SKKT460 [SEMIKRON]
Thyristor / Diode Modules; 可控硅/二极管模块
| 型号： | SKKT460 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Thyristor / Diode Modules |
| 文件： | 总4页 (文件大小：1287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE
-
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./0
-
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&+$- 2 6 4 $ )ꢇꢏꢆꢚ 7348 +ꢑ 2 3" 9%*
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##44
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Symbol Conditions
Values
Units
&
ꢇꢏꢆꢚ 7348 +ꢑ 2 3" )744* 9%8
6 4 )!!" *
$
+$-
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+
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'= 2 #" 9%8 74 ꢎꢇ
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'= 2 7!4 9%8 74 ꢎꢇ
®
SEMIPACK 5
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-
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Thyristor / Diode Modules
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SKKT 460
SKKH 460
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ꢄꢌꢅ
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Features
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ꢇꢏꢆꢚ 73498 ꢓꢂꢅ ꢄꢉꢕꢅꢏꢇꢄꢊꢅ < ꢓꢂꢅ ꢎꢊꢐꢋꢍꢂ
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ꢓꢂꢅ ꢄꢉꢕꢅꢏꢇꢄꢊꢅ < ꢓꢂꢅ ꢎꢊꢐꢋꢍꢂ
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Typical Applications
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ꢐꢅꢏ'ꢂꢇ
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ꢃꢚꢑꢚ "4 ꢁꢘ8 ꢅꢚꢎꢚꢇꢚ8 7 ꢇ < 7 ꢎꢏꢆꢚ ꢈꢊꢅ /;;ꢚꢚꢚꢁ6
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ꢃꢓꢓꢅꢊ5ꢚ
7644
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)ꢇꢄꢋꢐꢏꢊꢇꢙ ꢄꢉꢂꢃꢄꢂꢅꢇ*
ꢀ
%ꢃꢇꢂ
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$ 4ꢒ
$ ꢒ
1)
ꢇꢂꢂ ꢃꢇꢇꢂꢎꢒꢍꢕ ꢏꢆꢇꢄꢅꢋꢑꢄꢏꢊꢆꢇ
2)
ꢇꢑꢅꢂ,ꢇ ꢎꢋꢇꢄ ꢒꢂ ꢍꢋꢒꢅꢏꢑꢃꢄꢂꢐ
SKKT
SKKH
1
03-04-2009 MAJ
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1l Power dissipation per thyristor vs. on-state current
Fig. 2l Power dissipation per module vs. rms current
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 1r Power dissipation per thyristor vs. ambient temperature
Fig. 2R Power dissipation per modules vs. case temp.
Fig. 3R Power dissipation of two modules vs. case temp.
2
03-04-2009 MAJ
© by SEMIKRON
SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 6 Transient thermal impedance vs. time
Fig. 8 Surge overload current vs. time
Fig. 7 On-state characteristics
3
03-04-2009 MAJ
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
%ꢃꢇꢂ $ ꢒ
)/;;ꢁ*
%ꢃꢇꢂ $ 4ꢒ )/;;+*
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
03-04-2009 MAJ
© by SEMIKRON
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