SKKD100/18G6 [SEMIKRON]
Rectifier Diode, 1 Phase, 2 Element, 115A, 1800V V(RRM), Silicon, SEMIPACK-7;![SKKD100/18G6](http://pdffile.icpdf.com/pdf2/p00270/img/icpdf/SKKD100-18G6_1622553_icpdf.jpg)
型号: | SKKD100/18G6 |
厂家: | ![]() |
描述: | Rectifier Diode, 1 Phase, 2 Element, 115A, 1800V V(RRM), Silicon, SEMIPACK-7 局域网 二极管 |
文件: | 总4页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SKKD 100/18 G6
Absolute Maximum Ratings
Symbol Conditions
Recitifier Diode
Values
Unit
Tc = 85 °C
Tc = 100 °C
Tj = 25 °C
Tj = 130 °C
Tj = 25 °C
Tj = 130 °C
IFAV
115
86
A
A
sin. 180°
IFSM
2500
A
10 ms
2000
A
i2t
31250
20000
1900
A2s
A2s
V
10 ms
SEMIPACK® 1
VRSM
VRRM
Tj
1800
V
-40 ... 130
°C
Rectifier Diode Modules
SKKD 100/18 G6
Module
Tstg
-40 ... 125
3000
°C
V
1 min
1 s
Visol
a.c.; 50 Hz; r.m.s.
3600
V
Features
Characteristics
• Heat transfer through aluminium oxide
ceramic isolated metal baseplate
• UL recognized, file no. E63532
Symbol Conditions
Diode
min.
typ.
max.
Unit
Tj = 25 °C, IF = 300 A
Tj = 130 °C
VF
1.45
0.75
2.20
1.60
0.87
2.45
3
V
Typical Applications
• Non-controllable rectifiers for AC/AC
converters
• Line rectifiers for transistorized AC
motor controllers
• Field supply for DC motors
V(TO)
rT
V
Tj = 130 °C
mΩ
mA
K/W
K/W
K/W
K/W
IRD
Tj = 130 °C, VRD = VRRM
per chip
Rth(j-c)
0.23
0.115
0.25
0.125
cont.
per module
per chip
Rth(j-c)
sin. 180°
per module
Module
Rth(c-s)
chip
0.22
0.11
K/W
K/W
Nm
module
Ms
Mt
a
to heatsink M5
to terminals M5
4.25
2.55
5.75
3.45
Nm
5 * 9,81 m/s2
w
75
g
SKKD
© by SEMIKRON
Rev. 3 – 17.08.2009
1
SKKD 100/18 G6
Fig. 11R: Power dissipation per diode vs. ambient
temperature
Fig. 11L: Power dissipation per diode vs. forward current
Fig. 12L: Power dissipation of two modules vs. direct
current
Fig. 12R: Power dissipation of two modules vs. case
temperature
Fig. 13L: Power dissipation of three modules vs. direct
current
Fig. 13R: Power dissipation of three modules vs. case
temperature
2
Rev. 3 – 17.08.2009
© by SEMIKRON
SKKD 100/18 G6
Fig. 14: Transient thermal impedance vs. time
Fig. 15: Forward characteristics
Fig. 16: Surge overload current vs. time
© by SEMIKRON
Rev. 3 – 17.08.2009
3
SKKD 100/18 G6
SKKD
SEMIPACK 1
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
4
Rev. 3 – 17.08.2009
© by SEMIKRON
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