SKKD100/18G6 [SEMIKRON]

Rectifier Diode, 1 Phase, 2 Element, 115A, 1800V V(RRM), Silicon, SEMIPACK-7;
SKKD100/18G6
型号: SKKD100/18G6
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Rectifier Diode, 1 Phase, 2 Element, 115A, 1800V V(RRM), Silicon, SEMIPACK-7

局域网 二极管
文件: 总4页 (文件大小:273K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKKD 100/18 G6  
Absolute Maximum Ratings  
Symbol Conditions  
Recitifier Diode  
Values  
Unit  
Tc = 85 °C  
Tc = 100 °C  
Tj = 25 °C  
Tj = 130 °C  
Tj = 25 °C  
Tj = 130 °C  
IFAV  
115  
86  
A
A
sin. 180°  
IFSM  
2500  
A
10 ms  
2000  
A
i2t  
31250  
20000  
1900  
A2s  
A2s  
V
10 ms  
SEMIPACK® 1  
VRSM  
VRRM  
Tj  
1800  
V
-40 ... 130  
°C  
Rectifier Diode Modules  
SKKD 100/18 G6  
Module  
Tstg  
-40 ... 125  
3000  
°C  
V
1 min  
1 s  
Visol  
a.c.; 50 Hz; r.m.s.  
3600  
V
Features  
Characteristics  
• Heat transfer through aluminium oxide  
ceramic isolated metal baseplate  
• UL recognized, file no. E63532  
Symbol Conditions  
Diode  
min.  
typ.  
max.  
Unit  
Tj = 25 °C, IF = 300 A  
Tj = 130 °C  
VF  
1.45  
0.75  
2.20  
1.60  
0.87  
2.45  
3
V
Typical Applications  
• Non-controllable rectifiers for AC/AC  
converters  
• Line rectifiers for transistorized AC  
motor controllers  
• Field supply for DC motors  
V(TO)  
rT  
V
Tj = 130 °C  
m  
mA  
K/W  
K/W  
K/W  
K/W  
IRD  
Tj = 130 °C, VRD = VRRM  
per chip  
Rth(j-c)  
0.23  
0.115  
0.25  
0.125  
cont.  
per module  
per chip  
Rth(j-c)  
sin. 180°  
per module  
Module  
Rth(c-s)  
chip  
0.22  
0.11  
K/W  
K/W  
Nm  
module  
Ms  
Mt  
a
to heatsink M5  
to terminals M5  
4.25  
2.55  
5.75  
3.45  
Nm  
5 * 9,81 m/s2  
w
75  
g
SKKD  
© by SEMIKRON  
Rev. 3 – 17.08.2009  
1
SKKD 100/18 G6  
Fig. 11R: Power dissipation per diode vs. ambient  
temperature  
Fig. 11L: Power dissipation per diode vs. forward current  
Fig. 12L: Power dissipation of two modules vs. direct  
current  
Fig. 12R: Power dissipation of two modules vs. case  
temperature  
Fig. 13L: Power dissipation of three modules vs. direct  
current  
Fig. 13R: Power dissipation of three modules vs. case  
temperature  
2
Rev. 3 – 17.08.2009  
© by SEMIKRON  
SKKD 100/18 G6  
Fig. 14: Transient thermal impedance vs. time  
Fig. 15: Forward characteristics  
Fig. 16: Surge overload current vs. time  
© by SEMIKRON  
Rev. 3 – 17.08.2009  
3
SKKD 100/18 G6  
SKKD  
SEMIPACK 1  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied  
is made regarding delivery, performance or suitability.  
4
Rev. 3 – 17.08.2009  
© by SEMIKRON  

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