SKM400GAL176DL3 [SEMIKRON]
Insulated Gate Bipolar Transistor,;
| 型号： | SKM400GAL176DL3 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总5页 (文件大小：833K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400 GB 176 DL3
ꢋ
ꢏ 129ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ&
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
ꢔꢕꢖꢉ
ꢋ: ꢏ 12 9ꢕ
/4**
)2*
ꢔ
3
3
%
ꢋ: ꢏ /2* 9ꢕ
ꢋꢍ ꢏ 12 9ꢕ
ꢋꢍ ꢏ -* 9ꢕ
ꢕ
8/2
%
%
ꢕ<=ꢏ1$%ꢕꢆꢂꢃ
#**
? 1*
/*
3
ꢔ
ꢕ<=
ꢔ>ꢖꢉ
ꢑꢚꢈꢍ
TM
ꢔꢕꢕ ꢏ #** ꢔ@ ꢔ>ꢖ A 1* ꢔ@ ꢋ: ꢏ /12 9ꢕ
ꢔꢕꢖꢉ B /1** ꢔ
Cꢈ
SEMITRANS
9
Inverse Diode
Trench IGBT Modules
%
ꢋ: ꢏ /2* 9ꢕ
ꢋꢍ ꢏ 12 9ꢕ
ꢋꢍ ꢏ -* 9ꢕ
82*
18*
3
3
,
%
%
%
,<=ꢏ1$%,ꢆꢂꢃ
-**
3
3
,<=
SKM 400 GB 176 DL3
SKM 400 GAL 176 DL3
ꢑꢚ ꢏ /* ꢃꢈ@ ꢈꢊꢆ.
ꢋ: ꢏ /2* 9ꢕ
/)1*
,ꢉ=
Freewheeling Diode
%
ꢋ: ꢏ /2* 9ꢕ
ꢋꢍ ꢏ 12 9ꢕ
ꢋꢍ ꢏ -* 9ꢕ
)4*
8/4
3
3
,
Preliminary Data
%
%
#**
3
3
,<=
ꢑꢚ ꢏ /* ꢃꢈ@ ꢈꢊꢆ.
ꢋ: ꢏ /2* 9ꢕ
1#**
,ꢉ=
Features
Module
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
%
3
9ꢕ
9ꢕ
ꢔ
ꢑꢗ<=ꢉꢘ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢋꢛ:
5 )* ... D /2* ꢗ/12ꢘ
ꢀ
ꢀ
ꢀ
ꢀ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
/12
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
3ꢕ" / ꢃꢊꢆ.
E2**
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
ꢁꢇꢃꢊ&ꢊꢑꢓ ꢐꢍꢍꢂꢌ&ꢊꢆꢄ ꢑꢂ '%( )*
ꢋ
ꢏ 129ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ&
Characteristics
Symbol Conditions
IGBT
*)*+ ꢕꢒꢐꢈꢈ ,
ꢍꢐꢈꢅ
ꢕꢒꢊꢃꢐꢑꢅ ꢐꢍꢍꢂꢌ&ꢊꢆꢄ ꢑꢂ '%( %ꢖꢕ #-
ꢋ./+ )*0/12012#
min.
typ.
max. Units
ꢔ>ꢖꢗꢑꢎꢘ
ꢔ>ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ /1 ꢃ3
2"1
2"-
#")
ꢔ
ꢃ3
ꢃ3
ꢆ3
ꢆ3
ꢔ
Typical Applications
%
ꢔ>ꢖ ꢏ * ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢔꢕꢖ ꢏ * ꢔ" ꢔ>ꢖ ꢏ 1* ꢔ
ꢋ: ꢏ 12 9ꢕ
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ 12 9ꢕ
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ 12 9ꢕ
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ 129ꢕ
*"*/#)
ꢕꢖꢉ
3ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ &ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ 242 5 42* ꢔ 3ꢕ
6ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ.ꢘ
7ꢊꢆ& ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢀ
%
/1**
>ꢖꢉ
ꢔꢕꢖ*
/
*"E
8"8
2"1
1
Remarks
ꢔ
ꢋꢅꢌꢃꢊꢆꢐꢒꢈ /") 5 1"2 5 8"# ꢆꢅꢅ& ꢑꢂ
!ꢅ ꢍꢂꢆꢆꢅꢍꢑꢅ& ꢅ$ꢑꢅꢌꢆꢐꢒꢒꢓ
ꢀ
ꢌꢕꢖ
ꢔ>ꢖ ꢏ /2 ꢔ
)"1
#
ꢃF
ꢃF
ꢔ
ꢋ: ꢏ /129ꢕ
ꢔꢕꢖꢗꢈꢐꢑꢘ
%ꢕꢆꢂꢃ ꢏ 8** 3" ꢔ>ꢖ ꢏ /2 ꢔ ꢋ: ꢏ 129ꢕꢍꢎꢊꢚꢒꢅꢛ.
1")2
1"E
ꢋ: ꢏ /129ꢕꢍꢎꢊꢚꢒꢅꢛ.
1")2
ꢔ
ꢕꢊꢅꢈ
1#"1
/"/
ꢆ,
ꢆ,
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ 12" ꢔ>ꢖ ꢏ * ꢔ
ꢏ / =ꢁG
ꢕꢌꢅꢈ
H>
*"--
8***
2
ꢆ,
ꢆꢕ
I
*ꢔ@D1*ꢔ
<
ꢋ: ꢏ 12 9ꢕ
>ꢊꢆꢑ
ꢑ&ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ&ꢗꢂ ꢘ
E88
/2E
ꢆꢈ
ꢆꢈ
ꢃJ
ꢆꢈ
ꢆꢈ
<
>ꢂꢆ ꢏ ) F
&ꢊ0&ꢑ ꢏ 1/** 30Cꢈ
ꢏ ) F
ꢔꢕꢕ ꢏ /1**ꢔ
%ꢕꢏ 8**3
/)8
<
ꢋ: ꢏ /12 9ꢕ
/12*
/2*
>ꢂ
ꢑ
&ꢊ0&ꢑ ꢏ 1/** 30Cꢈ
GB
GAL
ꢖꢂ
/*-"E
ꢃJ
<
ꢚꢅꢌ %>Kꢋ
*"*E
L07
ꢑꢎꢗ:5ꢍꢘ
1
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ, ꢏ ꢔꢖꢕ
%,ꢆꢂꢃ ꢏ 8** 3@ ꢔ>ꢖ ꢏ * ꢔ
ꢋ: ꢏ 12 9ꢕꢍꢎꢊꢚꢒꢅꢛ.
ꢋ: ꢏ /12 9ꢕꢍꢎꢊꢚꢒꢅꢛ.
ꢋ: ꢏ 12 9ꢕ
/"-
1"/
/"1
*"E
/"4
8
/"E
1"2
/")
/"/
ꢔ
ꢔ
ꢔ,*
ꢔ
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ 12 9ꢕ
ꢔ
ꢌ,
ꢃF
ꢃF
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ /12 9ꢕ
TM
%
%, ꢏ 8** 3
/1*
)2
3
SEMITRANS
9
<<=
Hꢌꢌ
ꢖꢌꢌ
&ꢊ0&ꢑ ꢏ 1/** 30Cꢈ
Cꢕ
ꢔ>ꢖ ꢏ * ꢔ@ ꢔꢕꢕ ꢏ /1** ꢔ
11
ꢃJ
Trench IGBT Modules
<
ꢚꢅꢌ &ꢊꢂ&ꢅ
*"/)
L07
ꢑꢎꢗ:5ꢍꢘ'
Freewheeling Diode
ꢔ, ꢏ ꢔꢖꢕ
%,ꢆꢂꢃ ꢏ 8** 3@ ꢔ>ꢖ ꢏ * ꢔ
ꢋ: ꢏ 12 9ꢕꢍꢎꢊꢚꢒꢅꢛ.
ꢋ: ꢏ /12 9ꢕꢍꢎꢊꢚꢒꢅꢛ.
ꢋ: ꢏ 12 9ꢕ
/"4
/"-
/"/
*"E
1
/"E
1
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
SKM 400 GB 176 DL3
SKM 400 GAL 176 DL3
ꢔ,*
/"8
/"/
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ 12 9ꢕ
ꢌ,
Preliminary Data
ꢋ: ꢏ /12 9ꢕ
ꢋ: ꢏ /12 9ꢕ
8
%
%, ꢏ 3
3
<<=
Features
Hꢌꢌ
ꢖꢌꢌ
Cꢕ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢔ>ꢖ ꢏ * ꢔ@ ꢔꢕꢕ ꢏ /1** ꢔ
ꢃJ
ꢀ
ꢀ
<
ꢚꢅꢌ &ꢊꢂ&ꢅ
*"*E
L07
ꢃF
ꢃF
ꢑꢎꢗ:5ꢍꢘ,'
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢀ
ꢀ
ꢀ
ꢀ
ꢕꢖꢗꢈꢐꢑꢘ
<
ꢌꢅꢈ." ꢑꢅꢌꢃꢊꢆꢐꢒ5ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ 12 9ꢕ
ꢋꢍꢐꢈꢅꢏ /12 9ꢕ
*"82
*"2
ꢕꢕMDꢖꢖM
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
<
ꢚꢅꢌ ꢃꢂ&ꢇꢒꢅ
*"*8-
2
L07
(ꢃ
(ꢃ
ꢄ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢑꢎꢗꢍ5ꢈꢘ
ꢕ
ꢁꢇꢃꢊ&ꢊꢑꢓ ꢐꢍꢍꢂꢌ&ꢊꢆꢄ ꢑꢂ '%( )*
=
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆN =#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ =#
8
ꢈ
*)*+ ꢕꢒꢐꢈꢈ ,
=
1"2
2
ꢑ
ꢕꢒꢊꢃꢐꢑꢅ ꢐꢍꢍꢂꢌ&ꢊꢆꢄ ꢑꢂ '%( %ꢖꢕ #-
ꢋ./+ )*0/12012#
ꢙ
)#*
Typical Applications
3ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ &ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ 242 5 42* ꢔ 3ꢕ
6ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ.ꢘ
7ꢊꢆ& ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢋꢅꢌꢃꢊꢆꢐꢒꢈ /") 5 1"2 5 8"# ꢆꢅꢅ& ꢑꢂ
ꢀ
!ꢅ ꢍꢂꢆꢆꢅꢍꢑꢅ& ꢅ$ꢑꢅꢌꢆꢐꢒꢒꢓ
GB
GAL
2
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 11 CAL diode forward characteristic
4
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
ꢕꢐꢈꢅ ' #/
>K
ꢕꢐꢈꢅ ' #/
>3O
ꢕꢐꢈꢅ ' #/
5
11-09-2008 DIL
© by SEMIKRON
相关型号：
SKM400GB062D
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9
SEMIKRON
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