SKM195GAL062D [SEMIKRON]
Insulated Gate Bipolar Transistor, 230A I(C), 600V V(BR)CES, N-Channel, CASE D61, 7 PIN;
| 型号： | SKM195GAL062D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 230A I(C), 600V V(BR)CES, N-Channel, CASE D61, 7 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMITRANS® M
PT-IGBT Modules
Absolute Maximum Ratings
Symbol Conditions 1)
VCES
Values
Units
V
V
A
A
600
600
230 / 195
460 / 390
± 20
SKM 195 GB 062 D
VCGR
IC
RGE = 20 kΩ
Tcase = 25/60 °C
SKM 195 GAL 062 D 6)
ICM
Tcase = 25/60 °C; tp = 1 ms
VGES
Ptot
V
per IGBT, Tcase = 25 °C
700
W
°C
V
Tj, (Tstg
Visol
)
–40 ... +150 (125)
2 500
AC, 1 min.
humidity DIN 40 040
Class F
40/125/56
climate
DIN IEC 68 T.1
Inverse Diode
IF = –IC
T
case = 25/80 °C
200 / 135
460 / 390
1 400
A
A
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM
I2t
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
A
SEMITRANS 2
9800
A2s
6)
Characteristics
Symbol Conditions 1)
min.
typ.
max.
Units
V(BR)CES VGE = 0, IC = 4 mA
≥ VCES
4,5
–
–
5,5
3
13
–
–
6,5
–
–
1
V
V
mA
mA
µA
V
VGE(th)
ICES
VGE = VCE, IC = 4 mA
VGE = 0 Tj = 25 °C
CE = VCES Tj = 125 °C
GAL
GB
V
–
–
–
IGES
VGE = 20 V, VCE = 0
Features
VCEsat
IC = 200 A VGE = 15 V;
2,1(2,2) 2,55(2,65)
• N channel, epitaxial Silicon
structure (PT- Punch-through
IGBT)
• High short circuit capability, self
limiting, if term. G is clamped to E
• Latch-up free, if clamped as
above
Tj = 25 (125) °C
VCE = 20 V, IC = 200 A
–
50
–
–
–
–
V
S
gfs
CCHC
Cies
Coes
Cres
LCE
per IGBT
–
–
–
–
–
–
11
1300
800
–
350
–
–
–
20
pF
nF
pF
pF
nH
VGE = 0
VCE = 25 V
f = 1 MHz
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (10 mm) and
creepage distances (20 mm)
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 300 V
–
–
–
–
–
–
200
150
600
140
11
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
VGE = –15 V / +15 V3)
IC = 200 A, ind. load
RGon = RGoff = 10 Ω
Tj = 125 °C
17
Inverse Diode and FWD of type “GAL” 8)
Typical Applications → B6 – 43
VF = VEC IF = 150 A VGE = 0 V;
VF = VEC IF = 200 A Tj = 25 (125) °C
–
–
–
–
–
–
1,45(1,35)
1,55(1,55)
1,7
1,9
0,9
5,5
–
V
V
V
mΩ
A
µC
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter drives
• UPS uninterruptable power
supplies
VTO
rt
IRRM
Qrr
Tj = 125 °C
Tj = 125 °C
–
4
70
9,4
IF = 200 A; Tj = 125 °C2)
IF = 200 A; Tj = 125 °C2)
–
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
–
–
–
–
–
–
0,18
0,3
0,05
°C/W
°C/W
°C/W
1)
T
= 25 °C, unless otherwise
case
specified
2) IF = – IC, VR = 300 V,
–diF/dt = 1000 A/µs, VGE = 0 V
3) Use VGEoff = – 5 ... – 15 V
6) The free-wheeling diode of
the GAL type have the data
of the inverse diodes of
SKM 195 GB 062 D
8) CAL = Controlled Axial Lifetime
Technology
Cases and mech. data → B6 – 44
© by SEMIKRON
0898
B 6 – 39
SKM 195 GB 062 D ...
M1 9 5G06 2.XLS-1
M1 95 G06 2.XLS-2
800
40
mWs
Tj = 125 °C
VCE = 600 V
VGE = + 15 V
W
E
E
off
on
700
Ω
RG = 10
600
500
400
300
200
100
30
20
10
E
P
tot
0
0
0
20
40
60
80 100 120 140 160
°C
0
100
200
300
400
500
T
C
A
I
C
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
M1 9 5G06 2.XLS-3
M1 95 G06 2.XLS-4
40
mWs
1000
A
Tj = 125 °C
CE = 600 V
VGE = + 15 V
IC = 200 A
1 pulse
TC = 25 °C
V
t =20µs
p
E
E
on
off
≤
Tj 150 °C
30
20
10
0
100
10
100µs
1ms
10ms
I
C
Not for
linear use
E
1
0
20
40
60
80
100
1
10
100
1000
10000
V
R
CE
V
G
Ω
Fig. 3 Turn-on /-off energy = f (RG)
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
M1 95 G06 2.XLS-5
M1 95 G06 2.XLS-6
2,5
2
12
≤
≤
Tj 150 °C
Tj 150 °C
V
GE = 15 V
V
GE = ± 15 V
Ω
≤
RGoff = 10
IC = 200 A
tsc 10 µs
L < 25 nH
IC = 200 A
10
8
di/dt= 200 A/µs
600 A/µs
1000 A/µs
2000 A/µs
1,5
1
6
allowed numbers of
4
short circuits: <1000
time between short
circuits: >1s
0,5
2
I
/I
C
Cpuls
I
/I
CSC C
0
0
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
700
V
V
CE
CE
V
V
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit IC = f (VCE)
B 6 – 40
0898
© by SEMIKRON
M1 95 G06 2.XLS-8
250
200
150
100
50
Tj = 150 °C
VGE 15V
A
≥
I
C
0
0
20
40
60
80 100 120 140 160
°C
T
C
Fig. 8 Rated current vs. temperature IC = f (TC)
M1 95 G06 2.XLS-9
M1 9 5G06 2.XLS-10
400
400
A
A
350
300
250
200
150
100
50
350
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
300
250
200
150
100
50
7V
7V
I
C
I
C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
V
CE
CE
V
V
Fig. 9 Typ. output characteristic, tp = 250 µs; 25 °C
Fig. 10 Typ. output characteristic, tp = 250 µs; 125 °C
M1 9 5G06 2.XLS-12
400
Pcond(t) = VCEsat(t) · IC(t)
A
350
300
250
200
150
100
50
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
VCE(TO)(Tj)
≤
1,3 – 0,003 (Tj –25) [V]
typ.: rCE(Tj) = 0,0041 + 0,000021 (Tj –25) [
Ω
]
max.: rCE(Tj) = 0,0064 + 0,000021 (Tj –25) [
+2
Ω
]
I
valid for VGE = + 15
[V]; IC > 0,3 ICnom
C
–1
0
0
2
4
6
8
10
12
14
V
V
GE
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, tp = 250 µs; VCE = 20 V
© by SEMIKRON
0898
B 6 – 41
SKM 195 GB 062 D ...
M1 95 G06 2.XLS-1 4
M1 9 5G06 2.XLS-13
100
nF
20
ICpuls = 200 A
VGE = 0 V
f = 1 MHz
V
18
16
100V
300V
C
ies
14
12
10
8
10
C
C
oes
1
6
res
4
C
2
V
GE
0,1
0
0
10
20
30
0
0,2 0,4 0,6
0,8
1
1,2 1,4 1,6
µC
V
CE
V
Q
Gate
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.VCE
M195 G062 .XLS-1 6
M1 9 5G06 2.XLS-15
10000
ns
1000
ns
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
IC = 200 A
t
doff
t
doff
Ω
Ω
RGon = 10
RGoff = 10
induct. load
1000
t
don
induct. load
t
t
don
r
t
t
f
100
t
f
100
r
t
t
10
10
0
20
40
60
80
100
0
100
200
300
400
500
R
Ω
G
I
C
A
Fig. 15 Typ. switching times vs. IC
Fig. 16 Typ. switching times vs. gate resistor RG
M195G062.XLS-17
M195G062.XLS-18
200
A
2,5
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
T=125°C, typ.
j
mJ
R =
G
2
T=25°C, typ.
j
5 Ω
150
10 Ω
1,5
1
24 Ω
43 Ω
75 Ω
100
T=125°C, max.
j
T=25°C, max.
j
50
0
0,5
E
offD
I
F
0
0
0,4
0,8
1,2
1,6
2
0
50
100
150
200
250
V
V
F
A
I
F
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 42
0898
© by SEMIKRON
M1 9 5G06 2.XLS-19
M1 95 G0 62 .XLS-2 0
1
1
K/W
K/W
0,1
0,1
0,01
0,01
D=0,50
0,20
0,10
0,05
0,02
D=0,5
0,2
0,1
0,05
0,02
0,01
0,001
0,0001
0,001
single pulse
0,01
single pulse
Z
thJC
Z
thJC
0,0001
0,00001
0,00001 0,0001 0,001
0,00001 0,0001 0,001
0,01
0,1
1
0,01
0,1
s
1
s
t
t
p
p
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M195G062.XLS-23
M195G062.XLS-22
120
120
100
80
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
IF = 200 A
R
=
G
A
A
5 Ω
R =
G
5 Ω
100
80
60
40
20
10 Ω
10 Ω
24 Ω
43 Ω
75 Ω
24 Ω
43 Ω
75 Ω
60
40
20
I
I
RR
RR
0
0
0
50
100
150
200
250
0
500
1000
1500
2000
A
I
F
di dt
/
F
A/µs
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
M1 9 5G06 2.XLS-24
14
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
µC
R =
G
IF=
5 Ω
Typical Applications
include
12
10
8
10 Ω
200 A
24 Ω
150 A
100 A
43 Ω
75 Ω
Switched mode power supplies
DC servo and robot drives
Inverters
75 A
50 A
6
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
4
2
Q
rr
0
0
500
1000
1500
2000
2500
A/µs
di /dt
F
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
0898
B 6 – 43
SKM 195 GB 062 D ...
SEMITRANS 2
Case D 61
UL Recognized
File no. E 63 532
SKM 195 GB 062 D
Dimensions in mm
Case outline and circuit diagram
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Mechanical Data
Symbol Conditions
Values
typ.
Units
min.
max.
M1
M2
to heatsink, SI Units(M6)
to heatsink, US Units
for terminals, SI Units(M5)
for terminals, US Units
3
27
2,5
22
–
–
–
–
–
–
–
5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s2
g
Eight devices are supplied in one
SEMIBOX A without mounting hard-
ware, which can be ordered separa-
tely under Ident No. 33321100 (for
10 SEMITRANS 2)
a
w
–
Larger packing units of 20 or 42 pie-
ces are used if suitable
Accessories
→
B 6 – 4
SEMIBOX
→
C - 1.
B 6 – 44
0898
© by SEMIKRON
相关型号：
SKM195GB062D
Insulated Gate Bipolar Transistor, 230A I(C), 600V V(BR)CES, N-Channel, CASE D61, 7 PIN
SEMIKRON
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