SKKT210/22EH4 [SEMIKRON]
Silicon Controlled Rectifier, 350A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 2 Element, CASE A 73A, SEMIPACK 3, 7 PIN;
| 型号： | SKKT210/22EH4 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Silicon Controlled Rectifier, 350A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 2 Element, CASE A 73A, SEMIPACK 3, 7 PIN 局域网 栅 栅极 |
| 文件： | 总4页 (文件大小：1555K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SKKT
SKKH
1
11-08-2003 NOS
© by SEMIKRON
SKKT 210, SKKH 210
Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 2L Power dissipation per module vs. rms current
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3R Power dissipation of two modules vs. case temp.
2
11-08-2003 NOS
© by SEMIKRON
SKKT 210, SKKH 210
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 5 Recovered charge vs. current decrease
Fig. 7 On-state characteristics
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 6 Transient thermal impedance vs. time
Fig. 8 Surge overload current vs. time
3
11-08-2003 NOS
© by SEMIKRON
SKKT 210, SKKH 210
Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
11-08-2003 NOS
© by SEMIKRON
相关型号：
SKKT213/08D
Silicon Controlled Rectifier, 370A I(T)RMS, 213000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, CASE A43, SEMIPACK 3, 7 PIN
SEMIKRON
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