢙ
ꢑꢓ$6 ꢕꢓꢎꢐ ꢍꢌꢐꢒꢓꢊꢉꢗ" ꢊꢐꢑꢌꢐꢒꢓꢊꢔꢒꢐ
(ꢙ / ꢑꢉꢗ6
ꢘꢉꢎꢍ!
)8--
ꢘ
®
Inverse diode
SKiM 4
ꢅD
ꢃꢎ = )8 0.-2 >ꢙ
)77 0/582
75- 0+#-2
(
(
ꢅD@ = ꢄ ꢅꢙ@
ꢃꢎ = )8 0.-2 >ꢙ ꢊꢌ = / ꢑꢎ
ꢊꢌ = /- ꢑꢎE ꢎꢉꢗ6E ꢃB = /8- >ꢙ
IGBT Modules
ꢅDꢛ@
)F--
(
ꢃ = )8 >ꢙ ꢔꢗ!ꢐꢎꢎ ꢍꢊꢋꢐꢒꢈꢉꢎꢐ ꢎꢌꢐꢕꢉꢖꢉꢐ,
Characteristics
Symbol Conditions
IGBT
ꢕ
SKiM 300GD063D
min.
typ.
max. Units
Preliminary Data
ꢘꢆꢚ0ꢊꢋ2
ꢘꢆꢚ = ꢘꢙꢚE ꢅꢙ = 5 ꢑ(
7 8
8 8
# 8
- +
ꢘ
ꢅꢙꢚꢛ
ꢘꢆꢚ = -E ꢘꢙꢚ = ꢘꢙꢚꢛ
E
ꢑ(
ꢃB = )8 >ꢙ
ꢃB = )8 >ꢙ
Features
ꢘꢙꢚ*
ꢒꢙꢚ
- F 0- 52
) F 0+ F2
ꢘ
ꢁꢂꢃꢄꢅꢆꢇꢃ ꢈꢉꢊꢋ ꢌꢍꢎꢉꢊꢉꢏꢐ
ꢃB = )8 02 >ꢙ
ꢑG
ꢀ
ꢊꢐꢑꢌꢐꢒꢓꢊꢔꢒꢐ ꢕꢍꢐꢖꢖꢉꢕꢉꢐꢗꢊ ꢍꢖ ꢘ
ꢘꢙꢚꢎꢓꢊ
ꢅꢙ = )-- (E ꢘꢆꢚ = /8 ꢘ
/ 8 0/ #2
/ .
)-
ꢘ
ꢙꢚꢎꢓꢊ
ꢛꢋꢍꢒꢊ ꢕꢉꢒꢕꢔꢉꢊ ꢎꢐ!ꢖ !ꢉꢑꢉꢊꢉꢗ" ꢊꢍ # $ ꢅ
ꢀ
ꢀ
ꢀ
ꢙ
ꢃB = )8 0/)82 >ꢙ ꢍꢗ ꢕꢋꢉꢌ !ꢐꢏꢐ!
%ꢇꢙ ꢎꢔ&ꢎꢊꢒꢓꢊꢐ ' (! *
)
+
ꢙꢉꢐꢎ
ꢙꢍꢐꢎ
ꢙꢒꢐꢎ
Hꢙꢚ
ꢘꢆꢚ = -E ꢘꢙꢚ = )8 ꢘE ꢖ = / @;<
ꢘꢆꢚ = -E ꢘꢙꢚ = )8 ꢘE ꢖ = / @;<
ꢘꢆꢚ = -E ꢘꢙꢚ = )8 ꢘE ꢖ = / @;<
)+
) 8
/ 8
ꢗD
ꢗD
ꢗD
ꢗ;
ꢙꢍꢒꢒꢐꢎꢌꢍꢗ,ꢎ ꢊꢍ ꢎꢊꢓꢗ,ꢓꢒ,ꢎ
ꢅꢚꢙ #-.)/ꢄ+ꢄ+ 0ꢋꢔꢑꢉ,ꢉꢊ12 ꢕ!ꢓꢎꢎ
+3.4ꢅꢚ+) ꢓꢗ, ꢅꢚꢙ #5ꢃ6/ 0ꢕ!ꢉꢑꢓꢊꢐ2
7-4/)848#
9ꢙꢙICꢚꢚI
ꢒꢐꢎꢉꢎꢊꢓꢗꢕꢐ ꢊꢐꢒꢑꢉꢗꢓ!ꢄꢕꢋꢉꢌ ꢃꢕ= )8 0/)82 >ꢙ
/ 8 0/ #2
ꢑG
ꢊ,0ꢍꢗ2
ꢊꢒ
ꢊ,0ꢍꢖꢖ2
ꢊꢖ
ꢘꢙꢙ = +-- ꢘ
ꢅꢙ = +-- (
/+-
.8
ꢗꢎ
ꢗꢎ
ꢗꢎ
ꢗꢎ
Typical Applications
9ꢐꢎꢍꢗꢓꢗꢊ ꢉꢗꢏꢐꢒꢊꢐꢒꢎ ꢔꢌ ꢊꢍ /-- :;<
ꢅꢗ,ꢔꢕꢊꢉꢏꢐ ꢋꢐꢓꢊꢉꢗ"
ꢀ
ꢀ
ꢀ
9ꢆꢍꢗ = 9ꢆꢍꢖꢖ = 5 G
ꢃB = /)8 >ꢙ
.--
8-
ꢚ!ꢐꢕꢊꢒꢍꢗꢉꢕ ꢈꢐ!,ꢐꢒꢎ ꢓꢊ ꢖ ꢔꢌ ꢊꢍ )-
ꢎꢈ
ꢚꢍꢗ 0ꢚꢍꢖꢖ
2
2
ꢘꢆꢚ A /8 ꢘ
/# 8 0/7 82
ꢑJ
ꢑJ
:;<
ꢚꢍꢗ 0ꢚꢍꢖꢖ
ꢈꢉꢊꢋ ꢛ3;ꢅ #E ꢃB = >ꢙ
ꢘꢙꢙ = ꢘE ꢅꢙ = (
Inverse diode
ꢘD = ꢘꢚꢙ
ꢅD = )-- (E ꢘꢆꢚ = - ꢘE
/ )8 0/ )2
/ 7
ꢘ
ꢃB = )8 0/)82 >ꢙ
ꢘꢃ*
ꢒꢃ
ꢃB = )8 0/)82 >ꢙ
0- 582
0/ #2
))8
0- F2
ꢘ
ꢑK
(
ꢃB = )8 0/)82 >ꢙ
0) .82
ꢅ99@
Lꢒꢒ
ꢅD = +-- (E ꢃB = /)8 >ꢙ
ꢘꢆꢚ = - ꢘ ,ꢉ4,ꢊ = +.-- (4Mꢎ
+-
Mꢙ
ꢚꢒꢒ
9ꢆꢍꢗ = 9ꢆꢍꢖꢖ = 5 G
8
ꢑJ
Thermal characteristics
9ꢊꢋ0Bꢄꢎ2
ꢌꢐꢒ ꢅꢆꢇꢃ
- )
34N
34N
9ꢊꢋ0Bꢄꢎ2
ꢌꢐꢒ DN%
- )58
Temperature Sensor
9ꢃꢛ
ꢃ = )8 0/--2 >ꢙ
/ 0/ #.2
+ 0)2
:G
O
ꢊꢍ!ꢐꢒꢓꢗꢕꢐ
ꢃ = )8 0/--2 >ꢙ
Mechanical data
@
ꢊꢍ ꢋꢐꢓꢊꢎꢉꢗ: 0@82
)
7
+
8
ꢁꢑ
ꢁꢑ
/
@
ꢖꢍꢒ ꢊꢐꢒꢑꢉꢗꢓ!ꢎ 0@#2
)
ꢈ
+/-
"
GD
1
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 1 Output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Turn-on /-off energy = f (RG)
Fig. 6 Gate charge characteristic
Fig. 3 Turn-on /-off energy = f (IC)
Fig. 5 Transfer characteristic
2
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 7 Switching times vs. IC
Fig. 8 Switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zth(j-s) = f (tp); D = tp/tc = tp * f
Fig. 10 Transient thermal impedance of FWD
Zth(j-s) = f (tp); D = tp/tc = tp * f
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'
Fig. 12 CAL diode peak reverse recovery current
3
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 13 Typ. CAL diode recovered charge
Dimensions in mm
ꢆ%
ꢙꢓꢎꢐ %
ꢙꢓꢎꢐ %
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-03-2004 SCT
© by SEMIKRON
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