SKIM300GD063D [SEMIKRON]

IGBT Modules; IGBT模块
SKIM300GD063D
型号: SKIM300GD063D
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

IGBT Modules
IGBT模块

双极性晶体管
文件: 总4页 (文件大小:912K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKiM 300GD063D  
 = )8>  ꢔꢗ!ꢐꢎꢎ ꢍꢊꢋꢐꢒꢈꢉꢎꢐ ꢎꢌꢐꢕꢉꢖꢉꢐ,  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Units  
IGBT  
ꢙꢚꢛ  
#--  
)7- 0/5-2  
(
 
 = )8 0.-2 >ꢙ  
ꢙ@  
 = )8 0.-2 >ꢙ   = / ꢑꢎ  
75- 0+#-2  
(
ꢆꢚꢛ  
B 0ꢃꢎꢊ"  
ꢕꢍꢌ  
A )-  
2
 7- 666 C /8- 0/)82  
>ꢙ  
>ꢙ  
ꢑꢓ$6 ꢕꢓꢎꢐ ꢍꢌꢐꢒꢓꢊꢉꢗ" ꢊꢐꢑꢌꢐꢒꢓꢊꢔꢒꢐ  
(ꢙ  / ꢑꢉꢗ6  
ꢉꢎꢍ!  
)8--  
®
Inverse diode  
SKiM 4  
D  
 = )8 0.-2 >ꢙ  
)77 0/582  
75- 0+#-2  
(
(
D@ =  ꢙ@  
 = )8 0.-2 >ꢙ   = / ꢑꢎ  
 = /- ꢑꢎE ꢎꢉꢗ6E B = /8- >ꢙ  
IGBT Modules  
Dꢛ@  
)F--  
(
 = )8 >ꢙ  ꢔꢗ!ꢐꢎꢎ ꢍꢊꢋꢐꢒꢈꢉꢎꢐ ꢎꢌꢐꢕꢉꢖꢉꢐ,  
Characteristics  
Symbol Conditions  
IGBT  
SKiM 300GD063D  
min.  
typ.  
max. Units  
Preliminary Data  
ꢆꢚ0ꢊꢋ2  
ꢆꢚ = ꢙꢚE  = 5 ꢑ(  
7 8  
8 8  
# 8  
- +  
ꢙꢚꢛ  
ꢆꢚ = -E ꢙꢚ = ꢙꢚꢛ  
E
ꢑ(  
B = )8 >ꢙ  
B = )8 >ꢙ  
Features  
ꢙꢚ*  
ꢙꢚ  
- F 0- 52  
) F 0+ F2  
ꢁꢂꢃꢄꢅꢆꢇꢃ ꢈꢉꢊꢋ ꢌꢍꢎꢉꢊꢉꢏꢐ  
B = )8 02 >ꢙ  
ꢑG  
ꢊꢐꢑꢌꢐꢒꢓꢊꢔꢒꢐ ꢕꢍꢐꢖꢖꢉꢕꢉꢐꢗꢊ ꢍꢖ   
ꢙꢚꢎꢓꢊ  
 = )-- (E ꢆꢚ = /8   
/ 8 0/ #2  
/ .  
)-  
ꢙꢚꢎꢓꢊ  
ꢛꢋꢍꢒꢊ ꢕꢉꢒꢕꢔꢉꢊ  ꢎꢐ!ꢖ !ꢉꢑꢉꢊꢉꢗ" ꢊꢍ # $   
B = )8 0/)82 >ꢙ ꢍꢗ ꢕꢋꢉꢌ !ꢐꢏꢐ!  
%ꢇꢙ ꢎꢔ&ꢎꢊꢒꢓꢊꢐ ' (! *  
)
+
ꢉꢐꢎ  
ꢍꢐꢎ  
ꢒꢐꢎ  
Hꢙꢚ  
ꢆꢚ = -E ꢙꢚ = )8 ꢘE  = / @;<  
ꢆꢚ = -E ꢙꢚ = )8 ꢘE  = / @;<  
ꢆꢚ = -E ꢙꢚ = )8 ꢘE  = / @;<  
)+  
) 8  
/ 8  
ꢗD  
ꢗD  
ꢗD  
ꢗ;  
ꢙꢍꢒꢒꢐꢎꢌꢍꢗ,ꢎ ꢊꢍ ꢎꢊꢓꢗ,ꢓꢒ,ꢎ  
ꢅꢚꢙ #-.)/ꢄ+ꢄ+ 0ꢋꢔꢑꢉ,ꢉꢊ12 ꢕ!ꢓꢎꢎ  
+3.4ꢅꢚ+) ꢓꢗ, ꢅꢚꢙ #5ꢃ6/ 0ꢕ!ꢉꢑꢓꢊꢐ2  
7-4/)848#  
9ꢙꢙICꢚꢚI  
ꢒꢐꢎꢉꢎꢊꢓꢗꢕꢐ  ꢊꢐꢒꢑꢉꢗꢓ!ꢄꢕꢋꢉꢌ = )8 0/)82 >ꢙ  
/ 8 0/ #2  
ꢑG  
,0ꢍꢗ2  
 
,0ꢍꢖꢖ2  
 
ꢙꢙ = +--   
 = +-- (  
/+-  
.8  
ꢗꢎ  
ꢗꢎ  
ꢗꢎ  
ꢗꢎ  
Typical Applications  
9ꢐꢎꢍꢗꢓꢗꢊ ꢉꢗꢏꢐꢒꢊꢐꢒꢎ ꢔꢌ ꢊꢍ /-- :;<  
ꢅꢗ,ꢔꢕꢊꢉꢏꢐ ꢋꢐꢓꢊꢉꢗ"  
9ꢆꢍꢗ = 9ꢆꢍꢖꢖ = 5 G  
B = /)8 >ꢙ  
.--  
8-  
ꢚ!ꢐꢕꢊꢒꢍꢗꢉꢕ ꢈꢐ!,ꢐꢒꢎ ꢓꢊ  ꢔꢌ ꢊꢍ )-  
ꢎꢈ  
ꢍꢗ 0ꢚꢍꢖꢖ  
2
2
ꢆꢚ A /8   
/# 8 0/7 82  
ꢑJ  
ꢑJ  
:;<  
ꢍꢗ 0ꢚꢍꢖꢖ  
ꢈꢉꢊꢋ ꢛ3;ꢅ #E B = >ꢙ  
ꢙꢙ = ꢘE  = (  
Inverse diode  
D = ꢚꢙ  
D = )-- (E ꢆꢚ = - ꢘE  
/ )8 0/ )2  
/ 7  
B = )8 0/)82 >ꢙ  
ꢃ*  
 
B = )8 0/)82 >ꢙ  
0- 582  
0/ #2  
))8  
0- F2  
ꢑK  
(
B = )8 0/)82 >ꢙ  
0) .82  
99@  
Lꢒꢒ  
D = +-- (E B = /)8 >ꢙ  
ꢆꢚ = -  ,ꢉ4,ꢊ = +.-- (4Mꢎ  
+-  
Mꢙ  
ꢒꢒ  
9ꢆꢍꢗ = 9ꢆꢍꢖꢖ = 5 G  
8
ꢑJ  
Thermal characteristics  
9ꢊꢋ0Bꢄꢎ2  
ꢌꢐꢒ ꢅꢆꢇꢃ  
- )  
34N  
34N  
9ꢊꢋ0Bꢄꢎ2  
ꢌꢐꢒ DN%  
- )58  
Temperature Sensor  
9ꢃꢛ  
 = )8 0/--2 >ꢙ  
/ 0/ #.2  
+ 0)2  
:G  
O
ꢊꢍ!ꢐꢒꢓꢗꢕꢐ  
 = )8 0/--2 >ꢙ  
Mechanical data  
@
ꢊꢍ ꢋꢐꢓꢊꢎꢉꢗ: 0@82  
)
7
+
8
ꢁꢑ  
ꢁꢑ  
/
@
ꢖꢍꢒ ꢊꢐꢒꢑꢉꢗꢓ!ꢎ 0@#2  
)
+/-  
"
GD  
1
19-03-2004 SCT  
© by SEMIKRON  
SKiM 300GD063D  
Fig. 1 Output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Turn-on /-off energy = f (RG)  
Fig. 6 Gate charge characteristic  
Fig. 3 Turn-on /-off energy = f (IC)  
Fig. 5 Transfer characteristic  
2
19-03-2004 SCT  
© by SEMIKRON  
SKiM 300GD063D  
Fig. 7 Switching times vs. IC  
Fig. 8 Switching times vs. gate resistor RG  
Fig. 9 Transient thermal impedance of IGBT  
Zth(j-s) = f (tp); D = tp/tc = tp * f  
Fig. 10 Transient thermal impedance of FWD  
Zth(j-s) = f (tp); D = tp/tc = tp * f  
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'  
Fig. 12 CAL diode peak reverse recovery current  
3
19-03-2004 SCT  
© by SEMIKRON  
SKiM 300GD063D  
Fig. 13 Typ. CAL diode recovered charge  
Dimensions in mm  
ꢆ%  
ꢙꢓꢎꢐ %  
ꢙꢓꢎꢐ %  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee  
expressed or implied is made regarding delivery, performance or suitability.  
4
19-03-2004 SCT  
© by SEMIKRON  

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