SKKT57B08EG6 [SEMIKRON]
Silicon Controlled Rectifier, 86.35A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, SEMIPACK-7;
| 型号： | SKKT57B08EG6 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Silicon Controlled Rectifier, 86.35A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, SEMIPACK-7 局域网 栅 栅极 |
| 文件： | 总4页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKKT 57B08 E G6
Absolute Maximum Ratings
Symbol Conditions
Chip
Values
Unit
Tc = 85 °C
Tc = 100 °C
Tj = 25 °C
Tj = 130 °C
Tj = 25 °C
Tj = 130 °C
IT(AV)
55
41
A
A
sinus 180°
ITSM
1500
1200
11250
7200
900
A
10 ms
A
i2t
kA2s
kA2s
V
10 ms
i2t
SEMIPACK® 1
VRSM
VRRM
VDRM
800
V
800
V
Thyristor Modules
SKKT 57B08 E G6
Tj = 130 °C
Tj = 130 °C
(di/dt)cr
(dv/dt)cr
Tj
140
A/µs
V/µs
°C
1000
-40 ... 130
Module
Tstg
-40 ... 125
3000
°C
V
Features
• Heat transfer through aluminium oxide
ceramic isolated metal baseplate
1 min
1 s
Visol
a.c.; 50 Hz; r.m.s.
3600
V
• Hard soldered joints for high reliability
• UL recognized, file no. E63532
Characteristics
Symbol Conditions
Chip
min.
typ.
max.
Unit
Typical Applications
• DC motor control (e. g. for machine
tools)
• AC motor soft starters
• Temperature control (e. g. for ovens,
chemical processes)
• Professional light dimming (studios,
theaters)
Tj = 25 °C, IT = 180 A
VT
1.5
1.75
1
V
Tj = 130 °C
Tj = 130 °C
VT(TO)
rT
IDD;IRD
tgd
0.85
4.00
V
4.80
20
mΩ
mA
µs
Tj = 130 °C, VDD = VDRM; VRD = VRRM
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
VD = 0.67 * VDRM
1
tgr
2
µs
Tj = 130 °C
tq
170
150
300
µs
Tj = 25 °C
IH
250
600
mA
mA
V
Tj = 25 °C, RG = 33 Ω
Tj = 25 °C, d.c.
IL
VGT
IGT
2.5
Tj = 25 °C, d.c.
100
mA
V
Tj = 130 °C, d.c.
VGD
IGD
Rth(j-c)
0.25
4
Tj = 130 °C, d.c.
mA
K/W
K/W
K/W
K/W
K/W
K/W
per chip
0.470
0.235
0.490
0.245
0.510
0.255
cont.
per module
per chip
sin. 180°
Rth(j-c)
Rth(j-c)
per module
per chip
rec. 120°
per module
Module
Rth(c-s)
chip
0.22
0.11
K/W
K/W
Nm
module
Ms
Mt
a
to heatsink M5
to terminals M5
4.25
2.55
5.75
3.45
Nm
5 * 9,81 m/s2
w
75
g
SKKT
© by SEMIKRON
Rev. 0 – 19.01.2009
1
SKKT 57B08 E G6
Fig. 1L: Max. power dissipation per chip vs. on-state
current
Fig. 1R: Max. power dissipation per chip vs. ambient
temperature
Fig. 2L: Max. power dissipation of one module vs. rms
current
Fig. 2R: Max. power dissipation of one module vs. case
temperature
Fig. 3L: Max. power dissipation of two modules vs. direct
current
Fig. 3R: Max. power dissipation of two modules vs. case
temperature
2
Rev. 0 – 19.01.2009
© by SEMIKRON
SKKT 57B08 E G6
Fig. 4L: Max. power dissipation of three modules vs.
direct current
Fig. 4R: Max. power dissipation of three modules vs.
case temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 0 – 19.01.2009
3
SKKT 57B08 E G6
Fig. 9: Gate trigger characteristics
SKKT...B
SEMIPACK 1
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
4
Rev. 0 – 19.01.2009
© by SEMIKRON
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